Transversely-excited film bulk acoustic resonator with lateral etch stop
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity, a perimeter of the cavity defined by a lateral etch-stop comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
1. An acoustic resonator device comprising:
a substrate having a cavity and comprising a substrate material;
a lateral etch-stop that defines a perimeter of the cavity, the lateral etch-stop comprising a lateral etch-stop material different from the substrate material;
a single-crystal piezoelectric plate attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans the cavity; and
an interdigital transducer (IDT) at the piezoelectric plate such that interleaved fingers of the IDT are at the diaphragm,
wherein the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
2. The device of claim 1 , wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.
3. The device of claim 1 , further comprising a bonding layer between and in contact with respective surfaces of the piezoelectric plate and the substrate that face each other.
4. The device of claim 1 , wherein the lateral etch-stop material comprises one of silicon dioxide, silicon nitride, a metal oxide, a metal nitride, a glass, a ceramic, and a polymer material.
5. The device of claim 1 , wherein:
the lateral etch-stop comprises a material that is substantially impervious to an etch process that forms the cavity in the substrate.
6. The device of claim 1 , further comprising a vertical etch-stop that defines a depth of the cavity, the vertical etch-stop comprising a vertical etch-stop material different from the substrate material.
7. The device of claim 6 , wherein the vertical etch-stop material is one of silicon dioxide, silicon nitride, a metal oxide, a metal nitride a glass, a ceramic, and a polymer material.
8. The device of claim 6 , wherein:
the vertical etch-stop comprises a material that is substantially impervious to an etch process that forms the cavity in the substrate.
9. An acoustic filter device comprising:
a substrate having a plurality of cavities and comprising a substrate material;
a plurality of lateral etch-stops, each lateral etch-stop defining a perimeter of a respective cavity from the plurality of cavities, each lateral etch-stop comprising a lateral etch-stop material different from the substrate material;
a single-crystal piezoelectric plate attached to the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms, each diaphragm spanning a respective cavity from the plurality of cavities; and
a plurality of interdigital transducers (IDTs) of a plurality of resonators at the piezoelectric plate such that interleaved fingers of each IDT are at a respective diaphragm from the plurality of diaphragms,
wherein the piezoelectric plate and all of the plurality of IDTs are configured such that radio frequency signals applied to the plurality of IDTs excite primary shear acoustic modes in the respective diaphragms.
10. The device of claim 9 , wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.
11. The device of claim 9 , further comprising a bonding layer between and in contact with respective surfaces of the piezoelectric plate and the substrate that face each other.
12. The device of claim 9 , wherein the lateral etch-stop material comprises one of silicon dioxide, silicon nitride, silicon oxynitride, a metal oxide, a metal nitride a glass, a ceramic, and a polymer material.
13. The device of claim 9 , wherein
the lateral etch-stop comprises a material that is substantially impervious to an etch process that forms the cavity in the substrate.
14. The device of claim 9 , further comprising a vertical etch-stop that defines a depth of the plurality of cavities, the vertical etch-stop comprising a vertical etch-stop material different from the substrate material.
15. The device of claim 14 , wherein the vertical etch-stop material is one of silicon oxide, silicon nitride, silicon oxynitride, a metal oxide, a metal nitride a glass, a ceramic, and a polymer material.
16. The device of claim 14 , wherein
the vertical etch-stop comprises a material that is substantially impervious to an etch process that forms the cavity in the substrate.
17. The device of claim 9 ,
wherein the plurality of resonators includes one or more shunt resonators and one or more series resonators, and
wherein the device further comprises a dielectric layer over the respective IDTs of the one or more shunt resonators to shift a resonance frequency of the one or more shunt resonators relative to a resonance frequency of the one or more series resonators.
18. The device of claim 9 , further comprising an encapsulation/passivation layer deposited over all or a substantial portion of the device.