IP Library Granted Patent US 11,567,558
Granted Patent B2
US 11,567,558 · App. 17/111,877 · Granted Jan 31, 2023

Power supply control method

Inventor: Gerald Briat (Vif, FR)
Assignee: STMicroelectronics (Grenoble 2) SAS
G06F1/3275G06F1/3243G06F3/0625G06F3/0659G06F3/0679G11C16/30
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Quick Facts
Patent No.
US 11,567,558
App. No.
17/111,877
Granted
Jan 31, 2023
Kind
B2
Abstract

A memory chip includes at least two memory blocks. In a method for controlling power supply for the memory blocks of the memory chip, each memory block receives a command for switching to standby mode. The commands are issued, for example by a processor, separately for each memory block in order to be able to individually place the memory block in standby mode.

Claims (16)

1. A power supply control method for a memory chip including at least two memory blocks, comprising:

storing a mode command for each memory block in a non-volatile memory that is separate from the at least two memory blocks, wherein said mode command indicates whether the memory block is to be in one of a standby mode and an active mode; and

in response to an assertion of a reset signal:

passing of the mode command for each memory block from the non-volatile memory to each memory block; and

configuring the memory block after reset to be in the standby mode in response to the passed mode command having a first logic value and configuring the memory block after reset to be in the active mode in response to the passed mode command having a second logic value.

2. The method according to claim 1 , wherein the non-volatile memory comprises a register that is separate from the memory blocks.

3. The method according to claim 1 , wherein the memory chip includes exactly two memory blocks each corresponding to a different physical region inside the memory chip.

4. The method according to claim 1 , wherein each memory block of the memory chip is powered by a voltage equal to about 3.3 V.

5. The method according to claim 1 , wherein each memory block consumes, in standby mode, an electric current with an intensity equal to about 0.1 μA.

6. The method according to claim 5 , wherein each memory block consumes, in active mode, an electric current with an intensity about five hundred times greater than in standby mode.

7. The method according to claim 1 , wherein the memory chip is a flash memory chip.

8. The method according to claim 1 , wherein the reset signal is generated in response to reset of a processor.

9. The method according to claim 8 , wherein the memory chip and the processor are part of a microcontroller.

10. The method of claim 1 , wherein passing comprises logically combining the reset signal with the logic state of said mode command to generate a control signal for controlling configuration of the memory block in one of the standby mode and active mode.

11. A finite state machine configured to implement the method according to claim 1 .

12. A circuit comprising said memory chip and configured to implement the method according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2020
From: BRIAT, GERALD
To: STMICROELECTRONICS (GRENOBLE 2) SAS
Reel/Frame 054545/0541 →
Priority Claims (1)
FR 1913805 · Dec 5, 2019 · national
Continuity (1)
Related Publication 20210173469A1 · Jun 10, 2021