Power module having an embedding structure
A power module includes: an embedding structure comprising an electrically insulating body; a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and a second semiconductor chip comprising a lateral high-side power transistor. The lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit. The switch node is electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body.
1. A power module, comprising:
an embedding structure comprising an electrically insulating body;
a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and
a second semiconductor chip comprising a lateral high-side power transistor,
wherein the lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit,
wherein the switch node is electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body.
2. The power module of claim 1 , wherein the second semiconductor chip further comprises a first driver circuit monolithically integrated with the lateral high-side power transistor and configured to drive a control terminal of the lateral high-side power transistor.
3. The power module of claim 2 , wherein the second semiconductor chip further comprises a second driver circuit monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive a control terminal of the vertical low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the vertical low-side power transistor through one or more fourth electrically conductive paths embedded in the electrically insulating body.
4. The power module of claim 3 , wherein the second semiconductor chip further comprises a modulator monolithically integrated with the first driver circuit, the second driver circuit and the lateral high-side power transistor and configured to generate modulation signals for controlling switching of the lateral high-side power transistor and the vertical low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip.
5. The power module of claim 1 , wherein the vertical low-side power transistor is a vertical power MOSFET, wherein gate and source terminals of the vertical power MOSFET face a second side of the electrically insulating body, and wherein a drain terminal of the vertical power MOSFET faces a first side of the electrically insulating body opposite the first side and forms part of the switch node.
6. The power module of claim 5 , wherein the lateral high-side power transistor is a lateral power MOSFET, wherein gate and drain terminals of the lateral power MOSFET face the first side of the electrically insulating body, and wherein a source terminal of the lateral power MOSFET faces the first side of the electrically insulating body, forms part of the switch node and is electrically connected to the drain terminal of the vertical power MOSFET through respective electrically conductive paths embedded in the electrically insulating body between the first semiconductor chip and the first side of the electrically insulating body.
7. The power module of claim 6 , wherein the source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partly overlap with one another.
8. The power module of claim 1 , wherein the electrically insulating body of the embedding structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein the first semiconductor chip is arranged in the cavity.
9. The power module of claim 1 , wherein the first semiconductor chip and the second semiconductor chip form a non-isolated point-of-load power converter configured to accept power input from an isolated dc-dc converter and provide dc power to a close-proximity load.
10. An electronic system, comprising:
a board;
a load attached to the board;
a power module attached to the board, configured to provide dc power to the load and comprising:
an embedding structure comprising an electrically insulating body;
a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and
a second semiconductor chip comprising a lateral high-side power transistor,
wherein the lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit configured to supply an output voltage to the load, the switch node being electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body; and
a controller configured to control operation of the power module and thereby regulate the dc power provided to the load.
11. The electronic system of claim 10 , wherein the second semiconductor chip further comprises a first driver circuit monolithically integrated with the lateral high-side power transistor and configured to drive a control terminal of the lateral high-side power transistor.
12. The electronic system of claim 11 , wherein the second semiconductor chip further comprises a second driver circuit monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive a control terminal of the vertical low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the vertical low-side power transistor through one or more fourth electrically conductive paths embedded in the electrically insulating body.
13. The electronic system of claim 12 , wherein the second semiconductor chip further comprises a modulator monolithically integrated with the first driver circuit, the second driver circuit and the lateral high-side power transistor and configured to generate modulation signals for controlling switching of the lateral high-side power transistor and the vertical low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip.
14. The electronic system of claim 13 , wherein the second semiconductor chip further comprises the controller monolithically integrated with the modulator, the first driver circuit, the second driver circuit and the lateral high-side power transistor.
15. The electronic system of claim 10 , wherein the vertical low-side power transistor is a vertical power MOSFET, wherein gate and source terminals of the vertical power MOSFET face a second side of the electrically insulating body, and wherein a drain terminal of the vertical power MOSFET faces the first side of the electrically insulating body opposite the second side and forms part of the switch node.
16. The electronic system of claim 15 , wherein the lateral high-side power transistor is a lateral power MOSFET, wherein gate and drain terminals of the lateral power MOSFET face the first side of the electrically insulating body, and wherein a source terminal of the lateral power MOSFET faces the first side of the electrically insulating body, forms part of the switch node and is electrically connected to the drain terminal of the vertical power MOSFET through respective electrically conductive paths embedded in the electrically insulating body between the first semiconductor chip and the first side of the electrically insulating body.
17. The electronic system of claim 16 , wherein the source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partly overlap with one another.
18. The electronic system of claim 10 , wherein the electrically insulating body of the embedding structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein the first semiconductor chip is arranged in the cavity.
19. The electronic system of claim 10 , wherein the first semiconductor chip and the second semiconductor chip form a non-isolated point-of-load power converter configured to accept power input from an isolated dc-dc converter and provide dc power to the load.
20. A power module, comprising:
an embedding structure comprising an electrically insulating body;
a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and
a second semiconductor chip comprising a lateral high-side power transistor,
wherein all signal I/O and input power connections to the second semiconductor chip are provided by electrically conductive paths embedded in the electrically insulating body,
wherein the vertical low-side power transistor and the lateral high-side power transistor are electrically connected within the embedding structure to form a switch node of a half bridge circuit,
wherein a terminal at a side of the electrically insulating body provides a point of external electrical contact for the switch node.
21. The power module of claim 20 , wherein the second semiconductor chip further comprises a driver circuit for the lateral high-side power transistor.