Optoelectronic semiconductor component and 3D printer

1. An optoelectronic semiconductor component comprising:

a carrier;

a plurality of individually controllable pixels; and

a plurality of transport channels configured to transport gas or liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component,

wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material, and

wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less.

2. The optoelectronic semiconductor component according to claim 1 , wherein all pixels comprise the same layer sequence.

3. The optoelectronic semiconductor component according to claim 1 , wherein all pixels are configured to emit radiation of the same wavelength.

4. The optoelectronic semiconductor component according to claim 1 , wherein adjacent pixels are separated from one another by a trench.

5. The optoelectronic semiconductor component according to claim 1 ,

wherein a semiconductor layer sequence comprises AlInGaN, and

wherein the wavelength of maximum intensity is in a range of 365 nm to 470 nm.

6. The optoelectronic semiconductor component according to claim 1 , further comprising barriers, which are impermeable to the radiation and which are arranged between adjacent pixels to optically isolate the pixels from one another.

7. The optoelectronic semiconductor component according to claim 6 , wherein the barriers project beyond the pixels.

8. The optoelectronic semiconductor component according to claim 1 , further comprising a coating, which is impermeable to the radiation, and which is located at side walls of the pixels.

9. The optoelectronic semiconductor component according to claim 8 , wherein the coating is reflective.

10. The optoelectronic semiconductor component according to claim 8 , wherein the coating has an absorbing effect for radiation generated in the pixels.

11. The optoelectronic semiconductor component according to claim 1 , wherein the pixels taper in a direction away from the carrier.

12. The optoelectronic semiconductor component according to claim 1 , wherein upper sides of the pixels facing away from the carrier are designed as converging lenses.

13. The optoelectronic semiconductor component according to claim 1 , wherein the pixels are free of phosphor.

14. The optoelectronic semiconductor component according to claim 1 , wherein the carrier is formed from a semiconductor material and comprises drive transistors for the pixels.

15. The optoelectronic semiconductor component according to claim 14 , wherein the pixels are located in a plane lying closer to the radiation exit side than the drive transistors.

16. The optoelectronic semiconductor component according to claim 1 , wherein the pixels, taken together and in plan view, have an areal proportion of at least 25% and at most 75% of the radiation exit side.

17. The optoelectronic semiconductor component according to claim 1 , wherein the pixels have an average edge length of between 2 μm and 200 μm inclusive.

18. The optoelectronic semiconductor component according to claim 1 , wherein the pixels have an active zone which is penetrated by electrical feedthroughs so that upper sides of the pixels facing away from the carrier are free of electrodes for energizing the pixels.

19. An optoelectronic semiconductor component comprising:

a carrier; and

a plurality of individually controllable pixels,

wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material,

wherein all pixels emit radiation of the same wavelength out of the optoelectronic semiconductor component, and

wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 380 nm or less.