Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition
Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., at less than 200° C. Specifically, these processes allow precise control of the morphology, composition, and/or size of the deposited structures. For example, a deposited structure may be doped, alloyed, or surface treated during its formation using a combination of different precursors. In particular, a silicon structure may be prelithiated while being formed. Different working electrodes (e.g., with different surface sizes and properties) allow forming different types of structures, e.g., precipitating particles from the solution or specific types of films deposited on the working electrode. These processes require minimal energy and do not use volatile precursors. Furthermore, these processes produce a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up.
1. A method of forming active material structures for electrochemical cells, the method comprising:
introducing an electroplating liquid solution into an electroplating bath, wherein:
the electroplating bath comprises a working electrode and a counter electrode submerged into the electroplating liquid solution, and
the electroplating liquid solution comprises a precursor comprising one or more elements selected from the group consisting of silicon (Si) and germanium (Ge) dissolved in the electroplating liquid solution and forming ions in the electroplating liquid solution;
applying an electrical potential between the working electrode and the counter electrode and through the electroplating liquid solution and thereby causing the ions to diffuse toward the working electrode and combining with electrons from the working electrode resulting in electrochemical reduction of the ions and formation of the active material structures in the electroplating bath thereby converting the electroplating liquid solution into a suspension, wherein:
the electrical potential is over −5V, based on a magnitude value, thereby causing the active material structures to precipitate from the precursor in the electroplating liquid solution away from the working electrode instead of depositing on the working electrode due to diffusion and electrode surface limitations,
the active material structures, forming the suspension after applying the electrical potential and precipitating from the precursor, are standalone structures formed entirely in the electroplating liquid solution using the precursor dissolved in the electroplating liquid solution, and
the active material structures comprise the one or more elements selected from the group consisting of silicon (Si) and germanium (Ge); and
collecting, from the suspension, the active material structures formed in the electroplating liquid solution as suspended particles and away from the working electrode.
2. The method of claim 1 , wherein the working electrode comprises an insulating mask disposed on a metal surface of the working electrode.
3. The method of claim 1 , wherein the precursor of the electroplating liquid solution is selected from the group consisting of trichlorosilane (SiHCl 3 ), silicon tetrachloride (SiCl 4 ), silicon tetrabromide (SiBr 4 ), silicon tetraiodide (SiI 4 ), and germanium halides.
4. The method of claim 1 , wherein:
the precursor of the electroplating liquid solution comprises trichlorosilane, and
the electroplating liquid solution further comprises at least one of lithium chloride and titanium tetrachloride.
5. The method of claim 1 , wherein the electroplating liquid solution further comprises at least one of propylene carbonate (PC), dimethyl carbonate (DMC), or an ionic liquid.
6. The method of claim 1 , wherein the electroplating liquid solution further comprises one or more of tetrabutylammonium chloride (Bu 4 NCl), tetrapropylammonium chloride (Py 4 NCl), tetraethylammonium chloride (Et 4 NCl), and lithium chloride (LiCl).
7. The method of claim 1 , wherein the electroplating liquid solution is maintained at a temperature of less than 200° C.
8. The method of claim 1 , wherein the electroplating liquid solution is maintained at a temperature between 15° C. and 25° C.
9. The method of claim 1 , wherein the active material structures comprise a combination of the silicon and lithium.
10. The method of claim 1 , wherein the electroplating bath further comprises a reference electrode, formed from one or more of glassy carbon (glassy-C), platinum (Pt), gold (Au), and silicon (Si).
11. The method of claim 1 , wherein each of the active material structures comprises a core and a shell, such that the shell has a different composition or structure from the core.
12. The method of claim 1 , wherein the working electrode is a platinum wire.
13. The method of claim 1 , wherein the electrical potential is at least −7V, based on the magnitude value.
14. The method of claim 1 , wherein the active material structures, precipitating in the electroplating liquid solution, are in a form of free-standing powder.
15. The method of claim 1 , wherein the active material structures, precipitating in the electroplating liquid solution, gravitationally settle at a bottom of the electroplating bath.
16. The method of claim 1 , wherein the active material structures are formed in the electroplating bath under diffusion and surface-limited conditions.
17. The method of claim 1 , wherein:
the precursor of the electroplating liquid solution comprises trichlorosilane, and
the electroplating liquid solution further comprises lithium chloride.
18. The method of claim 1 , wherein the electroplating liquid solution further comprises dimethyl carbonate (DMC).