Light-emitting device with semiconductor stack and reflective layer on semiconductor stack
A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.
1. A light-emitting device, comprising:
a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer comprises a first edge;
a reflective structure located on the second semiconductor layer and comprising an outer edge;
a first electrode pad located on the reflective structure, wherein the first electrode pad comprising an outer side wall adjacent to the outer edge,
wherein the outer edge of the reflective structure extends beyond the outer side wall of the first electrode pad and does not exceed and coincide with the first edge of the second semiconductor layer, and the outer edge of the reflective structure is between the outer side wall of the first electrode pad and the first edge of the second semiconductor layer in a cross-sectional view of the light-emitting device.
2. The light-emitting device of claim 1 , wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm.
3. The light-emitting device of claim 1 , further comprising a transparent conductive layer located between the semiconductor structure and the reflective layer.
4. The light-emitting device of claim 2 , wherein the transparent conductive layer comprises a first outer edge closer to the first edge than the outer edge and not exceeding the first edge.
5. The light-emitting device of claim 3 , further comprising a first insulating structure located on the second semiconductor layer, wherein the transparent conductive layer covers a part of the first insulating structure.
6. The light-emitting device of claim 3 , further comprising a first insulating structure located on the second semiconductor layer and the transparent conductive layer, wherein the first insulating structure comprises an opening on the second semiconductor layer.
7. The light-emitting device of claim 1 , further comprising a first insulating structure located on the second semiconductor layer, wherein the reflective structure covers a part of the first insulating structure.
8. The light-emitting device of claim 1 , further comprising a first insulating structure located between the second semiconductor layer and the reflective structure, wherein the semiconductor structure comprises an outside wall and the first insulating structure covers the outside wall.
9. The light-emitting device of claim 8 , further comprising a second insulating structure covering the reflective structure.
10. The light-emitting device of claim 9 , further comprising a first contact part and a second contact part on the second insulating structure, wherein the first contact part electrically connects to the first semiconductor layer and the second contact part electrically connects to the second semiconductor layer.
11. The light-emitting device of claim 10 , further comprising a third insulating structure on the first contact part and the second contact part.
12. The light-emitting device of claim 10 , wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer in a top-view of the light-emitting device.
13. The light-emitting device of claim 10 , wherein the second contact part is surrounded by the first contact part in a top-view of the light-emitting device.
14. The light-emitting device of claim 1 , wherein the reflective structure comprises a reflective layer and a barrier layer covering the reflective layer.
15. The light-emitting device of claim 14 , wherein the barrier layer surrounds the reflective layer.
16. The light-emitting device of claim 14 , further comprising a first insulating structure located on the second semiconductor layer, wherein the barrier layer covers a part of the first insulating structure.
17. The light-emitting device of claim 14 , wherein the barrier layer comprises the outer edge, and a distance between the first edge and the outer edge is greater than 2 μm and is not greater than 8 μm.
18. The light-emitting device of claim 1 , further comprising a via passing through the second semiconductor layer and the active layer to expose the first semiconductor layer.
19. The light-emitting device of claim 18 , further comprising a first insulating structure located on the second semiconductor layer and extends into the via to contact the first semiconductor layer.
20. The light-emitting device of claim 1 , further comprising a second electrode pad located on the reflective structure, wherein one of the first electrode pad and the second electrode pad electrically connects to the first semiconductor layer; and the other one of the first electrode pad and the second electrode pad electrically connects to the second semiconductor layer.