Semiconductor devices, hybrid transistors, and related methods
Methods of forming a semiconductor device are disclosed. A method comprising forming a hybrid transistor supported by a substrate. Forming the hybrid transistor comprises forming a source including a first low bandgap high mobility material, and forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material. Forming the hybrid transistor further comprises forming a drain including a second low bandgap high mobility material coupled with the a high bandgap low mobility material, and forming a gate separated from the channel via a gate oxide material. Methods of forming a transistor are also disclosed.
1. A method of forming a semiconductor device, the method comprising:
forming a hybrid transistor supported by a substrate comprising:
forming a source including a first low bandgap high mobility material;
forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material;
forming a drain including a second low bandgap high mobility material coupled with the high bandgap low mobility material; and
forming a gate separated from the channel via a gate oxide material,
wherein forming the channel includes forming the high bandgap low mobility material to have a length that is shorter than a length of the gate.
2. The method of claim 1 , wherein forming the hybrid transistor supported by the substrate includes forming a vertically configured transistor including forming the source, the channel, and the drain stacked on the substrate in a vertical orientation.
3. The method of claim 1 , wherein forming the hybrid transistor supported by the substrate includes forming a horizontally configured transistor including forming the source, the channel, and the drain on the substrate in a horizontal orientation.
4. The method of claim 1 , wherein the first low bandgap high mobility material is a first doped semiconductor material, the second low bandgap high mobility material is a second doped semiconductor material, and the high bandgap low mobility material is an oxide semiconductor material.
5. The method of claim 4 , wherein the gate oxide material includes SiO2, a high-K material, or a combination thereof.
6. A method of forming a transistor, the method comprising:
forming a source region including at least a first low bandgap high mobility material;
forming a channel region including at least a high bandgap low mobility material adjacent the first low bandgap high mobility material; and
forming a drain region including at least a second low bandgap high mobility material adjacent the high bandgap low mobility material,
wherein forming the channel region further comprises forming the channel region including a third low bandgap high mobility material.
7. The method of claim 6 , further comprising forming a gate electrode isolated from the channel region via a gate oxide material comprising SiO2, a high-K material, or a combination thereof.
8. The method of claim 7 , wherein forming the channel region includes forming the high bandgap low mobility material having a length that is shorter than a length of the gate electrode.
9. The method of claim 7 , wherein forming the gate electrode comprises forming one of a single gate electrode and a dual gate electrode.
10. The method of claim 6 , wherein:
forming the source region including at least the first low bandgap high mobility material comprises forming the source region including a first doped semiconductor material;
forming the drain region including at least the second low bandgap high mobility material comprises forming the drain region including a second doped semiconductor material; and
forming the channel region including at least the high bandgap low mobility material comprises forming the channel region including an oxide semiconductor material.
11. The method of claim 6 , wherein each of the first low bandgap high mobility material and the second low bandgap high mobility material comprise a doped semiconductor material and the high bandgap low mobility material comprises an oxide semiconductor material.
12. The method of claim 6 , wherein forming the channel region comprises forming the channel region such that the high bandgap low mobility material tapers from the source region to the drain region.
13. A method of forming a semiconductor device, the method comprising:
forming a transistor comprising:
forming a source including at least a first low bandgap high mobility material;
forming a channel including another low bandgap high mobility material disposed between opposing portions of a high bandgap low mobility material and coupled to the first low bandgap high mobility material; and
forming a drain including at least a second low bandgap high mobility material coupled to a portion of high bandgap low mobility material.
14. The method of claim 13 , further comprising forming a gate electrode isolated from the channel via an insulative material.
15. The method of claim 14 , wherein forming the channel includes forming the high bandgap low mobility material to have a length that is shorter than a length of the gate electrode.
16. The method of claim 13 , wherein forming the transistor comprises forming the source, the channel, and the drain stacked on a substrate in a vertical orientation.
17. The method of claim 13 , wherein forming the transistor comprises forming the source, the channel, and the drain on a substrate in a horizontal orientation.
18. The method of claim 13 , wherein:
forming the source including the first low bandgap high mobility material comprises forming the source including a first doped semiconductor material; and
forming the drain including the second low bandgap high mobility material comprises forming the drain including the first doped semiconductor material.