Light emitting diode devices
Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 μm to 100 μm and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 μm to 10 μm.
1. A light emitting diode (LED) device comprising:
a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, the semiconductor layers including an N-type layer, an active region, and a P-type layer, each of the mesas having a height less than or equal to their width;
an N-contact material in a space between each of the mesas, the N-contact material providing optical isolation between each of the mesas, and electrically contacting the N-type layer of each of the mesas along sidewalls of the N-type layers;
a dielectric material which insulates sidewalls of the P-type layer and the active region from the N-contact material; and
each of the mesas comprising a conductive p-contact layer extending across a first portion of each of the mesas and including an edge, inner spacers between the conductive p-contact layer and the dielectric material extending across a remaining portion of each of the mesas on a portion the P-type layer, and the space between each of the mesas results in a pixel pitch in a range of from 10 μm to 100 μm and a dark space gap between adjacent edges of the conductive p-contact layer of less than 20% of the pixel pitch.
2. The LED device of claim 1 , wherein the conductive p-contact layer comprises a reflective metal.
3. The LED device of claim 1 , wherein the pixel pitch is in a range of from 40 μm to 100 μm.
4. The LED device of claim 1 , wherein the dark space gap between adjacent edges of the conductive p-contact layer of less than 10% of the pixel pitch.
5. The LED device of claim 1 , wherein the semiconductor layers are epitaxial semiconductor layers having a thickness in a range of from 2 μm to 10 μm.
6. The LED device of claim 1 , wherein the dielectric material is in a form of outer spacers comprising a material selected from the group consisting of SiO2, AlOx, and SiN, having a thickness in a range of from 200 nm to 1 μm.
7. The LED device of claim 1 , wherein the N-contact material has a depth from a top surface of the mesas in a range of from 0.5 μm to 2 μm.
8. The LED device of claim 1 , wherein each of the mesas includes sidewalls of the semiconductor layers, each having a first segment and a second segment, wherein the first segments of the sidewalls define an angle in a range of from 60 degrees to 90 degrees from a horizontal plane that is parallel with the N-type layer and the P-type layer, the second segments of the sidewalls form an angle with a top surface of a substrate upon which the mesas are formed in a range of from 75 to less than 90 degrees.
9. The LED device of claim 1 , wherein the inner spacers are adjacent to sidewalls of an opening of a hard mask layer.
10. A light emitting diode (LED) device comprising:
a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, the semiconductor layers including an N-type layer, an active region, and a P-type layer, each of the mesas having a height less than or equal to their width;
an N-contact material in a space between each of the mesas, the N-contact material providing optical isolation between each of the mesas, and electrically contacting the N-type layer of each of the mesas along sidewalls of the N-type layers;
a dielectric material which insulates sidewalls of the P-type layer and the active region from the N-contact material; and
each of the mesas comprising a conductive p-contact layer extending across a first portion of each of the mesas and including an edge, inner spacers between the conductive p-contact layer and the dielectric material extending across a remaining portion of each of the mesas on a portion of the P-type layer, and the space between each of the mesas results in a pixel pitch in a range of from 10 μm to 100 μm and a dark space gap between adjacent edges of the conductive p-contact layer in a range of from 4 μm to 10 μm.
11. The LED device of claim 10 , wherein the conductive p-contact layer comprises a reflective metal.
12. The LED device of claim 10 , wherein the plurality of mesas comprises an array of mesas.
13. The LED device of claim 10 , wherein the dark space gap is in a range of from 4 μm and to 8 μm.
14. The LED device of claim 10 , wherein the pixel pitch is in a range of from 40 μm to 100 μm.
15. The LED device of claim 10 , wherein the inner spacers are adjacent to sidewalls of an opening of a hard mask layer.
16. A method of manufacturing a light emitting diode (LED) device comprising:
depositing a plurality of semiconductor layers including an N-type layer, an active region, and a P-type layer on a substrate;
depositing a conductive p-contact layer on the plurality of semiconductor layers and a hard mask layer on the conductive p-contact layer;
etching a portion of the conductive p-contact layer and the hard mask layer to form openings;
depositing inner spacer material in the openings to form inner spacers on sidewalls of conductive p-contact layer and the hard mask layer;
etching a portion of the semiconductor layers to form trenches and plurality of mesas defining pixels, each of the mesas comprising the semiconductor layers and each of the mesas having a height less than or equal to their width;
depositing a dielectric material in the trenches; and
depositing an N-contact material in a space between each of the mesas, the N-contact material providing optical isolation between each of the mesas, and electrically contacting the N-type layer of each of the mesas along sidewalls of the N-type layers, wherein the dielectric material insulates sidewalls of the P-type layer and the active region from the N-contact material;
each of the mesas comprising the conductive p-contact layer extending across a first portion of each of the mesas and including an edge, inner spacers between the conductive p-contact layer and the dielectric material extending across a remaining portion of each of the mesas on a portion the P-type layer, and the space between each of the mesas results in a pixel pitch in a range of from 1 μm to 100 μm and a dark space gap between adjacent edges of the conductive p-contact layer.
17. The method of claim 16 , wherein the dark space gap between adjacent edges of the conductive p-contact layer is less than 20% of the pixel pitch.
18. The method of claim 16 , wherein the dark space gap in a range of from 4 μm to 10 μm.
19. The method of claim 16 , further comprising forming an array of mesas.
20. The method of claim 16 , wherein the conductive p-contact layer comprises a reflective metal.
21. The method of claim 16 , wherein the pixel pitch is in a range of from 40 μm to 100 μm.
22. The method of claim 16 , wherein the semiconductor layers have a thickness in a range of from 2 μm to 10 μm.