Metal-insulator-metal capacitors

1. A metal-insulator-metal (MIM) capacitor comprising:

a first group of metal contacts disposed on a first region of an isolation layer on a semiconductor layer spaced apart from each other in a first direction;

a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction;

a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts;

a first metal electrode disposed to contact top surfaces of the first group of metal contacts; and

a second metal electrode disposed to contact top surfaces of the second group of metal contacts,

wherein the first group of metal contacts are electrically coupled by the first metal electrode, and the second group of metal contacts are electrically coupled by the second metal electrode, and

wherein the second group of metal contacts face respective metal contacts of the first group of metal contacts in a second direction intersecting the first direction.

2. The MIM capacitor of claim 1 , wherein the number of the first group of metal contacts is equal to the number of the second group of metal contacts.

3. The MIM capacitor of claim 1 , wherein the isolation layer is a trench isolation layer.

4. The MIM capacitor of claim 1 ,

wherein the first metal electrode has a planar shape; and

wherein the second metal electrode has a planar shape.