Light sensor comprising a band-stop fano resonance filter over a photoconversion area

1. A light sensor, comprising:

a plurality of pixels;

wherein each pixel comprises a photoconversion area;

wherein said plurality of pixels includes a first pixel and a second pixel;

a first band-stop Fano resonance filter provided over said first pixel; and

wherein the second pixel comprises no Fano resonance filter.

2. The sensor according to claim 1 , wherein said first band-stop Fano resonance filter comprises a periodic structure defined in a first layer of a first dielectric material.

3. The sensor according to claim 2 , wherein said first band-stop Fano resonance filter comprises a first layer of a second dielectric material and a second layer of the second dielectric material, the first layer of the first dielectric material resting on the first layer of the second dielectric material and being covered with the second layer of the second dielectric material.

4. The sensor according to claim 3 , wherein the first dielectric material is selected from the group consisting of: amorphous carbon, amorphous silicon, silicon nitride, non-doped polysilicon, and silicon carbide, the second dielectric material comprises silicon oxide.

5. The sensor according to claim 3 , wherein the first layer of the first dielectric material is in contact with the first layer of the second dielectric material.

6. The sensor according to claim 3 , wherein the second layer of the first dielectric material is resting on top of and in contact with the first layer of the second dielectric material, and further comprising a third layer of a dielectric material resting on top of and in contact with the second layer of the first dielectric material, and wherein the first layer of the first dielectric material is resting on top of and in contact with said third layer.

7. The sensor according to claim 6 , wherein the dielectric material of the third layer comprises the second dielectric material.

8. The sensor according to claim 3 , wherein the first layer of the second dielectric material rests on a first antireflection coating.

9. The sensor according to claim 3 , wherein a second antireflection coating rests on the second layer of the second dielectric material.

10. The sensor according to claim 2 , wherein the periodic structure has a pitch smaller than a wavelength filtered by said first band-stop Fano resonance filter.

11. The sensor according to claim 2 , wherein said plurality of pixels further comprises a third pixel, and further comprising a second band-stop Fano resonance filter provided over said third pixel, wherein the second band-stop Fano resonance filter has a central frequency of a rejection band different from a central frequency of a rejection band of the first band-stop Fano resonance filter.

12. The sensor according to claim 11 , wherein the second band-stop Fano resonance filter comprises all the layers of the first band-stop Fano resonance filter and a periodic structure defined in the first layer of the first dielectric material.

13. The sensor according to claim 2 , wherein the periodic structure defined in the first layer of the first dielectric material comprises an array of pads.

14. The sensor according to claim 2 , wherein the periodic structure defined in the first layer of the first dielectric material comprises an arrangement of concentric rings.

15. The sensor according to claim 1 , further comprising a processing circuit configured to:

receive an output signal from each of the first and second pixels that is representative of the quantity of light received by the photoconversion area of the pixel during a pixel illumination phase; and

determine from the output signals of the first and second pixels information representative of the quantity of light received by the sensor during the illumination phase in a rejection band of the first band-stop Fano resonance filter.

16. The sensor according to claim 15 , wherein the processing circuit makes the determination by subtracting the output signal of the first pixel from the output signal of the second pixel.

17. The sensor according to claim 15 , wherein the processing circuit further operates to apply a correction factor to each of the output signals of the first and second pixels, wherein said correction factor accounts for differences in light transmission through a filtering structure which includes said first band-stop Fano resonance filter.

18. The sensor according to claim 16 , wherein the processing circuit further operates to apply a normalization to each of the output signals of the first and second pixels.

19. A manufacturing method, comprising the steps of:

a) forming a first layer of a first dielectric material resting on a first layer of a second dielectric material;

b) forming at least one band-stop Fano resonance filter by etching, across at least part of the thickness of the first layer of the first dielectric material, portions of the first layer of the first dielectric material to define therein a periodic structure of said at least one band-stop Fano resonance filter;

c) forming a second layer of the second dielectric material to cover the first layer of the first dielectric material; and

d) planarizing an exposed surface of the second layer of the second dielectric material by a chemical-mechanical polishing.

20. The method according to claim 19 , further comprising, before step a), forming a first antireflection coating wherein the first layer of the second dielectric material rests on the first antireflection coating.

21. The method according to claim 19 , further comprising, at step d), forming a second antireflection coating resting on the second layer of the second dielectric material.

22. The method according to claim 19 , wherein:

step a) further comprises forming of a second layer of the first dielectric material resting on the first layer of the second dielectric material, and then forming a dielectric etch stop layer resting on top of and in contact with the second layer of the first dielectric material; at step a), forming the first layer of the first dielectric material on top of and in contact with the etch stop layer; and

at step b), stopping etching the first layer of the first dielectric material on the etch stop layer.

23. The method according to claim 19 , wherein:

at step a), the first layer of the first dielectric material rests on a semiconductor substrate having photoconversion areas of pixels of a light sensor defined therein, said at least one band-stop Fano resonance filter defined in the first layer of the first dielectric material positioned over one pixel of the light sensor, and wherein another pixel of said light sensor comprises no Fano resonance filter defined in the first layer of the first dielectric material.

24. The method according to claim 19 , wherein:

after step d), a stack comprising the layers formed at the previous steps is transferred above a semiconductor substrate having photosensitive areas of pixels of a light sensor defined therein, so that said at least one band-stop Fano resonance filter defined in the first layer of the first dielectric material is positioned over one pixel of the light sensor, and another pixel of the light sensor comprises no Fano resonance filter defined in the first layer.