Aligned metallization for solar cells
Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.
1. A solar cell, comprising:
a semiconductor layer over a semiconductor substrate;
a first plurality of discrete openings in the semiconductor layer exposing corresponding discrete portions of the semiconductor substrate, wherein all adjacent openings of the first plurality of discrete openings have an overlap;
a plurality of doped regions in the semiconductor substrate corresponding to the first plurality of discrete openings;
an insulating layer over the semiconductor layer and in the first plurality of discrete openings;
a second plurality of discrete openings in the insulating layer exposing corresponding portions of the plurality of doped regions, each one of the second plurality of discrete openings entirely within a perimeter of a corresponding one of the first plurality of discrete openings and is entirely outside of a perimeter of both of the adjacent openings of the first plurality of discrete openings that overlap with the corresponding one of the first plurality of discrete openings; and
a plurality of conductive contacts in the second plurality of discrete openings and on the plurality of doped regions.
2. The solar cell of claim 1 , wherein each of the first plurality of discrete openings is approximately circular, and each of the second plurality of discrete openings is approximately circular.
3. The solar cell of claim 1 , wherein one or more of the second plurality of discrete openings is centered within a perimeter of a corresponding one or more of the first plurality of discrete openings.
4. The solar cell of claim 1 , wherein one or more of the second plurality of discrete openings is off-center within a perimeter of a corresponding one or more of the first plurality of discrete openings.
5. The solar cell of claim 1 , further comprising:
a third plurality of discrete openings in the insulating layer exposing corresponding discrete portions of the semiconductor layer; and
a second plurality of conductive contacts in the third plurality of discrete openings and on the corresponding discrete portions of the semiconductor layer.
6. The solar cell of claim 5 , wherein the plurality of conductive contacts is a first unidirectional row of conductive contacts, and the second plurality of conductive contacts is a second unidirectional row of conductive contacts parallel with the first unidirectional row of conductive contacts.
7. The solar cell of claim 1 , wherein the semiconductor layer is on a thin dielectric layer on the substrate, and the first plurality of discrete openings is further in the thin dielectric layer.
8. The solar cell of claim 1 , wherein the insulating layer is a doping source layer, the solar cell further comprising:
a second insulating layer between the semiconductor layer and the doping source layer, wherein the first plurality of discrete openings is further in the second insulating layer.
9. The solar cell of claim 8 , further comprising:
an anti-reflective coating layer over the doping source layer, wherein the second plurality of discrete openings is further in the anti-reflective coating layer.
10. The solar cell of claim 1 , wherein the semiconductor layer has a first conductivity type, and the plurality of doped regions has a second conductivity type opposite the first conductivity type.