Silicon-oxygen compound, preparation method thereof, and related battery module, battery pack and device
The present application provide a silicon-oxygen compound, a preparation method thereof and related secondary battery, battery module, battery pack, and device. The silicon-oxygen compound provided by the present application has a formula of SiO x , in which x satisfies 0<x<2. The silicon-oxygen compound contains both sulfur and manganese element, and the sulfur element is present in an amount of 20 ppm˜300 ppm. The mass ratio of sulfur element to manganese element is from 1.5 to 10.
1. A silicon-oxygen composite having a chemical formula of SiOx, in which 0<x<2;
sulfur element having a content of 20 ppm-600 ppm; and
manganese element having a content from 5 ppm to 300 ppm,
wherein a mass ratio of the sulfur element to the manganese element is from 1.5 to 10.0,
wherein an X-ray diffraction pattern of the silicon-oxygen composite has:
a first diffraction peak at a position where the diffraction angle 2θ is 26°-30°, wherein the full width at half maxima of the first diffraction peak is 0.8°-3.2°;
a second diffraction peak at a position where the diffraction angle 2θ is 46°-50°, wherein the full width at half maxima of the second diffraction peak is 1.0°-4.2°; and
a third diffraction peak at a position where the diffraction angle 2θ is 54°-58°, wherein the full width at half maxima of the third diffraction peak is 0.8°-4.5° wherein a content of the manganese element is from 5 ppm to 300 ppm.
2. The silicon-oxygen composite according to claim 1 , wherein the content of the sulfur element is from 50 ppm to 200 ppm.
3. The silicon-oxygen composite according to claim 1 , wherein the mass ratio of the sulfur element to the manganese element is from 2.0 to 7.0.
4. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has a powder volume resistivity under a pressure of 20 MPa of 10 Ω·cm or less.
5. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has an average particle diameter Dv50 of 2 μm-15 μm.
6. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has a specific surface area from 1 m 2 /g to 7 m 2 /g.
7. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has a compacted density measured under a pressure of 5 tons (equivalent to 49KN) of 1.2 g/cm 3 -1.7 g/cm 3 .
8. The silicon-oxygen composite according to claim 1 , wherein a coating layer is coated on an outer surface of the silicon-oxygen composite, and the coating layer comprises one or more of a polymer, a carbon material, a metal material, and a metal compound.
9. A secondary battery, including the silicon-oxygen composite to claim 1 .
10. The silicon-oxygen composite according to claim 1 , wherein a content of the manganese element is from 10 ppm to 90 ppm.
11. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has a powder volume resistivity under a pressure of 20 MPa of 1 Ω·cm or less.
12. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has an average particle diameter Dv50 of 3 μm-12 μm.
13. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has a specific surface area from 2 m 2 /g to 6 m 2 /g.
14. The silicon-oxygen composite according to claim 1 , wherein the silicon-oxygen composite has a compacted density measured under a pressure of 5 tons (equivalent to 49KN) of 1.3 g/cm 3 -1.6 g/cm 3 .
15. A method for preparing the silicon-oxygen composite according to claim 1 , characterized in that, the method including includes the following steps:
providing raw materials comprising silicon dioxide powder, sulfur source, one or more of silicon oxide powder and metal silicon powder, and optionally manganese source; heating the raw material in an inert atmosphere under normal pressure or reduced pressure to generate gas; and
cooling the gas in an inert atmosphere under normal pressure or reduced pressure to deposit the gas to obtain the silicon-oxygen composite.
16. The method according to claim 15 , wherein the temperature of the deposition is from 800° C. to 1000° C.
17. The method according to claim 15 , further comprising: a step of crushing the obtained deposit after gas deposition; and a step of surface coating particulate matter after the obtained deposit is crushed.