Data storage device channel encoding current data using redundancy bits generated over preceding data
A data storage device is disclosed comprising a non-volatile storage medium (NVSM). A first block of data is channel encoded into first channel data based on a channel code constraint, and the first channel data is error correction encoded to generate first redundancy bits. A second block of data is channel encoded into second channel data based on the channel code constraint and the first redundancy bits, and the first channel data and the second channel data are error correction encode to generate second redundancy bits. A third block of data is channel encoded into third channel data based on the channel code constraint and the second redundancy bits. The first, second and third channel data and the first and second redundancy bits are stored in the NVSM.
1. A data storage device comprising:
a non-volatile storage medium (NVSM); and
control circuitry configured to:
channel encode a first block of first input data into first channel data based on a channel code constraint;
error correction encode the first channel data to generate first redundancy bits;
channel encode a second block of second input data into second channel data based on the channel code constraint and the first redundancy bits, the second channel data comprising the first redundancy bits;
error correction encode the first channel data and the second channel data to generate second redundancy bits;
channel encode a third block of third input data into third channel data based on the channel code constraint and the second redundancy bits, the third channel data comprising the second redundancy bits; and
store the first, second and third channel data and the first and second redundancy bits in the NVSM.
2. The data storage device as recited in claim 1 , wherein the first redundancy bits are distributed across the second channel data.
3. The data storage device as recited in claim 1 , wherein the control circuitry is further configured to:
read the first and second channel data and the first redundancy bits from the NVSM to generate read data;
error correction decode the read data to generate corrected data;
extract the first redundancy bits from the corrected data; and
channel decode the corrected data into the second block of second input data based on the extracted first redundancy bits.
4. The data storage device as recited in claim 1 , wherein the channel code constraint is a maximum transition run (MTR) code constraint.
5. The data storage device as recited in claim 1 , wherein the first and second redundancy bits are generated based on a low density parity check (LDPC) code.
6. The data storage device as recited in claim 1 , wherein the control circuitry is further configured to:
channel encode a fourth block of fourth input data into fourth channel data based on the channel code constraint; and
generate third redundancy bits over the first channel data and the fourth channel data.
7. The data storage device as recited in claim 6 , wherein the second channel data comprises the third redundancy bits.
8. A data storage device comprising:
a non-volatile storage medium (NVSM); and
control circuitry configured to:
generate first low density parity check (LDPC) parity over first input data;
generate the first input data as first channel data encoded based on a channel code constraint;
generate second LDPC parity over the first input data and over second input data, wherein the first and second input data and the first and second LDPC parity form at least part of an LDPC codeword;
generate the second input data as second channel data encoded based on the channel code constraint and the first LDPC parity; and
store the LDPC codeword in the NVSM.
9. The data storage device as recited in claim 8 , wherein the second channel data comprises the first LDPC parity.
10. The data storage device as recited in claim 9 , wherein the first LDPC parity is distributed across the second channel data.
11. The data storage device as recited in claim 8 , wherein the control circuitry is further configured to:
read the LDPC codeword from the NVSM to generate read data;
error correction decode the read data to generate corrected data;
extract the first LDPC parity from the corrected data; and
channel decode the corrected data based on the extracted first LDPC parity.
12. The data storage device as recited in claim 8 , wherein the channel code constraint is a maximum transition run (MTR) code constraint.
13. The data storage device as recited in claim 8 , wherein the control circuitry is further configured to:
generate third channel data based on the channel code constraint; and
generate parity bits over the first channel data and the third channel data.
14. The data storage device as recited in claim 13 , wherein the second channel data comprises the parity bits.
15. The data storage device as recited in claim 13 , wherein the parity bits are distributed across the second channel data.
16. A data storage device comprising:
a non-volatile storage medium (NVSM); and
a means for generating first low density parity check (LDPC) parity over first input data;
a means for generating the first input data as first channel data encoded based on a channel code constraint;
a means for generating second LDPC parity over the first input data and over second input data, wherein the first and second input data and the first and second LDPC parity form at least part of an LDPC codeword;
a means for generating the second input data as second channel data encoded based on the channel code constraint and the first LDPC parity; and
a means for storing the LDPC codeword in the NVSM.
17. Control circuitry configured to access a non-volatile storage medium (NVSM), the control circuitry configured to:
channel encode a first block of first input data into first channel data based on a channel code constraint;
error correction encode the first channel data to generate first redundancy bits;
channel encode a second block of second input data into second channel data based on the channel code constraint and the first redundancy bits, the second block of second channel data comprising the first redundancy bits;
error correction encode the first channel data and the second channel data to generate second redundancy bits;
channel encode a third block of third input data into third channel data based on the channel code constraint and the second redundancy bits, the third channel data comprising the second redundancy bits; and
store the first, second and third channel data and the first and second redundancy bits in the NVSM.
18. The control circuitry as recited in claim 17 , wherein the first redundancy bits are distributed across the second channel data.
19. The control circuitry as recited in claim 17 , wherein the control circuitry is further configured to:
read the first and second channel data and the first redundancy bits from the NVSM to generate read data;
error correction decode the read data to generate corrected data;
extract the first redundancy bits from the corrected data; and
channel decode the corrected data into the second block of second input data based on the extracted first redundancy bits.
20. The control circuitry as recited in claim 17 , wherein the channel code constraint is a maximum transition run (MTR) code constraint.
21. The control circuitry as recited in claim 17 , wherein the first and second redundancy bits are generated based on a low density parity check (LDPC) code.
22. The control circuitry as recited in claim 17 , wherein the control circuitry is further configured to:
channel encode a fourth block of fourth input data into fourth channel data based on the channel code constraint; and
generate third redundancy bits over the first channel data and the fourth channel data.
23. The control circuitry as recited in claim 22 , wherein the second channel data comprises the third redundancy bits.
24. The control circuitry as recited in claim 22 , wherein the third redundancy bits consist of parity bits generated over the first channel data and the fourth channel data.