Bidirectional image-rejection active array with reduced LO requirement

1. A radio frequency (RF) frontend integrated circuit (IC) device, comprising:

one or more RF transceivers to transmit and receive RF signals within a first frequency band and RF signals within a second frequency band that is higher than the first frequency band;

a bidirectional local oscillator (LO) signal generation circuit coupled to the one or more transceivers to generate a bidirectional LO signal, wherein the bidirectional LO signal is injected between the first frequency band and the second frequency band, and wherein the bidirectional LO signal generation circuit is to perform a high-side LO injection for the RF signals within the first frequency band by injecting the bidirectional LO signal having an LO frequency higher than the first frequency band and to perform a low-side LO injection for the RF signals within the second frequency band by injecting the bidirectional LO signal having the LO frequency lower than the second frequency band;

a multi-channel transmit (TX)/receive (RX) power splitting/combing circuit coupled to the one or more RF transceivers;

a wideband in-phase and quadrature (I/Q) LO generation circuit coupled to the bidirectional LO signal generation circuit;

a TX up-conversion circuit coupled to the wideband I/Q LO generation circuit; and

a RX down-conversion circuit coupled to the wideband I/Q LO generation circuit.

2. The RF frontend IC device of claim 1 , wherein the bidirectional LO signal generation circuit includes a multiplier and an RF phased locked loop (PLL) circuit.

3. The RF frontend IC device of claim 2 , wherein the multiplier includes a tripler.

4. The RF frontend IC device of claim 2 , wherein the RF PLL circuit includes a phase-frequency detector (PFD), a charge pump, a loop filter, a voltage-controlled oscillator (VCO), and a programmable divider.

5. The RF frontend IC device of claim 2 , wherein the multiplier and the RF PLL circuit are the only one multiplier and only one RF PLL circuit for the high-side LO injection for the signals within the first frequency band and for the low-side LO injection for the signals within the second frequency band.

6. The RF frontend IC device of claim 1 , further comprising an intermediate frequency (IF) Double Pole Double Throw (DPDT) circuit coupled with the TX up-conversion circuit or the RX down-conversion circuit, wherein the DPDT circuit is configured for correct image rejection.

7. The RF frontend IC device of claim 6 , wherein the DPDT circuit operates at an IF frequency.

8. The RF frontend IC device of claim 6 , wherein the DPDT circuit has a through mode and a couple mode.

9. The RF frontend IC device of claim 8 , wherein the DPDT circuit keeps an I/Q polarity of signals in the through mode, and wherein the DPDT circuit changes the I/Q polarity of signals in the couple mode.

10. A method for communication by a radio frequency (RF) frontend integrated circuit (IC) device, comprising:

transmitting and receiving RF signals within a first frequency band and RF signals within a second frequency band;

injecting, by a bidirectional local oscillator (LO) signal generation circuit, a bidirectional LO signal between the first frequency band and the second frequency band, including performing a high-side LO injection for the RF signals within the first frequency band by injecting the bidirectional LO signal having an LO frequency higher than the first frequency band and performing a low-side LO injection for signals within the second frequency band by injecting the bidirectional LO signal having the LO frequency lower than the second frequency band;

generating wideband in-phase and quadrature (I/Q) LO RF signals, by a wideband I/Q LO signal generation circuit coupled to the bidirectional LO signal generation circuit;

up-converting the I/Q LO RF signals by a TX up-conversion circuit coupled to the wideband I/Q LO generation circuit; and

down-converting the I/Q LO RF signals by a RX down-conversion circuit coupled to the wideband I/Q LO generation circuit.

11. The method of claim 10 , wherein the bidirectional LO signal generation circuit includes a multiplier and an RF phased locked loop (PLL) circuit.

12. The method of claim 11 , wherein the multiplier includes a tripler.

13. The method of claim 11 , wherein the RF PLL circuit includes a phase-frequency detector (PFD), a charge pump, a loop filter, a voltage-controlled oscillator (VCO), and a programmable divider.

14. The method of claim 11 , wherein the multiplier and the RF PLL circuit are the only one multiplier and only one RF PLL circuit for the high-side LO injection for the RF signals within the first frequency band and for the low-side LO injection for the RF signals within the second frequency band.

15. The method of claim 10 , further comprising determining an image rejection by an Intermediate frequency (IF) Double Pole Double Throw (DPDT) circuit.

16. The method of claim 15 , further comprising operating the DPDT circuit at an IF frequency.

17. The method of claim 15 , further comprising operating the DPDT circuit at a through mode or a couple mode.

18. The method of claim 17 , further comprising operating the DPDT circuit at the through mode to keep an I/Q polarity of signals, or operating the DPDT circuit at the couple mode to change the I/Q polarity of signals.