Slicing micro-LED wafer and slicing micro-LED chip
A slicing micro-light emitting diode (LED) wafer includes a driver circuit substrate, a plurality of micro-LEDs formed on the driver circuit substrate, the plurality of micro-LEDs being made from a plurality of epitaxial layer slices arranged side-by-side on the driver circuit substrate, and a bonding layer, formed at bottoms of the plurality of epitaxial layer slices and on a top surface of the driver circuit substrate, for bonding the micro-LEDs and the driver circuit substrate.
1. A slicing micro-light emitting diode (LED) wafer, comprising:
a driver circuit substrate;
a plurality of epitaxial layer slices arranged side-by-side on the driver circuit substrate, wherein each of the plurality of epitaxial layer slices is configured to emit, when applied with a voltage, light having one color, and a color emitted by one of the plurality of epitaxial layer slices being different than a color emitted by an adjacent one of the plurality of epitaxial slices;
a plurality of micro-LEDs formed on the driver circuit substrate, the plurality of micro-LEDs including portions of the plurality of epitaxial layer slices arranged side-by-side on the driver circuit substrate; and
a bonding layer, formed at bottoms of the plurality of epitaxial layer slices and on a top surface of the driver circuit substrate, for bonding the micro-LEDs and the driver circuit substrate.
2. The slicing micro-LED wafer according to claim 1 , wherein an array of the micro-LEDs includes portions of one of the plurality of epitaxial layer slices.
3. The slicing micro-LED wafer according to claim 1 , wherein the micro-LEDs including portions of the same sliced epitaxial layer configured to emit same color light.
4. The slicing micro-LED wafer according to claim 1 , wherein the epitaxial layer slices include a first color epitaxial layer slice configured to emit a first color, a second epitaxial layer slice configured to emit a second color, and a third epitaxial layer slice configured to emit a third color,
the first epitaxial layer slice, the second epitaxial layer slice, and the third epitaxial layer slice are arranged side by side to form a display panel.
5. The slicing micro-LED wafer according to claim 1 , wherein the epitaxial layer slices include a first epitaxial layer slice configured to emit a first color and a second epitaxial layer slice configured to emit a second color,
the first epitaxial layer slice and the second epitaxial layer slice are arranged side by side to form a display panel.
6. The slicing micro-LED wafer according to claim 1 , wherein each of the micro-LEDs is a red LED, a green LED, or a blue LED.
7. The slicing micro-LED wafer according to claim 1 , wherein a pixel is formed by an array of the micro-LEDs, or one of the micro-LEDs.
8. The slicing micro-LED wafer according to claim 1 , wherein a space between adjacent ones of the micro-LEDs is less than a space between adjacent epitaxial layer slices.
9. The slicing micro-LED wafer according to claim 8 , wherein the distance between the adjacent epitaxial layer slices is more than 300 μm.
10. The slicing micro-LED wafer according to claim 1 , wherein a shape of each of the epitaxial layer slices is rectangular.
11. The slicing micro-LED wafer according to claim 1 , wherein, the epitaxial layer slices are arranged in an array.
12. The slicing micro-LED wafer according to claim 10 , wherein the bonding layer includes portions of a plurality of epitaxial pre-bonding layer slices each formed at a bottom of a corresponding one of the epitaxial layer slices, and a shape of each epitaxial pre-bonding layer slice is the same as a shape of a corresponding epitaxial layer slice.
13. The slicing micro-LED wafer according to claim 12 , wherein the plurality of epitaxial pre-bonding layer slices are arranged in an array.
14. The slicing micro-LED wafer according to claim 13 , wherein an array shape of the plurality of epitaxial pre-bonding layer slices is the same as an array shape of the plurality of epitaxial layer slices.
15. The slicing micro-LED wafer according to claim 1 , wherein thicknesses of the plurality of epitaxial layer slices are the same.
16. The slicing micro-LED wafer according to claim 1 , wherein the bonding layer includes portions of a plurality of epitaxial pre-bonding layer slices each formed at a bottom of a corresponding one of the epitaxial layer slices, and a driver circuit pre-bonding layer at a top surface of the driver circuit substrate.
17. The slicing micro-LED wafer according to claim 16 , wherein a shape of each epitaxial pre-bonding layer slice is the same as a shape of a corresponding epitaxial layer slice.
18. The slicing micro-LED wafer according to claim 16 , wherein the driver circuit pre-bonding layer is a continuous film.