METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
Methods and apparatus for far edge trimming are provided herein. For example, an apparatus includes an integrated tool for processing a silicon substrate, comprising a vacuum substrate transfer chamber, an edge trimming apparatus coupled to the vacuum substrate transfer chamber and comprising a high pulse frequency laser and substrate support, wherein at least one of the high pulse frequency laser or the substrate support are movable with respect to each other and configured to trim about 2 mm to about 5 mm from a peripheral edge of a substrate when disposed on the substrate support, and a plasma etching apparatus coupled to the vacuum substrate transfer chamber and configured to etch silicon.
1 . An integrated tool for processing a silicon substrate, comprising:
a controller configured to control:
a vacuum substrate transfer chamber;
an edge trimming apparatus coupled to the vacuum substrate transfer chamber and comprising a high pulse frequency laser and substrate support, wherein at least one of the high pulse frequency laser or the substrate support are movable with respect to each other and configured to trim about 2 mm to about 5 mm from a peripheral edge of a substrate when disposed on the substrate support; and
a plasma etching apparatus coupled to the vacuum substrate transfer chamber and configured to etch silicon.
2 . The integrated tool of claim 1 , wherein the substrate support is rotatable and is an electrostatic chuck or a vacuum chuck.
3 . The integrated tool of claim 1 , wherein the high pulse frequency laser is movable along an x-axis, a y-axis, or a z-axis.
4 . The integrated tool of claim 1 , wherein the plasma etching apparatus is one of a plasma-based sputter etching apparatus or a plasma-based stripping apparatus.
5 . The integrated tool of claim 1 , wherein the controller is further configured to control:
an apparatus configured to apply a coating layer at least on the substrate; and
a removal apparatus configured to remove the coating layer from the substrate.
6 . The integrated tool of claim 5 , wherein the apparatus configured to deposit the coating layer is one of a physical vapor deposition apparatus, chemical vapor deposition apparatus, an atomic layer deposition apparatus, or a spin coating apparatus, and wherein the removal apparatus is a plasma-based sputter etching apparatus.
7 . The integrated tool of claim 5 , wherein the coating layer is formed from one of a photoresist coating, an etch mask, polyvinyl alcohol, polyvinyl pyrrolidone, polyethylene glycol with oxyethylene recurring units, polyethylene oxide, methylcellulose, ethylcellulose, hydroxypropyl cellulose, polyacrylic acid, polyvinyl alcohol-polyacrylic acid block copolymer, polyvinyl alcohol-polyacrylic acid ester block copolymer, or polyglycerin.
8 - 20 . (canceled)
21 . The integrated tool of claim 5 , wherein the coating layer is formed from an organic resin-based material.
22 . The integrated tool of claim 21 , wherein the organic resin-based material is solvent soluble.
23 . The integrated tool of claim 5 , wherein the coating layer is water soluble, and wherein the coating layer is removed using deionized water.
24 . The integrated tool of claim 5 , wherein the coating layer is deposited to a thickness of about 200 μm to about 2000 μm.
25 . The integrated tool of claim 1 , wherein the high pulse frequency laser is maintained in a fixed configuration as the substrate support is rotated in one of clockwise or counterclockwise direction during the edge trimming process.
26 . The integrated tool of claim 1 , wherein the high pulse frequency laser is moved along at least one of an x-axis, a y-axis, or a z-axis as the substrate support is rotated to perform the edge trimming process.
27 . The integrated tool of claim 1 , wherein the high pulse frequency laser is moved along at least one of an x-axis, a y-axis, or a z-axis as the substrate support is not rotated to perform the edge trimming process.
28 . The integrated tool of claim 1 , wherein the controller is further configured to control the integrated tool to process a substrate that is an end process substrate, with functional transistors FEOL, BEOL, and final passivation.
29 . The integrated tool of claim 1 , wherein the controller is further configured to control the integrated tool to process a substrate that comprises a bottom layer, which can be formed from at least one silicon, germanium, glass, or metal made from at least one of copper, stainless steel, or aluminum.
30 . The integrated tool of claim 29 , wherein stacking layers are disposed atop the bottom layer.
31 . The integrated tool of claim 30 , wherein the stacking layers comprise at least one of a plurality of integrated circuits or functional transistors.
32 . The integrated tool of claim 30 , wherein the stacking layers comprise a low-k dielectric layer.
33 . The integrated tool of claim 32 , wherein the low-k dielectric layer comprises at least one of an extreme low-k (ELM) dielectric material or ultralow-k (ULK) dielectric material.