Blue-emitting nanocrystals with cubic shape and group IV metal fluoride passivation
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
1. A nanostructure comprising a nanocrystal core and at least one shell, wherein the shell is disposed on the core or on a previously deposited shell of a same or a different composition as the shell, and wherein at least one shell comprises at least one metal fluoride of formula (I):
MF 4 (I)
wherein:
M=Zr, Hf, or Ti.
2. The nanostructure of claim 1 , wherein the core comprises ZnSe or ZnSe 1-x Te x , wherein 0≤x≤1.
3. The nanostructure of claim 1 , wherein at least one shell comprises a ZnS shell, and the metal fluoride is located in the ZnS shell.
4. The nanostructure of claim 1 , wherein the at least one metal fluoride is HfF 4 or ZrF 4 .
5. The nanostructure of claim 1 , wherein the molar ratio of at least one metal fluoride to zinc in the nanostructure is from about 1:1 to about 1:8.
6. The nanostructure of claim 1 , wherein the nanostructure comprises:
(a) a core comprising ZnSe, at least one shell comprising ZnS, and at least one shell comprising HfF 4 ; or
(b) a core comprising ZnSe 1-x Te x , wherein 0≤x≤1, at least one shell comprising ZnSe, and at least one shell comprising ZnS, and at least one shell comprising HfF 4 .
7. The nanostructure of claim 1 , wherein the nanostructure is a quantum dot.
8. The nanostructure of claim 1 , wherein the nanostructure exhibits a photoluminescence quantum yield of between about 60% and about 100%.
9. The nanostructure of claim 1 , wherein the nanostructure exhibits a full width at half-maximum of between about 10 nm and about 40 nm.
10. A nanostructure composition comprising:
(a) the nanostructure of claim 1 ; and
(b) at least one organic resin.
11. An illumination device comprising:
(a) a first conductive layer;
(b) a second conductive layer; and
(c) an emitting layer disposed between the first conductive layer and the second conductive laver, wherein the emitting layer comprises at least one population of nanostructures comprising a core and at least one shell, wherein at least one shell comprises a Group IV metal fluoride.
12. The illumination device of claim 11 , wherein the core of the nanostructures comprises ZnSe or ZnSe 1-x Te x , wherein 0≤x<1.
13. The illumination device of claim 11 , further comprising a semiconductor polymer layer.
14. The illumination device of claim 13 , wherein the semiconductor polymer layer comprises poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT/PSS).
15. The illumination device of claim 11 , further comprising a first transport layer.
16. The illumination device of claim 15 , wherein the first transport layer comprises N,N′-di(naphthalen-1-yl)-N,N′-bis(4-vinylphenyl)-4,4′-diamine.