Ultra-smooth sidewall pixelated array LEDs
Pixelated array light emitters are formed with closely-spaced pixels having ultra-smooth sidewalk. In methods for making such pixelated array light emitters, a converter layer of phosphor particles dispersed in a binder is disposed on a carrier, and then singulated by saw cuts or similar methods to form an array of phosphor pixels. The binder is fully cured prior to singulation of the converter layer. Further, the carrier is rigid rather than flexible. As a consequence of fully curing the binder and of using a rigid carrier to support the converter layer, singulation results in phosphor pixels having smooth side walls. The array of phosphor pixels is subsequently attached to a corresponding array of LEDs with an adhesive layer, separate from the binder used to form the converter layer. The pixel sidewalls may be formed with controlled morphology, for example at acute or obtuse angles with respect to the carrier.
1. A method of fabricating a wavelength converter structure, the method comprising:
depositing on a first surface of a carrier substrate a converter layer comprising phosphor particles dispersed in a binder;
fully curing the binder after depositing the converter layer on the first surface of the carrier substrate;
depositing an adhesive layer on the converter layer after fully curing the binder; and
after depositing the adhesive layer, forming trenches entirely through the adhesive layer and the converter layer by removing portions of the adhesive layer and the converter layer to define a plurality of spaced-apart phosphor pixels each comprising a remaining portion of the adhesive layer.
2. The method of claim 1 , wherein forming trenches comprises forming trenches partially through the carrier substrate.
3. The method of claim 1 , wherein the binder is or comprises a silicone and fully curing the binder comprises thermally curing the silicone.
4. The method of claim 1 , wherein the adhesive is or comprises a silicone.
5. The method of claim 1 , wherein the trenches define phosphor pixel side walls having a roughness parameter Ra of less than or equal to about 100 nanometers.
6. The method of claim 1 , wherein the trenches define phosphor pixel side walls that are oriented at acute or obtuse angels with respect to the first surface of the carrier substrate.
7. The method of claim 1 , wherein forming the trenches comprises cutting through the adhesive and converter layers with a saw.
8. The method of claim 7 , wherein the saw comprises a tapered blade that cuts the trenches to define phosphor pixel side walls that are oriented at acute or obtuse angels with respect to the first surface of the carrier substrate.
9. The method of claim 1 , comprising:
removing a sufficient portion of the carrier substrate from a second surface of the carrier substrate, opposite from the first surface, to reach and open the trenches and thereby expose phosphor pixel side walls defined by the trenches; and
coating the exposed phosphor pixel side walls with a reflective or scattering material.
10. The method of claim 9 , wherein the reflective or scattering material comprises DBR structures.
11. The method of claim 1 , wherein;
forming the trenches comprises cutting through the adhesive and converter layers with a saw;
the saw comprises a tapered blade that cuts the trenches to define phosphor pixel side walls that are oriented at acute or obtuse angels with respect to the first surface of the carrier substrate; and
the phosphor pixel side walls have a roughness parameter Ra of less than or equal to about 100 nanometers.
12. The method of claim 1 wherein the phosphor pixels are rectangular.
13. A method of fabricating an array of phosphor converted LEDs, the method comprising the method of claim 1 , and using the remaining portion of adhesive layer on each phosphor pixel to attach a corresponding LED to each of the phosphor pixels.
14. The method of claim 1 , comprising:
removing all of the carrier substrate after removing forming trenches entirely through the adhesive layer and the converter layer.
15. The method of claim 1 , wherein the carrier substrate is rigid.
16. The method of claim 1 , wherein the carrier substrate is formed from a glass.
17. The method of claim 1 , wherein the converter layer has a thickness of about 50 microns to about 200 microns.
18. The method of claim 1 , wherein forming trenches comprises forming the trenches to have a width of about 5 microns to about 200 microns.
19. The method of claim 1 , wherein the adhesive layer has a thickness of about 0.1 microns to about 5 microns.
20. The method of claim 9 , wherein the reflective or scattering material comprises TiO 2 particles embedded in silicone.