Process for thin film deposition through controlled formation of vapor phase transient species

1. A method for deposition of a silicon-based thin film onto a substrate in a deposition chamber, the method comprising:

providing a deposition chamber containing a substrate;

providing a synthesis chamber which is distinct from the deposition chamber;

connecting the synthesis chamber to the deposition chamber with a vacuum interlock or valving system;

providing a source precursor containing more than two silicon atoms to the synthesis chamber;

maintaining the working pressure in the synthesis chamber in the range of 10 to 150 torr;

generating a vapor phase transient species containing more than one silicon atom from the source precursor in the synthesis chamber;

wherein the temperature of the synthesis chamber during generation of the vapor phase transient species is maintained at a temperature of 250° C. to 350° C.;

controlling a concentration or partial pressure of the vapor phase transient species in the synthesis chamber using a vacuum, inert gas, or a stabilizing gas to prevent self-reaction of the transient species;

and

delivering the vapor phase transient species to the deposition chamber, where the vapor phase transient species decomposes to form a silicon-based thin film on the substrate.

2. The method of claim 1 ,

wherein the source precursor is a perhydridosilane containing from 3 to 8 silicon atoms, and

wherein the vapor phase transient species is a silylene containing 2 or more silicon atoms species.

3. The method of claim 2 , wherein the perhydridosilane is isotetrasilane and the silylene species is bis(trihydridosilyl)silylene.

4. The method of claim 1 , wherein the substrate temperature for deposition of the silicon-based film is maintained at about 350° C. to about 550° C.

5. The method of claim 1 , wherein deposition of the thin film onto the substrate surface is a method selected from the group consisting of chemical vapor deposition, atomic layer deposition, molecular layer deposition and self-assembled monolayer deposition.

6. The method of claim 1 , wherein the transient species are synthesized at a temperature not to exceed 650° C. and/or electron ionization impact energies not to exceed 20 eV.

7. A method for deposition of a silicon-based thin film onto a substrate in a deposition chamber, the method comprising:

providing a deposition chamber containing a substrate;

equipping the deposition chamber with a vacuum manifold and a pumping system to maintain pressure in the deposition chamber;

providing a source precursor containing more than two silicon atoms to the deposition chamber;

heating the deposition chamber to a conversion temperature between about 350° C. and about 650° C. to generate a vapor phase transient species containing more than one silicon atom from the source precursor in-situ in the deposition chamber, wherein the vapor phase transient species is generated independently from the substrate surface;

controlling a concentration or partial pressure of the vapor phase transient species in the deposition chamber using a vacuum, inert gas, or a stabilizing gas to prevent self-reaction of the transient species

(a) maintaining the transient species at a vapor pressure of not greater than 100 Torr and maintaining the substrate at a temperature of up to 500° C.; or

(b) maintaining the transient species at a vapor pressure of not greater than 40 Torr and maintaining the substrate at a temperature of greater than 500° C. to 550° C.;

wherein the vapor pressure of the transient species and the substrate temperature are controlled to inhibit self-reaction of the transient species during their synthesis and prevent gas phase depletion; and

subsequently depositing a silicon-based thin film on the substrate from the vapor phase transient species.

8. The method of claim 7 ,

wherein the source precursor is a perhydridosilane containing from 3 to 8 silicon atoms, and

wherein the vapor phase transient species is a silylene species containing 2 or more silicon atoms.

9. The method of claim 8 , wherein the perhydridosilane is isotetrasilane and the silylene species is bis(trihydridosilyl)silylene.

10. The method of claim 7 , wherein the deposition chamber is heated to a conversion temperature between about 250° C. and about 350° C.

11. The method of claim 7 , wherein deposition of the thin film onto the substrate surface is a method selected from the group consisting of chemical vapor deposition, atomic layer deposition, molecular layer deposition and self-assembled monolayer deposition.