3D semiconductor device and structure
A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the third layer includes crystalline silicon, and where the second level includes at least one phase-lock-loop (“PLL”) circuit.
1. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said third layer comprises crystalline silicon, and
wherein said second level comprises at least one phase lock-loop (“PLL”) circuit.
2. The device according to claim 1 ,
wherein said second level comprises electronic circuits and at least one test circuit, and
wherein said at least one test circuit is capable to perform testing of at least one of said electronic circuits.
3. The device according to claim 1 ,
wherein said first level comprises a first die area,
wherein said second level comprises a second die area, and
wherein said first die area is at least 10% greater than said second die area.
4. The device according to claim 1 ,
wherein said second level comprises at least one charge trap circuit.
5. The device according to claim 1 ,
wherein said second level comprises at least one power regulator circuit.
6. The device according to claim 1 ,
wherein said second level comprises at least one memory array,
wherein said first level comprises at least one control circuit, and
wherein said at least one control circuit controls read operations of said at least one memory array.
7. The device according to claim 1 ,
wherein said second level comprises at least one electrostatic-discharge (“ESD”) circuit.
8. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections;
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said third layer comprises crystalline silicon,
wherein said first level comprises a first data bus,
wherein said second level comprises a second data bus,
wherein said metal to metal bond regions comprise connections between said first data bus and said second data bus,
wherein said first level comprises a first die area,
wherein said second level comprises a second die area, and
wherein said first die area is at least 10% greater than said second die area.
9. The device according to claim 8 ,
wherein said second level comprises at least one array of memory cells,
wherein said memory cells are volatile type memory cells, and
wherein each of said memory cells are a single transistor memory cell.
10. The device according to claim 8 ,
wherein said second level comprises at least one phase lock-loop (“PLL”) circuit.
11. The device according to claim 8 ,
wherein said second level comprises at least one charge trap circuit.
12. The device according to claim 8 ,
wherein said second level comprises at least one power regulator circuit.
13. The device according to claim 8 ,
wherein said second level comprises at least one electrostatic-discharge (“ESD”) circuit.
14. The device according to claim 8 ,
wherein at least one of said second transistors is a FinFET type transistor.
15. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said second level comprises at least one memory array,
wherein said third layer comprises crystalline silicon,
wherein said first layer comprises a first atom type,
wherein said third layer comprises a second atom type, and
wherein said first atom type is different from said second atom type.
16. The device according to claim 15 , further comprising:
a heat removal path from said third level to an external surface of said device.
17. The device according to claim 15 ,
wherein said second level comprises at least one SerDes circuit.
18. The device according to claim 15 ,
wherein said second layer comprises radio frequency (“RF”) type circuits.
19. The device according to claim 15 ,
wherein said second level comprises at least one electrostatic-discharge (“ESD”) circuit.
20. The device according to claim 15 ,
wherein said second level comprises at least one power regulator circuit.