Resonant LC tank package and method of manufacture
A package on a die having a low resistive substrate, wherein the package comprises an inductor on low-k dielectric and a capacitor on high-k dielectric. The stacked arrangement having different dielectric materials may provide an inductor having a high Q-factor while still having a high capacitance density. In addition, moving the inductor from the die to the package and fabricating the high density capacitor on the package reduces the silicon area required permitting smaller RF/analog blocks on the chip.
1. A device, comprising:
a die;
an inductor included in a first layer of dielectric material, the first layer of dielectric having a first dielectric constant;
a capacitor included in a second layer of dielectric, the second layer of dielectric material having a second dielectric constant different than the first dielectric constant, wherein the capacitor is positioned between the inductor and the die, and the capacitor includes:
a first plate;
a second plate; and
wherein the second dielectric material having the second dielectric constant is located in a gap between the first plate and the second plate;
a via electrically connecting the inductor with one or more of the first plate or the second plate; and
a dielectric spacer positioned between the die and the inductor, and the dielectric spacer is positioned between the die and the capacitor.
2. The device of claim 1 , wherein the first dielectric constant is about 1.5 to about 2.5.
3. The device of claim 2 , wherein the second dielectric constant is about 5 to about 15.
4. The device of claim 1 , wherein the inductor is electrically connected in series with the capacitor, or the inductor is electrically connected in parallel with the capacitor.
5. The device of claim 1 , wherein the dielectric spacer is a first dielectric spacer, and the device further comprises:
a second dielectric spacer located between the inductor and the capacitor.
6. The device of claim 5 , wherein one or more of the first dielectric spacer or the second dielectric spacer have a third dielectric constant of about 2 to about 5.
7. The device of claim 5 , wherein:
the first layer is located on a first side of the second layer; and
the device includes a third dielectric spacer located on a second side of the second layer.
8. The device of claim 1 , wherein:
the first layer is located on a first side of the second layer;
the dielectric spacer is a first dielectric spacer; and
the device includes a second dielectric spacer located on a second side of the second layer.
9. The device of claim 8 , wherein one or more of the first dielectric spacer or the second dielectric spacer have a third dielectric constant of about 2 to about 5.
10. A substrate configured to couple with a die, comprising:
a first layer including:
a first dielectric material having a first dielectric constant; and
an inductor;
a second layer including:
a second dielectric material having a second dielectric constant, wherein the second dielectric constant is different than the first dielectric constant;
a capacitor, including:
a first plate;
a second plate spaced from the first plate by a gap; and
wherein the second dielectric material is located in the gap between the first plate and the second plate;
a via in electrical communication with the inductor and one or more of the first plate or the second plate; and
a dielectric spacer configured to separate the inductor and the capacitor from the die, wherein the capacitor is within a footprint of the inductor and a footprint of the dielectric spacer.
11. The substrate of claim 10 , wherein the dielectric spacer is exposed on a surface of the substrate.
12. The substrate of claim 10 , wherein the first dielectric constant is about 1.5 to about 2.5.
13. The substrate of claim 12 , wherein the second dielectric constant is about 5 to about 15.
14. The substrate of claim 10 , wherein the second dielectric constant is about 5 to about 15.
15. The substrate of claim 10 , wherein the dielectric spacer has a third dielectric constant of about 2 to about 5.
16. The substrate of claim 10 , wherein the dielectric spacer is a first dielectric spacer, and the device further comprises:
a second dielectric spacer located between the inductor and the capacitor.
17. The substrate of claim 16 , wherein:
the first layer is located on a first side of the second layer; and
the device includes a third dielectric spacer located on a second side of the second layer.
18. The substrate of claim 10 , wherein:
the first layer is located on a first side of the second layer;
the dielectric spacer is a first dielectric spacer; and
the device includes a second dielectric spacer located on a second side of the second layer.
19. The substrate of claim 10 , further comprising a die coupled with the substrate.
20. An electronic device, comprising:
a die;
a package coupled with the die, the package including:
a first layer including:
a first dielectric material having a first dielectric constant; and
an inductor;
a second layer including:
a second dielectric material having a second dielectric constant, wherein the second dielectric constant is different than the first dielectric constant; and
a capacitor, including:
a first plate;
a second plate spaced from the first plate by a gap; and
wherein the second dielectric material is located in the gap between the first plate and the second plate;
a via in electrical communication with the inductor and one or more of the first plate or the second plate; and
a dielectric spacer separating the inductor and the capacitor from the die coupled with the package.
21. The electronic device of claim 20 , wherein the die includes a die substrate having a resistivity of about 1 Ω·cm to about 10 Ω·cm.
22. The electronic device of claim 21 , wherein the die substrate has a third dielectric constant of about 11.5 to about 12.5.
23. The electronic device of claim 20 , wherein the first dielectric constant is about 1.5 to about 2.5.
24. The electronic device of claim 20 , wherein the second dielectric constant is about 5 to about 15.