Utilizing NAND buffer for DRAM-less multilevel cell programming
Programming a multilevel cell (MLC) nonvolatile (NV) media can be performed with internal buffer reuse to reduce the need for external buffering. The internal buffer is on the same die as the NV media to be programmed, along with a volatile memory to store data to program. The internal buffer is to read and program data for the NV media. Programming of the NV media includes staging first partial pages in the buffer for program, reading second partial pages from the NV media to the volatile memory, storing second partial pages in the buffer, and programming the NV media with the first partial pages and the second partial pages.
1. An apparatus comprising:
a nonvolatile (NV) media having an array of multilevel cells on a media die;
a buffer on the media die to buffer read data and program data for the NV media during a read operation and during a program operation, respectively, the buffer comprising a plurality of registers that each stores a partial page of data; and
a volatile memory on the media die, separate from the buffer, to read first partial pages for the program operation and stage the first partial pages in registers of the buffer, and subsequently read second partial pages for the program operation and stage the second partial pages in registers of the buffer with the first partial pages, wherein the first partial pages and the second partial pages are stored in separate registers and make up the program data for a multilevel cell of the media die, wherein the buffer is to flush the first partial pages and the second partial pages to the NV media to program the NV media.
2. The apparatus of claim 1 , wherein the program of the NV media comprises garbage collection to move data from a source media to the NV media.
3. The apparatus of claim 2 , wherein the source media comprises a single level cell (SLC) flash memory.
4. The apparatus of claim 2 , wherein the source media comprises one of a three level cell (TLC) flash memory, a quad level cell (QLC) flash memory, or a three-dimensional crosspoint (3DXP) memory.
5. The apparatus of claim 2 , wherein the source media comprises a dynamic random access memory (DRAM).
6. The apparatus of claim 1 , wherein to read the second partial pages to the volatile memory comprises performance of error checking and correction (ECC) on the second partial pages.
7. The apparatus of claim 1 , wherein program the NV media comprises flush the first partial pages and the second partial pages from the buffer to the NV media in response to loading of a new address to program in the NV media.
8. The apparatus of claim 1 , wherein program the NV media comprises flush the first partial pages and the second partial pages from the buffer to the NV media in response to a flush command.
9. The apparatus of claim 1 , wherein the buffer comprises read/write registers for the NV media.
10. The apparatus of claim 1 , wherein the NV media comprises quad level cell (QLC) flash memory.
11. The apparatus of claim 1 , wherein the NV media comprises one of a three level cell (TLC) flash memory, five level cell (5LC) flash memory, or a three-dimensional crosspoint (3DXP) memory.
12. The apparatus of claim 1 , wherein the volatile memory comprises a static random access memory (SRAM).
13. A computing device comprising:
a host processor; and
a solid state drive (SSD) coupled to the host processor, the SSD including
a nonvolatile (NV) media having an array of multilevel cells on a media die;
a volatile memory on the media die to store data to program the NV media; and
a buffer on the media die, separate from the volatile memory, to buffer read data and program data for the NV media during a read operation and during a program operation, respectively;
wherein the volatile memory is to read first partial pages from a source media for the program operation and stage the first partial pages in the buffer, then read second partial pages from the source media and stage the second partial pages in the buffer with the first partial pages, wherein the first partial pages and the second partial pages make up the program data for a multilevel cell of the media die, wherein the buffer is to flush the first partial pages and the second partial pages to the NV media to program the NV media.
14. The computing device of claim 13 , wherein the program of the NV media comprises garbage collection to move data from a single level cell (SLC) flash buffer memory to the NV media.
15. The computing device of claim 13 , wherein to read the second partial pages to the volatile memory comprises performance of error checking and correction (ECC) on the second partial pages.
16. The computing device of claim 13 , wherein program the NV media comprises flush the first partial pages and the second partial pages from the buffer to the NV media in response to loading of a new address to program in the NV media.
17. The computing device of claim 13 , wherein the buffer comprises a staging buffer for the NV media.
18. The computing device of claim 13 , wherein the NV media comprises a quad level cell (QLC) flash memory and wherein the volatile memory comprises a static random access memory (SRAM).
19. The computing device of claim 13 , further comprising:
a display communicatively coupled to the host processor;
a network interface communicatively coupled to the host processor; or
a battery to power the computing device.
20. The apparatus of claim 1 , wherein the NV media comprises a quad-plane NAND die.