Quantum dot device and quantum dots
Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
1. An electroluminescent device, comprising
a first electrode and a second electrode facing each other,
an emission layer disposed between the first electrode and the second electrode, the emission layer comprising quantum dots, and
wherein the quantum dots comprise
a first semiconductor nanocrystal comprising a zinc chalcogenide, and
a second semiconductor nanocrystal comprising zinc, sulfur, and selenium,
wherein the quantum dots do not comprise cadmium,
wherein the quantum dots are configured to emit blue light having a maximum photoluminescent peak wavelength in a range of greater than or equal to about 440 nanometers and a quantum yield of the quantum dots is greater than or equal to 60%,
wherein the quantum dots have an average value of solidity of greater than or equal to about 0.85, and
wherein the zinc chalcogenide comprises zinc, selenium, and tellurium.
2. The electroluminescent device of claim 1 , wherein the quantum dots have an average particle size of greater than about 12 nanometers.
3. The electroluminescent device of claim 1 , wherein the quantum dots have a core-shell structure having a core and a shell disposed on the core, and
wherein the core comprises the first semiconductor nanocrystal and the shell comprises the second semiconductor nanocrystal do not comprise manganese, copper, or a combination thereof.
4. The electroluminescent device of claim 1 , wherein the quantum dots have a mole ratio of tellurium with respect to selenium of greater than or equal to about 0.001:1 and less than or equal to about 0.05:1.
5. The electroluminescent device of claim 1 , wherein the quantum dots have a core-shell structure having a core and a shell disposed on the core, and
wherein the core comprises the first semiconductor nanocrystal and the shell comprises the second semiconductor nanocrystal.
6. The electroluminescent device of claim 5 , wherein the shell comprises a concentration gradient in a radial direction, and optionally wherein an amount of the sulfur increases toward a surface of the quantum dots.
7. The electroluminescent device of claim 5 , wherein the shell comprises
a first layer disposed on the core, and
an outer layer disposed on the first layer, and
wherein the first layer comprises a fourth semiconductor nanocrystal comprising zinc and selenium and
wherein the outer layer comprises a third semiconductor nanocrystal comprising zinc and sulfur.
8. The electroluminescent device of claim 7 , wherein the first semiconductor nanocrystal comprises ZnSe 1-x Te x , wherein, x is greater than 0 and less than or equal to about 0.05,
the fourth semiconductor nanocrystal comprises a ZnSe, and
the third semiconductor nanocrystal comprises a ZnS and does not comprises selenium.
9. The electroluminescent device of claim 7 , wherein an energy bandgap of the first semiconductor nanocrystal is less than an energy bandgap of the fourth semiconductor nanocrystal and the energy bandgap of the fourth semiconductor nanocrystal is less than an energy bandgap of the third semiconductor nanocrystal, or
wherein an energy bandgap of the fourth semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
10. The electroluminescent device of claim 5 , wherein a thickness of the shell is greater than or equal to about 4 nm.
11. The electroluminescent device of claim 1 , wherein in the quantum dots, a mole ratio of sulfur with respect to selenium is greater than or equal to about 0.7 and less than or equal to about 1.6.
12. The electroluminescent device of claim 1 , wherein the quantum dots have an average value of solidity of greater than or equal to about 0.89.
13. The electroluminescent device of claim 1 , wherein the electroluminescent device comprises a charge auxiliary layer between the first electrode and the quantum dot emission layer, between the second electrode and the quantum dot emission layer, or between the first electrode and the quantum dot emission layer and between the second electrode and the quantum dot emission layer.
14. Quantum dots comprising
a first semiconductor nanocrystal comprising a zinc chalcogenide; and
a second semiconductor nanocrystal comprising zinc, sulfur, and selenium,
wherein the quantum dots are configured to emit blue light having a maximum photoluminescent peak wavelength in a range of greater than or equal to about 440 nanometers and a quantum yield of the quantum dots is greater than or equal to 60%,
wherein the quantum dots have an average value of solidity of greater than or equal to about 0.85, and
wherein the zinc chalcogenide comprises zinc, selenium, and tellurium.
15. The quantum dots of claim 14 , wherein the quantum dots have a core-shell structure having a core and a shell disposed on the core, and
wherein the core comprises the first semiconductor nanocrystal and the shell comprises the second semiconductor nanocrystal.
16. The quantum dots of claim 15 , wherein a thickness of the shell is greater than or equal to about 4 nm.
17. The quantum dots of claim 15 , wherein the semiconductor nanocrystal shell comprises
a first layer disposed on the core and
an outer layer disposed on the first layer, and
wherein the first layer comprises a fourth semiconductor nanocrystal comprising zinc and selenium and
wherein the outer layer comprises a third semiconductor nanocrystal comprising zinc and sulfur.
18. The quantum dots of claim 17 , wherein an energy bandgap of the first semiconductor nanocrystal is less than an energy bandgap of the fourth semiconductor nanocrystal and the energy bandgap of the fourth semiconductor nanocrystal is less than an energy bandgap of the third semiconductor nanocrystal, or
wherein an energy bandgap of the fourth semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
19. The quantum dots of claim 14 , wherein the quantum dots have an average particle size of greater than or equal to about 12 nanometers, and wherein the quantum dots have an average value of solidity of greater than or equal to about 0.89.
20. A composition comprising
the quantum dots of claim 14 and
an organic solvent.
21. A method of producing quantum dots of claim 14 , which comprises:
obtaining a first semiconductor nanocrystal including zinc, selenium, and tellurium; reacting a zinc precursor in an organic solvent in the presence of the first semiconductor nanocrystal and the organic ligand with a non-metal precursor of a selenium precursor, a sulfur precursor, or a combination thereof, a plurality of times, to form the second semiconductor nanocrystal, at a temperature of greater than 320° C., and
wherein the non-metal precursors are intermittently injected at a predetermined amount divided from a desired total amount at least two times.