Spiral transient voltage suppressor or Zener structure
A transient voltage suppressor is disclosed that includes an electrode, a substrate disposed on the electrode, the substrate having a first doping, an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping, a channel formed in the epitaxial layer having a width W, a length L and a plurality of curved regions, the channel forming a plurality of adjacent sections, the channel having a third doping that is different from the first doping and the second doping and a metal layer formed on top of the channel and contained within the width W of the channel.
1. A transient voltage suppressor, comprising:
an electrode;
a substrate disposed on the electrode, the substrate having a first doping;
an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping;
a continuous parallel channel formed in the epitaxial layer having a width W, a length L, a plurality of parallel regions, and a plurality of curved regions, the parallel channel having a plurality of adjacent sections to form a closed spiral loop, the parallel channel having a third doping that is different from the first doping and the second doping; and
a metal layer formed on top of the parallel channel and contained within the width W of the parallel channel.
2. The transient voltage suppressor of claim 1 wherein the first doping is an N++ doping.
3. The transient voltage suppressor of claim 1 wherein the second doping is an N+ doping.
4. The transient voltage suppressor of claim 1 wherein the third doping is a P+ doping.
5. The transient voltage suppressor of claim 1 wherein the parallel channel extends more than 360 degrees in a spiral starting from a center point.
6. The transient voltage suppressor of claim 1 wherein the parallel channel extends more than 180 degrees in a spiral starting from a center point.
7. The transient voltage suppressor of claim 1 wherein the parallel channel extends more than 90 degrees in a spiral starting from a center point.
8. The transient voltage suppressor of claim 1 wherein the parallel channel maintains a constant distance from edge to edge in adjacent sections.
9. A transient voltage suppressor, comprising:
an electrode;
a substrate disposed on the electrode, the substrate having a first doping;
an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping;
a parallel channel formed in the epitaxial layer having a width W, a length L, a plurality of parallel regions, and a plurality of curved regions, the parallel channel having a plurality of continuous adjacent sections to form a closed spiral loop, the parallel channel having a third doping that is different from the first doping and the second doping.
10. The transient voltage suppressor of claim 9 wherein the first doping is an N++ doping.
11. The transient voltage suppressor of claim 9 wherein the second doping is an N+ doping.
12. The transient voltage suppressor of claim 9 wherein the third doping is a P+ doping.
13. The transient voltage suppressor of claim 9 wherein the parallel channel extends more than 360 degrees in a spiral starting from a center point.
14. The transient voltage suppressor of claim 9 wherein the parallel channel extends more than 180 degrees in a spiral starting from a center point.
15. The transient voltage suppressor of claim 9 wherein the parallel channel extends more than 90 degrees in a spiral starting from a center point.
16. The transient voltage suppressor of claim 9 wherein the parallel channel maintains a constant distance from edge to edge in adjacent sections.
17. A transient voltage suppressor, comprising:
an electrode;
a substrate disposed on the electrode, the substrate having a first doping;
an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping;
a parallel channel formed in the epitaxial layer having a width W, a length L, a plurality of parallel regions, and a plurality of curved regions, the parallel channel having a first section and turning 180 degrees to form a second section that is adjacent to the first section to form a closed spiral loop, the parallel channel having a third doping that is different from the first doping and the second doping.
18. The transient voltage suppressor of claim 17 further comprising a metal layer formed on top of the parallel channel and contained within the width W of the parallel channel.