IP Library Granted Patent US 11,334,427
Granted Patent B2
US 11,334,427 · App. 17/162,807 · Granted May 17, 2022

System and method to reduce address range scrub execution time in non-volatile dual inline memory modules

Inventors: Ching-Lung Chao (Austin, TX); Shih-Hao Wang (New Taipei, TW); Hsin-Chieh Wang (Taoyuan, TW)
Assignee: Dell Products L.P.
G06F11/1016G06F12/0246
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Quick Facts
Patent No.
US 11,334,427
App. No.
17/162,807
Granted
May 17, 2022
Kind
B2
Abstract

A non-volatile dual in-line memory module (NVDIMM) instantiates first and second partitions of non-volatile memory. The first partition is reserved and is not accessible to an operating system instantiated. The second partition is accessible to the operating system. A processor detects a first bad memory location in the second partition, stores a first system physical address of the first bad memory location to a system bad memory locations list, and stores a first DIMM physical address of the first bad memory location to a first NVDIMM bad memory locations list in the first partition.

Claims (41)

1. A non-volatile dual in-line memory module (NVDIMM), comprising:

a first partition of non-volatile memory; and

a second partition of non-volatile memory;

wherein the first partition is a reserved partition that is not accessible to an operating system instantiated on an information handling system into which the NVDIMM is installed, and the second partition is accessible to the operating system, and wherein the NVDIMM receives a first DIMM physical address (DPA) associated with a first bad memory location within the second partition, and stores the DPA to a NVDIMM bad memory locations list in the first partition.

2. The NVDIMM of claim 1 , wherein the first partition includes a first region reserved for a manufacturer of the NVDIMM, and a second region reserved for a manufacturer of the information handling system.

3. The NVDIMM of claim 2 , wherein the NVDIMM bad memory locations list is in the second region of the first partition.

4. The NVDIMM of claim 1 , further comprising:

a third partition of non-volatile memory, wherein the third partition includes configuration data for the NVDIMM.

5. The NVDIMM of claim 4 , further comprising:

a fourth partition of non-volatile memory, wherein the fourth partition includes namespace data for the NVDIMM.

6. The NVDIMM of claim 1 , wherein the NVDIMM is configured to provide the NVDIMM bad memory locations list to an address range scrub (ARS) process of the information handling system.

7. The NVDIMM of claim 1 , further comprising:

a high-bandwidth data communication interface; and

a low-bandwidth data communication interface.

8. The NVDIMM of claim 7 , wherein the high-bandwidth data communication interface is a Double-Data Rate-5 (DDR5) data communication interface.

9. The NVDIMM of claim 7 , further comprising:

serial presence detect (SPD) data.

10. The NVDIMM of claim 9 , wherein the low-bandwidth data communication interface is a System Management Bus (SMBus) interface, and wherein the SPD data is accessed via the SMBus.

11. A method, comprising:

providing, on a non-volatile dual in-line memory module (NVDIMM), a first partition of non-volatile memory; and

restricting access to the first partition from an operating system instantiated on an information handling system into which the NVDIMM is installed;

providing, on the NVDIMM, a second partition of non-volatile memory;

permitting access to the second partition to the operating system;

receiving a first DIMM physical address (DPA) associated with a first bad memory location within the second partition; and

storing the DPA to an NVDIMM bad memory locations list in the first partition.

12. The method of claim 11 , wherein the first partition includes a first region reserved for a manufacturer of the NVDIMM, and a second region reserved for a manufacturer of the information handling system.

13. The method of claim 12 , wherein the NVDIMM bad memory locations list is in the second region of the first partition.

14. The method of claim 11 , further comprising providing, on the NVDIMM, a third partition of non-volatile memory, wherein the third partition includes configuration data for the NVDIMM.

15. The method of claim 14 , further comprising providing, on the NVDIMM, a fourth partition of non-volatile memory, wherein the fourth partition includes namespace data for the NVDIMM.

16. The method of claim 11 , further comprising providing the NVDIMM bad memory locations list to an address range scrub process of the information handling system.

17. The method of claim 11 , further comprising:

providing, on the NVDIMM, a high-bandwidth data communication interface; and

providing, on the NVDIMM, a low-bandwidth data communication interface.

18. The method of claim 17 , wherein the high-bandwidth data communication interface is a double-data rate-5 data communication interface.

19. The method of claim 17 , further comprising providing, on the NVDIMM, serial presence detect data, wherein the low-bandwidth data communication interface is a system management bus interface, and wherein the serial presence detect data is accessed via the system management bus.

20. A non-volatile dual in-line memory module (NVDIMM), comprising:

a first partition of non-volatile memory;

a second partition of the non-volatile memory;

a third partition of the non-volatile memory; and

a fourth partition of the non-volatile memory;

wherein the first partition is a reserved partition that is not accessible to an operating system instantiated on an information handling system into which the NVDIMM is installed, the second partition is accessible to the operating system, the third partition includes configuration data for the NVDIMM, and the fourth partition includes namespace data for the NVDIMM, wherein the NVDIMM receives a first DIMM physical address (DPA) associated with a first bad memory location within the second partition, and stores the DPA to a NVDIMM bad memory locations list in the first partition, wherein the first partition includes a first region reserved for a manufacturer of the NVDIMM, and a second region reserved for a manufacturer of the information handling system, and wherein the NVDIMM bad memory locations list is in the second region of the first partition.

Assignments (8)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL/FRAME (055479/0342) Recorded Jun 10, 2022
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
To: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
Reel/Frame 062021/0460 →
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL/FRAME (055479/0051) Recorded Jun 10, 2022
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
To: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
Reel/Frame 062021/0663 →
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL/FRAME (056136/0752) Recorded Jun 10, 2022
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
To: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
Reel/Frame 062021/0771 →
RELEASE OF SECURITY INTEREST AT REEL 055408 FRAME 0697 Recorded Nov 2, 2021
From: CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH
To: DELL PRODUCTS L.P.; EMC IP HOLDING COMPANY LLC
Reel/Frame 058001/0553 →
SECURITY INTEREST Recorded Mar 3, 2021
From: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 056136/0752 →
SECURITY INTEREST Recorded Mar 3, 2021
From: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 055479/0051 →
SECURITY INTEREST Recorded Mar 3, 2021
From: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 055479/0342 →
SECURITY AGREEMENT Recorded Feb 25, 2021
From: EMC IP HOLDING COMPANY LLC; DELL PRODUCTS L.P.
To: CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH
Reel/Frame 055408/0697 →