Side-solderable leadless package
A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die; and
a plurality of contacts exposed from the encapsulant, wherein each of the plurality of contacts includes a half-etched portion forming a side surface that extends for an entire length or width of the encapsulant, wherein the side surface includes a convex U-shaped curve, and wherein the side surface includes a solder wettable layer formed over the side surface including on the convex U-shaped curve.
2. The semiconductor device of claim 1 , wherein the side surface of each of the plurality of contacts is exposed from the encapsulant.
3. The semiconductor device of claim 1 , further including an indentation formed in each of the plurality of contacts with the encapsulant deposited within the indentation of each of the plurality of contacts.
4. The semiconductor device of claim 1 , wherein one of the plurality of contacts includes a notch.
5. The semiconductor device of claim 1 , wherein the side surface is U-shaped in plan view.
6. The semiconductor device of claim 1 , further including:
a substrate; and
a solder fillet extending from a first contact of the plurality of contacts to the substrate.
7. The semiconductor device of claim 6 , wherein the solder fillet extends from the first contact to outside a footprint of the encapsulant in three different directions.
8. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die; and
a contact including an exposed side surface that extends for an entire length or width of the encapsulant, wherein the side surface includes a convex curve, wherein the side surface is formed by half-etching such that a height of the side surface is less than a height of the contact and a portion of the contact above the side surface extends beyond the side surface to an edge of the encapsulant.
9. The semiconductor device of claim 8 , wherein the side surface is exposed from the encapsulant.
10. The semiconductor device of claim 8 , further including an indentation formed in the contact with the encapsulant deposited within the indentation.
11. The semiconductor device of claim 8 , wherein the contact includes a notch filled with encapsulant and visible from outside the encapsulant.
12. The semiconductor device of claim 8 , wherein the side surface is plated with a solder wettable layer.
13. The semiconductor device of claim 8 , further including:
a substrate; and
a solder fillet extending from the contact to the substrate.
14. The semiconductor device of claim 13 , wherein the solder fillet extends from the contact in three different directions.
15. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die; and
a contact including a half-etched portion that extends for an entire length or width of the encapsulant, wherein the contact includes a convex curve, wherein a side surface of the contact is exposed from the encapsulant, and wherein the side surface of the contact extends for the entire length or width of the encapsulant.
16. The semiconductor device of claim 15 , wherein the convex curve is U-shaped in plan view.
17. The semiconductor device of claim 15 , further including:
a substrate; and
a solder fillet extending from the contact to the substrate, wherein the solder fillet extends from the contact in three different directions.