SEMICONDUCTOR DEVICE
A semiconductor device is disclosed including a sub-layer with first conductivity type, a drift layer with first conductivity type, a base region with second conductivity type positioned on the drift layer, a source region in contact with the base region, a source electrode, a plurality of trenches, at least one of the trenches in contact with the drift layer, the base region, and the source region, a plurality of insulating regions, at least one of the insulating regions positioned inside of each trench, a plurality of gate electrodes, at least one of the gate electrodes positioned inside of each trench; and a plurality of field plates, at least one of the field plates electrically connected to the source electrode and positioned in the insulating region in the trench. The field plate comprises high-resistance polysilicon.
1 . A semiconductor device comprising:
a sub-layer with first conductivity type;
a drift layer with first conductivity type;
a base region with second conductivity type positioned on the drift layer;
a source region in contact with the base region;
a source electrode;
a plurality of trenches, at least one of the trenches in contact with the drift layer, the base region, and the source region;
a plurality of insulating regions, at least one of the insulating regions positioned inside of each trench;
a plurality of gate electrodes, at least one of the gate electrodes positioned inside of each trench; and
a plurality of field plates, at least one of the field plates electrically connected to the source electrode and positioned in the insulating region in the trench, wherein
the field plate comprises high-resistance polysilicon.
2 . The semiconductor device according to claim 1 , wherein a resistance between one of the field plates inside of a trench and the source electrode is 50 kΩ or more to 800 kΩ or less.
3 . The semiconductor device according to claim 1 , wherein the resistance between one of the field plates and the source electrode is 58 kΩ or more to 254 kΩ or less.
4 . The semiconductor device according to claim 1 , wherein the drift layer comprises impurities, a pinch-off state does not substantially occur at the impurity concentration.
5 . The semiconductor device according to claim 1 , wherein the gate electrode is positioned closer to the sub-layer side than the base region.
6 . The semiconductor device according to claim 1 , wherein portion of the gate electrode having a shortest distance from the sub-layer is positioned shorter than a distance of the sub-layer from the portion of the base region in contact with the trench of the gate electrode.
7 . The semiconductor device according to claim 1 , wherein portion of the gate electrode having the shortest distance from the sub layer is positioned in a range of 0.1 μm or more and 0.5 μm or less than the distance of the sub-layer from the portion of the base region in contact with the trench of the gate electrode.
8 . The semiconductor according to claim 1 , wherein further comprises a shallow region positioned inside the base region between the trenches, and positioned below a contact digging structure, and below a silicon contact.
9 . The semiconductor device according to claim 8 , wherein the shallow region comprises a second conductivity type.
10 . The semiconductor device according to claim 8 , wherein the shallow region comprises a higher impurity concentration than the base region.
11 . The semiconductor device according to claim 1 , wherein the resistance between one of the field plates and the source electrode is 25 kΩ or more to 300 kΩ or less.
12 . The semiconductor device according to claim 11 , wherein the resistance between one of the field plates and the source electrode is 55 kΩ or more to 260 kΩ or less.