Wide bandwidth time division duplex transceiver

1. A wide bandwidth time division duplex (TDD) transceiver comprising:

a transmitter;

a receiver;

a bandpass filter comprising a plurality of acoustic resonators including at least one shunt resonator and at least one series resonator; and

a transmit/receive switch configured to selectively connect a first port of the bandpass filter to either an output of the transmitter or an input of the receiver,

wherein each of the plurality of acoustic resonators is a transversely-excited film bulk acoustic resonator,

wherein each of the plurality of acoustic resonators comprises:

a piezoelectric layer, and

an interdigital transducer (IDT) with interleaved fingers on a surface of the piezoelectric laver, a thickness of the interleaved fingers of the IDT being greater than or equal to 0.85 times a thickness of the piezoelectric layer and less than or equal to 2.5 times the thickness of the piezoelectric layer.

2. A diplexer for a dual channel time division duplex (TDD) transceiver comprising:

a low band bandpass filter comprising a first port, a second port, and a first plurality of acoustic resonators; and

a high band bandpass filter comprising a first port, a second port, and a second plurality of acoustic resonators,

wherein each acoustic resonator of the first and second pluralities of acoustic resonators is a transversely-excited film bulk acoustic resonators, and

the second port of the low band bandpass filter and the second port of the high band bandpass filter are connected to a common port configured for connection to an antenna,

wherein each acoustic resonators comprises:

a piezoelectric layer, and

an interdigital transducer (IDT) with interleaved fingers on a surface of the piezoelectric layer, a thickness of the interleaved fingers of the IDT being greater than or equal to 0.85 times a thickness of the piezoelectric layer and less than or equal to 2.5 times the thickness of the piezoelectric layer.

3. The TDD transceiver of claim 1 , wherein, for each of the plurality of acoustic resonators, the piezoelectric layer and the IDT are configured such that a respective radio frequency signal applied to the IDT excites a respective primary shear acoustic mode in the piezoelectric layer.

4. The TDD transceiver of claim 1 , wherein the interleaved fingers of the IDT of each of the plurality of acoustic resonators are substantially aluminum.

5. The TDD transceiver of claim 4 , wherein:

the at least one shunt resonator further comprises a dielectric frequency setting layer having a thickness greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric layer, and

the thickness of the interleaved fingers of the IDTs of the at least one shunt resonator is greater than or equal to 0.875 times the thickness of the piezoelectric layer and less than or equal to 2.25 times the thickness of the piezoelectric layer.

6. The TDD transceiver of claim 1 wherein:

the interleaved fingers of the IDT of each of the plurality of acoustic resonators are substantially copper, and

the thickness of the interleaved fingers of the IDT of each of the plurality of acoustic resonators is within a first range of greater than or equal to 0.85 times the thickness of the piezoelectric layer and less than or equal to 1.42 times the thickness of the piezoelectric layer, or within a second range of greater than or equal to 1.95 times the thickness of the piezoelectric layer and less than or equal to 2.325 times the thickness of the piezoelectric layer.

7. The TDD transceiver of claim 6 , wherein:

the at least one shunt resonator further comprises a dielectric frequency setting layer having a thickness greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric layer, and

the thickness of the interleaved fingers of the IDTs of the at least one shunt resonator is within the first range of greater than or equal to 0.85 times the thickness of the piezoelectric layer and less than or equal to 1.42 times the thickness of the piezoelectric layer.

8. The TDD transceiver of claim 1 , wherein a second port of the bandpass filter is configured to connect to an antenna.

9. A wide bandwidth time division duplex (TDD) transceiver comprising:

a transmitter;

a receiver;

a bandpass filter; and

a transmit/receive switch configured to selectively connect a first port of the bandpass filter to either an output of the transmitter or an input of the receiver,

wherein the bandpass filter further comprises a plurality of acoustic resonators including one or more shunt resonators and one or more series resonators that each comprise:

a substrate;

a piezoelectric layer having front and back surfaces, the back surface attached to a surface of the substrate either directly or via one or more intermediate layers, portions of the piezoelectric layer forming one or more diaphragms spanning respective cavities in at least one of the substrate and the one or more intermediate layers; and

a conductor pattern on the piezoelectric layer and including an interdigital transducer (IDT) having interleaved fingers disposed on the diaphragm;

wherein the interleaved fingers of the IDT are substantially aluminum, and a thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric layer and less than or equal to 2.5 times the thickness of the piezoelectric plate.

10. The diplexer of claim 2 , wherein the piezoelectric layer and the IDT of each acoustic resonator of the first and second pluralities of acoustic resonators are configured such that a respective radio frequency signal applied to the IDT excites a respective primary shear acoustic mode in the piezoelectric layer.

11. The TDD transceiver of claim 9 wherein:

the at least one shunt resonator further comprises a dielectric frequency setting layer having a thickness greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric layer, and

the thickness of the interleaved fingers of the IDT of each of the plurality of acoustic resonators is greater than or equal to 0.875 times the thickness of the piezoelectric layer and less than or equal to 2.25 times the thickness of the piezoelectric layer.

12. The TDD transceiver of claim 9 , wherein:

the interleaved fingers of the IDT of each of the plurality of acoustic resonators are substantially copper, and

the thickness of the interleaved fingers of the IDT of each of the plurality of acoustic resonators is within a first range of greater than or equal to 0.85 times the thickness of the piezoelectric layer and less than or equal to 1.42 times the thickness of the piezoelectric layer, or with a second range of greater than or equal to 1.95 times the thickness of the piezoelectric layer and less than or equal to 2.325 times the thickness of the piezoelectric layer.

13. The TDD transceiver of claim 12 , wherein:

the at least one shunt resonator further comprises a dielectric frequency setting layer having a thickness greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric layer, and

the thickness of the interleaved fingers of the IDT of each of the plurality of acoustic resonators is with the first range of greater than or equal to 0.85 times the thickness of the piezoelectric layer and less than or equal to 1.42 times the thickness of the piezoelectric layer.

14. The TDD transceiver of claim 9 , wherein, for each of the plurality of acoustic resonators, the piezoelectric layer and the IDT are configured such that a respective radio frequency signal applied to the IDT excites a respective primary shear acoustic mode in the respective diaphragm.

15. The TDD transceiver of claim 9 , wherein a second port of the bandpass filter is configured to connect to an antenna.

16. The TDD transceiver of claim 9 , wherein each of the plurality of acoustic resonators is a transversely-excited film bulk acoustic resonator.