Thin film of metal oxide, organic electroluminescent device including thin film, photovoltaic cell including thin film, and manufacturing method of thin film

1. A manufacturing method of manufacturing a thin film, the thin film comprising zinc (Zn), tin (Sn), silicon (Si) and oxygen (O); and wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is present in the thin film in an amount of greater than 15 mol % and less than or equal to 95 mol %,

the method comprising:

before forming the thin film in a vacuum chamber by a sputtering method,

reducing a pressure in the vacuum chamber to 8.0×10 −4 Pa or less;

introducing a sputtering gas comprising oxygen into the vacuum chamber; and

setting the pressure in the vacuum chamber to 0.1 Pa or more but 5.0 Pa or less, to perform deposition of the thin film, and

depositing the thin film by depositing zinc (Zn), tin (Sn), silicon (Si), and oxygen (O), in the vacuum chamber in which air is exhausted and oxygen was introduced, by a pulsed laser deposition (PLD) method.

2. The manufacturing method according to claim 1 , wherein a target used in the sputtering method comprises Zn, Sn, and Si, and wherein an atomic fraction of silicon atoms as defined by Si/(Zn+Sn+Si) in the target is greater than or equal to 0.01 but less than or equal to 0.70.

3. The method according to claim 1 , wherein a thickness of the thin film is greater than or equal to 10 nm and less than or equal to 2000 nm.

4. The method according to claim 1 , wherein a thickness of the thin film is greater than or equal to 200 nm and less than or equal to 2000 nm.

5. The method according to claim 1 , the thin film comprising zinc (Zn), tin (Sn), silicon (Si) and oxygen (O); and wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is present in the thin film in an amount of greater than 80 mol % and less than or equal to 95 mol %.

6. The method according to claim 1 , wherein the thin film is used for manufacturing an organic electroluminescent device, the organic electroluminescent device comprising at least one layer selected from the group consisting of an electron injection layer and a hole blocking layer,

wherein: the at least one layer is a thin film of metal oxide comprising zinc (Zn), tin (Sn) silicon (Si), and oxygen (O); and wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is present in the thin film in an amount of greater than or equal to 15 mol % and less than or equal to 95 mol %.

7. A method of manufacturing a thin film, the thin film comprising zinc (Zn), tin (Sn), and oxygen (O); and wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is present in the thin film in an amount of greater than 15 mol % and less than or equal to 95 mol %,

the method comprising:

before forming the thin film in a vacuum chamber by a sputtering method,

reducing a pressure in the vacuum chamber to 8.0×10 −4 Pa or less;

introducing a sputtering gas comprising oxygen into the vacuum chamber; and

setting the pressure in the vacuum chamber to 0.1 Pa or more but 5.0 Pa or less, to perform deposition of the thin film, and

depositing the thin film by depositing zinc (Zn), tin (Sn), and oxygen (O), in the vacuum chamber in which air is exhausted and oxygen was introduced, by a pulsed laser deposition (PLD) method.

8. The method according to claim 7 , wherein the thin film is used for manufacturing an organic electroluminescent device, and the thin film includes silicon (Si).

9. The method according to claim 7 , wherein the thin film is used for manufacturing an organic electroluminescent device, and the thin film does not substantially include silicon (Si).

10. The method according to claim 7 , wherein the thin film is used for manufacturing a photovoltaic cell, and the thin film includes silicon (Si).

11. The method according to claim 7 , wherein the thin film is used for manufacturing a photovoltaic cell, and the thin film does not substantially include silicon (Si).