Memory device with temperature information controller and operating method of the memory device
A storage device including: a peripheral circuit configured to perform a plurality of internal operations corresponding to a plurality of internal operation commands input from the memory controller, a temperature information controller configured to generate a first temperature code corresponding to an internal temperature at a time at which an internal operation corresponding to a first internal operation command among the plurality of internal operation commands is performed and temperature code generation information representing information that the first temperature code has been generated during a set period and a operation controller configured to control the peripheral circuit to perform an internal operation corresponding to a second internal operation command input after the first internal operation command among the plurality of internal operation commands is input, based on the first temperature code and the temperature code generation information, in response to the second internal operation command.
1. A method for operating a memory device comprising a first memory chip and a second memory chip, the method comprising:
receiving, by the first memory chip, a first internal command input from a memory controller;
generating, by the first memory chip, a first temperature code corresponding to the first internal command, wherein the first temperature code indicates an internal temperature when the first internal command is received from the memory controller;
receiving, by the second memory chip, a second internal command input from the memory controller during a predetermined period from when the first temperature code is generated; and
performing, by the second memory chip, a second internal operation corresponding to the second internal command, using the first temperature code.
2. The method of claim 1 , further comprising generating, by the second memory chip, temperature code generation information indicating when the first temperature code was generated.
3. The method of claim 2 , wherein, in the generating of the temperature code generation information, the temperature code generation information is changed to a first state value when the first temperature code is generated.
4. The method of claim 3 , wherein the second internal operation is performed using the first temperature code when the temperature code generation information is the first state value.
5. The method of claim 3 , further comprising changing, by the first memory chip, the first state value of the temperature code generation information to a second state value when the predetermined period has elapsed from when the first temperature code is generated.
6. The method of claim 5 , further comprising generating, by the second memory chip, a second temperature code corresponding to the second internal command when the temperature code generation information is the second state value, wherein the second temperature code indicates an internal temperature when the second internal command is received from the memory controller.
7. The method of claim 6 , wherein the second internal operation is performed using the second temperature code.
8. A memory device comprising:
a first memory chip configured to receive a first internal command input from a memory controller, and store a first temperature code generated according to the first internal command and temperature code generation information representing information that the first temperature code has been generated during a predetermined period; and
a second memory chip configured to receive a second internal command input from the memory controller after the first internal command is input to the first memory chip, and perform an internal operation corresponding to the second internal command, based on the first temperature code and the temperature code generation information, which are stored on the first memory chip, in response to the second internal command.
9. The memory device of claim 8 , wherein a state value of the temperature code generation information is changed to a first state value when the first temperature code is generated.
10. The memory device of claim 9 , wherein the second memory chip performs the internal operation corresponding to the second internal command using the first temperature code when the state value of the temperature code generation information is the first state value.
11. The memory device of claim 9 , wherein the first state value is changed to a second state value when the predetermined period has elapsed from when the first temperature code is generated.
12. The memory device of claim 11 , wherein the second memory chip generates a second temperature code corresponding to the second internal command when the state value of the temperature code generation information is the second state value.
13. The memory device of claim 12 , wherein the second memory chip performs the internal operation using the second temperature code.
14. The memory device of claim 8 , wherein the internal operation is one of a read operation, a program operation, and an erase operation.