Semiconductor optical amplifier with asymmetric Mach-Zehnder interferometers
Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA.
1. A photonic integrated circuit comprising:
a semiconductor optical amplifier comprising a plurality of stages, the semiconductor optical amplifier configured to amplify a beam that includes a plurality of wavelengths;
a temperature sensor to detect temperature changes of the photonic integrated circuit, the photonic integrated circuit not being temperature controlled such that the semiconductor optical amplifier is uncooled and an operating temperature of the semiconductor optical amplifier varies;
a plurality of semiconductor Mach-Zehnder interferometers coupled to the semiconductor optical amplifier, each semiconductor Mach-Zehnder interferometer of the plurality of semiconductor Mach-Zehnder interferometers coupled to a single stage of the plurality of stages of the semiconductor optical amplifier, each semiconductor Mach-Zehnder interferometer comprising an integrated resistive element to cause a loss in an amplified beam received from a respective stage of the semiconductor optical amplifier to which it is coupled, each semiconductor Mach-Zehnder interferometer having a free spectral range that comprises the plurality of wavelengths amplified by the semiconductor optical amplifier; and
control circuitry comprising a lookup table to control the integrated resistive element of each semiconductor Mach-Zehnder interferometer in response to the temperature sensor detecting a temperature change of the photonic integrated circuit, the integrated resistive element controlling a tuned loss applied to a range of lower wavelengths of the plurality of wavelengths of the amplified beam for each stage of the plurality of stages of the semiconductor optical amplifier to compensate for excess gain added to the range of lower wavelengths of the plurality of wavelengths due to the temperature change.
2. The photonic integrated circuit of claim 1 , further comprising a sensor configured to detect an optical power value of the plurality of wavelengths of the beam.
3. The photonic integrated circuit of claim 2 , wherein the control circuitry is further configured to:
receive the optical power value from the sensor; and
determine a difference between the detected optical power value and a reference optical power value, and wherein the control circuitry controls a central frequency of at least one of the plurality of semiconductor Mach-Zehnder interferometers to compensate for the excess gain based on the difference between the detected optical power value and the reference optical power value.
4. The photonic integrated circuit of claim 1 , further comprising an arrayed waveguide grating configured to separate the beam.
5. The photonic integrated circuit of claim 4 , further comprising a sensor that includes a plurality of detectors, each detector to receive light from the arrayed waveguide grating.
6. The photonic integrated circuit of claim 1 , wherein the plurality of semiconductor Mach-Zehnder interferometers are in series.
7. The photonic integrated circuit of claim 1 , wherein a quantity of the plurality of semiconductor Mach-Zehnder interferometers is fewer than a quantity of the plurality of stages.
8. The photonic integrated circuit of claim 1 , wherein a quantity of the plurality of semiconductor Mach-Zehnder interferometers is equal to a quantity of the plurality of stages.
9. The photonic integrated circuit of claim 1 , wherein the semiconductor optical amplifier direct the beam through a III-V semiconductor material of the photonic integrated circuit.
10. The photonic integrated circuit of claim 9 , further comprising an additional semiconductor optical amplifier to receive the amplified beam from at least one of the plurality of semiconductor Mach-Zehnder interferometers.
11. The photonic integrated circuit of claim 10 , wherein the semiconductor optical amplifier directs light through the semiconductor material, and wherein the additional semiconductor optical amplifier directs light through an additional III-V semiconductor material different from the III-V semiconductor material.
12. The photonic integrated circuit of claim 1 , wherein at least one of the plurality of semiconductor Mach-Zehnder interferometers is an asymmetric semiconductor Mach-Zehnder interferometer.
13. The photonic integrated circuit of claim 1 , further comprising a multiplexer configured to combine a plurality of input beams to form the beam.
14. The photonic integrated circuit of claim 1 , further comprising a de-multiplexer configured to separate the beam into a plurality of beams.
15. The photonic integrated circuit of claim 1 , wherein the tuned loss is a magnitude that is less than a gain of the semiconductor optical amplifier.
16. A method, comprising:
amplifying, with a semiconductor optical amplifier that comprises a plurality of stages in a photonic integrated circuit, a beam that includes a plurality of wavelengths to form an amplified beam for each stage of the plurality of stages;
detecting, with a temperature sensor in the photonic integrated circuit, a temperature change, the photonic integrated circuit not being temperature controlled such that the semiconductor optical amplifier is uncooled and an operating temperature of the semiconductor optical amplifier varies;
receiving the amplified beam from each stage of the semiconductor optical amplifier using a plurality of semiconductor Mach-Zehnder interferometers, each semiconductor Mach- Zehnder interferometer of the plurality of semiconductor Mach-Zehnder interferometers coupled to a single stage of the semiconductor optical amplifier in the photonic integrated circuit, each semiconductor Mach-Zehnder interferometer comprising an integrated resistive element to cause a loss in the amplified beam received from a respective stage of the semiconductor optical amplifier to which it is coupled; and
controlling, using control circuitry of the photonic integrated circuit, the integrated resistive element of each semiconductor Mach-Zehnder interferometer integrated in the photonic integrated circuit in response to the temperature sensor detecting the temperature change of the photonic integrated circuit, each semiconductor Mach-Zehnder interferometer having a free spectral range that comprises the plurality of wavelengths amplified by the semiconductor optical amplifier. the integrated resistive element controlling a tuned loss applied to a range of lower wavelengths of the plurality of wavelengths of the amplified beam for each stage of the plurality of stages of the semiconductor optical amplifier to compensate for excess gain added to the range of lower wavelengths of the plurality of wavelengths due to the temperature change.