High-power laser packaging utilizing carbon nanotubes between metallic bonding materials

1. A wavelength beam combining laser system comprising:

a beam emitter configured to simultaneously emit a plurality of discrete beams and having first and second opposed surfaces;

focusing optics for focusing the plurality of beams onto a dispersive element;

the dispersive element for receiving and dispersing the received focused beams;

a partially reflective output coupler positioned to receive the dispersed beams, transmit a portion of the dispersed beams therethrough as a multi-wavelength output beam, and reflect a second portion of the dispersed beams back toward the dispersive element;

a first electrode mount disposed proximate the first surface of the beam emitter; and

a thermal bonding layer disposed between the beam emitter and first electrode mount, the thermal bonding layer improving thermal conduction between the beam emitter and the first electrode mount,

wherein the thermal bonding layer comprises (i) a first layer of a first metallic bonding material, the first layer being in direct contact with the beam emitter and comprising at least one of In, Sn, AuSn, or InSn, (ii) a second layer of a second metallic bonding material being in direct contact with the first electrode mount, and (iii) disposed between and in direct contact with the first and second layers, a third layer comprising an array of carbon nanotubes embedded within a matrix material, the matrix material being in direct contact with the first and second layers and comprising at least one of In, Sn, Au, Ag, Zn, Pb, AuSn, or InSn.

2. The laser system of claim 1 , wherein the dispersive element comprises a diffraction grating.

3. The laser system of claim 1 , further comprising an optical fiber configured to receive the multi-wavelength output beam.

4. The laser system of claim 1 , wherein the thermal bonding layer consists of the first layer, the second layer, and the third layer.

5. The laser system of claim 1 , wherein the matrix material consists of at least one of In, Sn, Au, Ag, Zn, Pb, AuSn, or InSn.

6. The laser system of claim 1 , wherein the matrix material consists of at least one of In, Sn, AuSn, or InSn.

7. The laser system of claim 1 , wherein the second layer comprises at least one of In, Sn, AuSn, or InSn.

8. The laser system of claim 1 , wherein the second layer consists of at least one of In, Sn, AuSn, or InSn.

9. The laser system of claim 1 , wherein the first layer consists of at least one of In, Sn, AuSn, or InSn.

10. The laser system of claim 1 , wherein at least some of the carbon nanotubes within the array of carbon nanotubes are aligned substantially perpendicular to the first surface of the beam emitter.

11. The laser system of claim 1 , wherein the beam emitter comprises a diode bar.

12. The laser system of claim 1 , wherein the first metallic bonding material and the second metallic bonding material comprise different materials.

13. The laser system of claim 1 , wherein the third layer consists of the array of carbon nanotubes embedded within the matrix material.

14. The laser system of claim 13 , wherein the matrix material consists of at least one of In, Sn, Au, Ag, Zn, Pb, AuSn, or InSn.

15. The laser system of claim 1 , wherein a top surface of the thermal bonding layer contacts the beam emitter and a bottom surface of the thermal bonding layer contacts the first electrode mount, further comprising a third metallic bonding material disposed on at least a portion of a lateral surface of the thermal bonding layer that spans the top and bottom surfaces.

16. The laser system of claim 15 , wherein the third metallic bonding material comprises at least one of In, Sn, AuSn, or InSn.

17. The laser system of claim 1 , further comprising:

a second electrode mount (i) disposed over and in thermal contact with the second surface of the beam emitter and (ii) electrically insulated from the first electrode mount except for any conductive path through the beam emitter; and

a second thermal bonding layer disposed between the beam emitter and second electrode mount, the second thermal bonding layer improving thermal conduction between the beam emitter and the second electrode mount,

wherein the second thermal bonding layer comprises (i) a second array of carbon nanotubes, (ii) a third metallic bonding material disposed between the array of second carbon nanotubes and the beam emitter, and (iii) a fourth metallic bonding material disposed between the second array of carbon nanotubes and the second electrode mount.

18. The laser system of claim 17 , wherein at least one of the third metallic bonding material or the fourth metallic bonding material comprises at least one of In, Sn, AuSn, or InSn.

19. The laser system of claim 17 , wherein at least some of the carbon nanotubes within the second array of carbon nanotubes are aligned substantially perpendicular to the second surface of the beam emitter.

20. The laser system of claim 17 , wherein the third metallic bonding material and the fourth metallic bonding material comprise different materials.