Acoustic wave device and forming method thereof
An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.
1. An acoustic wave element, comprising:
a substrate;
a bonding structure on the substrate;
a support layer on the bonding structure;
a first electrode comprising a lower surface on the support layer,
a cavity positioned between the support layer and the first electrode and exposing the lower surface of the first electrode;
a piezoelectric layer on the first electrode; and
a second electrode on the piezoelectric layer;
wherein at least one of the first electrode and the second electrode comprises a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance and the second electrical impedance is lower than the first electrical impedance.
2. The acoustic wave element according to claim 1 , wherein the piezoelectric layer is an epitaxial layer.
3. The acoustic wave element according to claim 1 , wherein the piezoelectric layer is a polycrystalline layer.
4. The acoustic wave element according to claim 1 , wherein the first layer is adjacent to the piezoelectric layer and the second electrode layer is remote from the piezoelectric layer.
5. The acoustic wave element according to claim 1 , wherein the material of the first layer comprises iridium, molybdenum, platinum, rubidium, tungsten, titanium tungsten alloy, or a combination thereof.
6. The acoustic wave element according to claim 1 , wherein the material of the second layer comprises gold, silver, copper, aluminum or the combination thereof.
7. The acoustic wave element according to claim 1 , wherein each of the first electrode and the second electrode comprises the first layer and the second layer.
8. The acoustic wave element according to claim 1 , wherein there is no additional material between the lower surface of the first electrode and the cavity.