Memory device and method of operating the memory device
Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell array including multiple planes, a peripheral circuit configured to perform an operation on the multiple planes, a control memory configured to store control codes for controlling the peripheral circuit, and a plurality of independent control logic configured to, when a command corresponding to each of the planes is received from a memory controller, control the peripheral circuit with reference to a control code corresponding to the command in response to the command. The control memory includes a common memory configured to be accessible in common by the plurality of independent control logic, and a temporary storage including areas respectively corresponding to the planes.
1. A memory device, comprising:
a memory cell array including multiple planes;
a peripheral circuit configured to perform an operation on the multiple planes;
a control memory configured to store control codes for controlling the peripheral circuit; and
a plurality of independent control logic configured to, when a command corresponding to each of the planes is received from a memory controller, control the peripheral circuit with reference to a control code corresponding to the command in response to the command,
wherein the control memory comprises:
a common memory configured to be accessible in common by the plurality of independent control logic; and
a temporary storage including areas respectively corresponding to the planes, and
wherein each of the independent control logic is configured to:
when the control code corresponding to the command is present in the temporary storage, access the temporary storage and acquire the control code from the temporary storage; and
when the control code corresponding to the command is not present in the temporary storage, access the common memory and acquire the control code from the common memory.
2. The memory device according to claim 1 , wherein each of the independent control logic is configured to:
store the control code acquired from the common memory in one of the areas of the temporary storage, or
store a control code acquired from one of the areas of the temporary storage in one of remaining areas of the temporary storage.
3. The memory device according to claim 1 , wherein:
the command is a command indicating a plane-interleaved read operation on the planes, and
the command includes at least one of a least significant bit (LSB) read command, a center significant bit (CSB) read command, and a most significant bit (MSB) read command for each of the planes.
4. The memory device according to claim 3 , wherein the control code includes at least one of a control code for performing an LSB page read operation corresponding to the LSB read command, a control code for performing a CSB page read operation corresponding to the CSB read command, and a control code for performing an MSB page read operation corresponding to the MSB read command.
5. The memory device according to claim 3 , wherein the common memory includes:
a main area configured to store a control code for performing at least one of a program operation, a read operation, and an erase operation; and
a sub-area configured to store a control code corresponding to the plane-interleaved read operation.
6. The memory device according to claim 1 , wherein each of the areas comprises a shift register.
7. The memory device according to claim 1 , wherein the plurality of independent control logic comprise:
first independent control logic configured to store the control code acquired from the common memory in a first area, among the areas, and to control the peripheral circuit so that an operation on a first plane, among the multiple planes, is performed with reference to the control code stored in the common memory, and
second independent control logic configured to control the peripheral circuit so that an operation on a second plane, among the multiple planes, is performed with reference to the control code stored in the first area before the operation on the first plane is terminated.
8. The memory device according to claim 7 , wherein the control code stored in the first area is a control code for performing an operation, identical to the operation performed on the second plane, on the first plane.
9. A method of operating a memory device including multiple planes, comprising:
receiving a command indicating an operation on one of the planes from a memory controller;
accessing one of a common memory, configured to be accessible in common by a plurality of independent control logic, and a temporary storage and acquiring a control code corresponding to the command; and
generating a control signal corresponding to the command with reference to the control code,
wherein acquiring the control code is configured to:
when the control code corresponding to the command is present in the temporary storage, access the temporary storage and acquire the control code from the temporary storage; and
when the control code corresponding to the command is not present in the temporary storage, access the common memory and acquire the control code from the common memory.
10. The method according to claim 9 , further comprising:
after acquiring the control code, storing the acquired control code in the temporary storage.
11. The method according to claim 10 , wherein the temporary storage includes areas respectively corresponding to the planes.
12. The method according to claim 11 , wherein each of the areas comprises a shift register.
13. The method according to claim 11 , wherein storing the acquired control code in the temporary storage comprises:
storing the control code in one of remaining areas other than an area from which the control code is acquired, among the areas.
14. The method according to claim 9 , wherein the command includes at least one of a least significant bit (LSB) read command, a center significant bit (CSB) read command, and a most significant bit (MSB) read command.
15. The method according to claim 14 , wherein the control code includes at least one of a control code for performing an LSB page read operation corresponding to the LSB read command, a control code for performing a CSB page read operation corresponding to the CSB read command, and a control code for performing an MSB page read operation corresponding to the MSB read command.
16. The method according to claim 11 , wherein:
acquiring the control code comprises acquiring the control code from the common memory, and
generating the control signal comprises:
storing the control code acquired from the common memory in a first area, among the areas;
performing an operation on a first plane, among the multiple planes, with reference to the control code stored in the common memory; and
performing an operation on a second plane, among the multiple planes, with reference to the control code stored in the first area before the operation on the first plane is terminated.
17. The method according to claim 16 , wherein the control code stored in the first area is a control code for performing an operation, identical to the operation performed on the second plane, on the first plane.