Methods to improve modulation efficiency in silicon optical modulator
A method for forming a silicon optical modulator with improved modulation efficiency. the method includes providing a silicon layer in a SOI substrate and forming a waveguide in the silicon layer with a rib structure respectively joining with a first slab region on one side and a second slab region on opposite side with corresponding slab thicknesses smaller than the rib structure. The method additionally includes forming multiple etched sections in each of the first slab region and the second slab regions with decreasing etching depths for sections further away from the rib structure. Furthermore, the method includes forming a PN junction in the rib structure with a moderate P/N doping level. Moreover, the method includes doping the multiple etched sections in the first/second slab region respectively with P-type/N-type impurity at increasing doping levels sequentially for sections further away from the rib structure.
1. An optical modulator comprising:
a substrate;
a first P region having a first p type doping level and a first N region having a first n type doping level forming a PN junction disposed in the substrate, each of the first P region and the first N region being L-shaped and including a first portion having a first cross-sectional dimension, and a second portion extending perpendicularly to the first portion and having a greater height than the first portion, the second portions being adjacent to each other, and the first portions being collinear and extending in opposite directions parallel to the substrate, wherein the second portion of the first P region further comprises an additional P region having a p type doping level less than the first p type doping level, and wherein the second portion of the first N region further comprises an additional N region having an n type doping level less than the first n type doping level;
two or more additional P regions disposed in the substrate, one of the two or more additional P regions abutting the first portion of the first P region, the two or more additional P regions having respective p type doping levels that are different from the first p type doping level of the first P region and having respective cross-sectional dimensions that are different from the first cross-sectional dimension of the first portion of the first P region; and
two or more additional N regions disposed in the substrate, one of the two or more additional N regions abutting the first portion of the first N region, the two or more additional N regions having respective n type doping levels that are different from the first n type doping level of the first N region and having respective cross-sectional dimensions that are different from the first cross-sectional dimension of the first portion of the first N region.
2. The optical modulator of claim 1 wherein:
the respective p type doping levels of the two or more additional P regions are greater than the first p type doping level of the first P region;
the respective cross-sectional dimensions of the two or more additional P regions are greater than the first cross-sectional dimension of the first portion of the first P region;
the respective n type doping levels of the two or more additional N regions are greater than the first n type doping level of the first N region; and
the respective cross-sectional dimensions of the two or more additional N regions are greater than the first cross-sectional dimension of the first portion of the first N region.
3. The optical modulator of claim 2 further comprising:
a second P region disposed in the substrate, wherein the two or more additional P regions lie between the second P region and the first portion of the first P region, the second P region having a second p type doping level that is greater than the respective p type doping levels of the two or more additional P regions; and
a second N region disposed in the substrate, wherein the two or more additional N regions lie between the second N region and the first portion of the first N region, the second N region having a second n type doping level that is greater than the respective n type doping levels of the two or more additional N regions.
4. The optical modulator of claim 3 wherein the respective p type doping levels and the respective cross-sectional dimensions of the two or more additional P regions increase from the first portion of the first P region to the second P region and wherein the respective n type doping levels and the respective cross-sectional dimensions of the two or more additional N regions increase from the first portion of the first N region to the second N region.
5. The optical modulator of claim 3 wherein respective electrical resistances of the two or more additional P regions decrease from the first P region to the second P region and wherein respective electrical resistances of the two or more additional N regions decrease from the first N region to the second N region.
6. The optical modulator of claim 3 wherein the cross-sectional dimension of one of the two or more additional the P regions abutting the second P region is equal to a cross-sectional dimension of the second P region, and wherein the cross-sectional dimension of one of the two or more additional the N regions abutting the second N region is equal to a cross-sectional dimension of the second N region.
7. The optical modulator of claim 3 wherein respective lengths of the two or more additional P regions decrease from the first P region to the second P region and wherein respective lengths of the two or more additional N regions decrease from the first N region to the second N region.
8. The optical modulator of claim 1 wherein each of the two or more additional P regions is of a different length than a corresponding one of the two or more additional N regions.
9. The optical modulator of claim 1 wherein each of the two or more additional P regions is of the same length than as a corresponding one of the two or more additional N regions.
10. The optical modulator of claim 3 wherein the PN junction is centered between the second P region and the second N region.
11. The optical modulator of claim 3 wherein the PN junction is closer to one of the second P region and the second N region.