Transversely-excited film bulk acoustic resonators with two-layer electrodes
Acoustic resonators and filter devices, and methods of making acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface with interleaved fingers of the IDT on the diaphragm. The plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The fingers include a first layer proximate the diaphragm, and a second layer over the first layer. The first and second layers are different metals. A transverse acoustic impedance of the second layer is higher than a transverse acoustic impedance of the first layer.
1. An acoustic resonator device comprising:
a substrate having a surface;
a piezoelectric layer attached to the surface of the substrate either directly or via one or more intermediate layers, the piezoelectric layer having a portion that forms a diaphragm over a cavity; and
an interdigital transducer on a surface of the piezoelectric layer and having interleaved fingers on the diaphragm and that is configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm,
wherein the interleaved fingers consist of a first layer that directly contacts the diaphragm, and a second layer on the first layer,
wherein the first and second layers are comprised of different metals, such that a transverse acoustic impedance of the second layer is higher than a transverse acoustic impedance of the first layer,
wherein the first layer has a thickness extending in a direction orthogonal to a surface of the diaphragm that is less than a thickness of the second layer extending in the direction orthogonal to the surface of the diaphragm.
2. The device of claim 1 , wherein a thickness of the first layer is less than one-half of an acoustic wavelength within the first layer at a resonance frequency.
3. The device of claim 1 , wherein a thickness of the second layer is less than one-half of an acoustic wavelength within the second layer at a resonance frequency.
4. The device of claim 1 , wherein a thickness of the first layer is in a range from 25% to 75% of a thickness of the diaphragm, and wherein a thickness of the second layer is in a range from 25% to 75% of a thickness of the diaphragm.
5. The device of claim 1 , wherein the first layer comprises aluminum or titanium.
6. The device of claim 5 , wherein the second layer comprises chromium or tungsten.
7. The device of claim 1 , wherein the second layer has a sidewall that tapers inward as the second layer extends away from the diaphragm at a range between approximately 70 and 80 degrees.
8. The device of claim 1 , wherein the shear primary acoustic mode is a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the diaphragm and transverse to a direction of an electric field created by the IDT.
9. A filter device comprising:
a plurality of bulk acoustic wave resonators that each comprise:
a substrate having a surface;
a piezoelectric layer attached to the surface of the substrate either directly or via one or more intermediate layers, the piezoelectric layer having a portion that forms a diaphragm over a cavity, and
a conductor pattern on a surface of the piezoelectric layer and including an interdigital transducer (IDT) having interleaved fingers on the respective diaphragm, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the respective diaphragm,
wherein the interleaved fingers of each bulk acoustic wave resonator consists of a first layer that directly contacts the respective diaphragm and a second layer on the first layer,
wherein the first and second layers of each IDT are comprised of different metals, such that a transverse acoustic impedance of the second layer is higher than a transverse acoustic impedance of the first layer, and
wherein each of the first layers has a thickness extending in a direction orthogonal to a surface of the diaphragm that is less than a thickness of the respective second layers extending in the direction orthogonal to the surface of the diaphragm.
10. The device of claim 9 , wherein, for each of the bulk acoustic wave resonators, a thickness of the first layer is less than one-half of an acoustic wavelength within the first layer at a resonance frequency.
11. The device of claim 9 , wherein, for each of the bulk acoustic wave resonators, a thickness of the second layer is less than one-half of an acoustic wavelength within the second layer at a resonance frequency.
12. The device of claim 9 , wherein, for each of the bulk acoustic wave resonators, a thickness of the first layer is in a range from 25% to 75% of a thickness of the diaphragm, and wherein a thickness of the second layer is in a range from 25% to 75% of a thickness of the diaphragm.
13. The device of claim 9 , wherein the first layer of each of the bulk acoustic wave resonators comprises aluminum or titanium.
14. The device of claim 13 , wherein the second layer of each of the bulk acoustic wave resonators, comprises chromium or tungsten.
15. The device of claim 9 , wherein the primary shear acoustic mode excited in each of the plurality of bulk acoustic wave resonators is a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the diaphragm and transverse to a direction of an electric field created by the IDT.
16. A method of fabricating an acoustic resonator device, comprising:
bonding a piezoelectric layer to a substrate either directly or via one or more intermediate layers;
forming a cavity, before or after bonding the piezoelectric layer to the substrate, such that a portion of the piezoelectric layer forms a diaphragm over the cavity; and
forming an interdigital transducer (IDT) on a surface of the piezoelectric layer, such that interleaved fingers of the IDT are on the diaphragm, the IDT configured to excite a primary shear acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT,
wherein the interleaved fingers consist of first layer that directly contacts the diaphragm, and a second layer on the first layer,
wherein the first and second layers are comprised of different metals, such that a transverse acoustic impedance of the second layer is higher than a transverse acoustic impedance of the first layer, and
wherein each of the first layers has a thickness extending in a direction orthogonal to a surface of the diaphragm that is less than a thickness of the respective second layers extending in the direction orthogonal to the surface of the diaphragm.
17. The method of claim 16 , further comprising forming a thickness of the first layer to be less than one-half of an acoustic wavelength within the first layer at a resonance frequency.
18. The method of claim 16 , further comprising forming a thickness of the second layer to be less than one-half of an acoustic wavelength within the second layer at a resonance frequency.
19. The method of claim 16 , further comprising forming a thickness of the first layer to be in a range from 25% to 75% of a thickness of the diaphragm, and a thickness of the second layer to be in a range from 25% to 75% of a thickness of the diaphragm.
20. The method of claim 16 , wherein the first layer comprises aluminum or titanium.
21. The method of claim 20 , wherein the second layer comprises chromium or tungsten.
22. The method of claim 16 , further comprising configuring the IDT to excite the primary shear acoustic mode as a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the diaphragm and transverse to a direction of an electric field created by the IDT.