Thin film comprising titanium oxide, and method of producing thin film comprising titanium oxide
A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.
1. A sputtering target for producing a thin film, comprising:
a sintered structure containing Ti, Ag and O as its constituent elements and having a composition of (TiO 2-m ) 1-n ,Ag n , where m and n satisfy the equations 0≤m≤0.5 and 0.0001≤n≤0.1;
said sintered structure having a specific resistance of 10 Ωcm or less; and
said sintered structure having a matrix phase of titanium oxide and an Ag phase dispersed as particles within said matrix phase;
wherein an average grain size of said Ag phase particles existing in said sintered structure is 15 μm or less.
2. The sputtering target according to claim 1 , wherein the average grain size of said Ag phase particles existing in said sintered structure is 1.5 μm or more and 15 μm or less.
3. The sputtering target according to claim 1 , wherein the sputtering target is adapted to produce an interference or protective thin film for an optical information recording medium.
4. A sputtering target for producing a thin film, comprising:
a sintered structure containing Ti, Ag and O as its constituent elements and having a composition of (TiO 2-m ) 1-n Ag n , where m and n satisfy the equations 0≤m≤0.5 and 0.01≤n≤0.1;
said sintered structure having a specific resistance of 10 Ωcm or less; and
said sintered structure having a matrix phase of titanium oxide and an Ag phase dispersed as particles within said matrix phase;
wherein an average grain size of said Ag phase particles existing in said sintered structure is 15 μm or less.
5. The sputtering target according to claim 4 , wherein the average grain size of said Ag phase particles existing in said sintered structure is 1.5 μm or more and 15 μm or less.
6. The sputtering target according to claim 4 , wherein the sputtering target is adapted to produce an interference or protective thin film for an optical information recording medium.