Recovery of memory from asynchronous power loss

1. A storage system comprising:

at least one non-volatile memory device comprising multiple memory cells organized in physical pages, each memory cell comprising multiple pages, including a lower page (LP), an upper page (UP), and an extra page (XP); and

a controller coupled to the at least one non-volatile memory device, wherein instructions are stored in the storage system, wherein the instructions, when executed by the controller, cause the controller to perform operations, comprising:

in response to a detected asynchronous power loss (APL) at the storage system, determine a number of zeros stored in the XPs of a first, physical page of memory cells; and

determine whether to write dummy data to the first physical page using the determined number of zeros in the XPs of the first physical page.

2. The storage system of claim 1 ,

wherein, in response to the detected APL, the controller is configured to detect one or ore fake programmed pages, wherein the first physical page is a detected fake programmed page.

3. The storage system of claim 1 ,

wherein the controller is configured to detect, upon resuming operation from a low-power state, if such low-power state was an APL.

4. The storage system of claim 1 ,

wherein, to determine the number of zeros stored in the XPs of the memory cells of the first physical page of memory cells, the controller is configured to read values stored in the XPs of the first physical page of memory cells.

5. The storage system of claim 1 ,

wherein, to determine whether to write the dummy data to the first physical page, the controller is configured to compare the determined number of zeros stored in the XPs of the first physical page to a threshold, and

wherein the controller is configured to write the dummy data to the first physical page of memory cells if the determined number of zeros stored in the XPs of the first physical page is less than the threshold.

6. The storage system of claim 5 ,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

7. The storage system of claim 5 ,

wherein the threshold is between 37.5% and 50% of the number of memory cells in the first physical page.

8. The storage system of claim 7 ,

wherein the threshold is 45% of the number of memory cells in the first physical page.

9. The storage system of claim 1 ,

wherein, to determine whether to write the dummy data to the first physical page, the controller is configured to compare the determined number of zeros in the XPs of the first physical page to a threshold, and

wherein the controller is configured to refrain from writing the dummy data to the first physical page of memory cells if the determined number of zeros in the XPs of the first physical page exceeds the threshold.

10. A method implemented by controller of a storage system comprising at least one non-volatile memory device comprising multiple memory cells organized in physical pages, each memory cell comprising multiple pages, including a lower page (LP), an upper page (UP), and an extra page (XP), the method comprising:

detecting an asynchronous power loss (APL) at the storage system;

in response to the detected APL, determining a number of zeros stored in the XPs of a first physical page of memory cells of the storage system; and

determining whether to write dummy data to the first physical page using the determined number of zeros in the XPs of the first physical page.

11. The method of claim 10 , comprising:

in response to the detected APL, detecting one or more fake programmed pages,

wherein determining the number of zeros stored in the XPs of the first physical page comprises in response to the detected one or more fake programmed pages, wherein the first physical page of memory cells is one of the one or more detected fake programmed pages.

12. The method of claim 10 ,

wherein detecting the APL comprises, upon resuming operation from a low-power state, detecting if such low-power state was an APL.

13. The method of claim 10 ,

wherein determining the number of zeros stored in the XPs of the memory cells of the physical page of memory cells comprises reading values stored in the XPs of the first physical page of memory cells.

14. The method of claim 10 ,

wherein determining whether to write the dummy data to the first physical page comprises:

comparing the determined number of zeros stored in the XPs of the first physical page to a threshold; and

writing the dummy data to the first physical page of memory cells if the determined number of zeros stored in the XPs of the first physical page is less than the threshold.

15. The method of claim 14 ,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

16. The method of claim 14 ,

wherein the threshold is between 37.5% and 50% of the number of memory cells in the first physical page.

17. The method of claim 16 ,

wherein the threshold is 45% of the number of memory cells in the first physical page.

18. The method of claim 10 ,

wherein determining whether to write the dummy data to the first physical page comprises:

comparing the determined number of zeros in the XPs of the first physical page to a threshold; and

refraining from writing the dummy data to the first physical page of memory cells if the determined number of zeros in the XPs of the first physical page exceeds the threshold.

19. At least one non-transitory device-readable storage medium comprising instructions that, when executed by a controller of a storage system comprising at least one non-volatile memory device comprising multiple memory cells organized in physical pages, each memory cell comprising multiple pages, including a lower page (LP), an upper page (UP), and an extra page (XP), cause the controller to perform operations comprising:

detecting an asynchronous power loss (APL) at the storage system;

in response to the detected APL, determining a number of zeros stored in the XPs of a first physical page of memory cells of the storage system; and

determining whether to write dummy data to the first physical page using the determined number of zeros in the XPs of the first physical page.

20. The at least one device-readable storage medium of claim 19 ,

wherein determining whether to write the dummy data to the first physical page comprises:

comparing the determined number of zeros stored in the XPs of the first physical page to a threshold; and

writing the dummy data to the first physical page of memory cells if the determined number of zeros stored in the XPs of the first physical page is less than the threshold,

wherein the threshold is between 37.5% and 50% of the number of memory cells in the first physical page.