Two-dimensional perovskite compositions and devices therefrom
The present disclosure relates to a composition that includes a perovskite of A 2 BX 4 , where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R 1 includes a first carbon chain having between 2 and 5 carbon atoms, R 2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R 3 includes a third carbon chain.
1. A composition comprising:
a perovskite comprising A 2 BX 4 , wherein:
A comprises an R-form of a chiral molecule comprising at least one of
or an S-form of the chiral molecule,
B comprises a cation, and
X comprises an anion.
2. The composition of claim 1 , wherein the composition demonstrates spin-polarization of charge transport when a current is injected into the composition.
3. The composition of claim 1 , wherein B comprises at least one of lead, tin, or germanium.
4. The composition of claim 1 , wherein X comprises a halogen.
5. The composition of claim 1 , wherein the perovskite comprises at least one of R-A 2 PbI 4 , S-A 2 PbI 4 , R-A 2 SnI 4 , S-A 2 SnI 4 , R-A 2 Pb 1-x Sn x I 4 , S-A 2 Pb 1-x Sn x I 4 , wherein 0<x<1.
6. The composition of claim 1 , wherein:
the perovskite is in a form comprising a first two-dimensional (2D) network and a second 2D network,
the first 2D network comprises BX 4 ,
the second 2D network comprises BX 4 , and
a plurality of the chiral molecule forms a layer positioned between the first 2D network and the second 2D network.
7. The composition of claim 1 , wherein the perovskite is in a shape of a film having a thickness between about 10 nm and about 100 nm.
8. The composition of claim 7 , wherein the film has a roughness between about 1 nm and about 5 nm.
9. The composition of claim 1 , wherein the perovskite has a bandgap between about 2.2 eV and about 3.0 eV.
10. The composition of claim 1 , wherein the perovskite is capable of demonstrating chiral induced spin selectivity.
11. The composition of claim 8 , wherein the film of the perovskite is polycrystalline.
12. A device comprising:
a ferromagnetic (FM) electrode;
a non-FM electrode; and
a perovskite film comprising A 2 BX 4 , wherein:
the perovskite film is positioned between the FM electrode and the non-FM electrode,
A comprises an R-form of a chiral molecule comprising at least one of
or an S-form of the chiral molecule,
B comprises a cation, and
X comprises an anion.
13. The device of claim 12 configured to operate as at least one of an FM electrode, a spin filter, a spin polarized LED, a spin polarized laser, an op spin-valve, a spin-diode, a spin-transistor, a chiral-light detector, a switchable optical memory, a polarization selective optical multiplexor, or an ultrafast modulator.
14. The device of claim 12 , wherein the non-FM electrode comprises a transparent conducting oxide (TCO).
15. The device of claim 14 , wherein the TCO comprises indium tin oxide.
16. The device of claim 12 , wherein the FM electrode comprises nickel and iron.
17. The device of claim 16 , wherein the FM electrode has a thickness between about 1 nm and about 10 nm.
18. The device of claim 12 , further comprising:
a metal layer, wherein:
the FM electrode is positioned between the metal layer and the perovskite film.
19. The device of claim 18 , wherein the metal layer is a gold layer.
20. The device of claim 12 , wherein the perovskite film demonstrates spin-polarization of charge transport when a current is injected into the perovskite film.