Methods of fabricating OLED panel with inorganic pixel encapsulating barrier
Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.
1. A device comprising a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed over the PDL structures, the inorganic overhang structures comprise:
an upper portion of a non-conductive inorganic material and a lower portion of a conductive inorganic material;
the upper portion of the conductive inorganic material and the lower portion of the conductive inorganic material;
the upper portion of the non-conductive inorganic material, the lower portion of the non-conductive inorganic material, and an assistant cathode disposed under the lower portion; or
the upper portion of the conductive inorganic material, the lower portion of the non-conductive inorganic material, and the assistant cathode disposed under the lower portion,
wherein the non-conductive inorganic material comprises an inorganic silicon-containing material and the conductive inorganic material comprises a metal-containing material, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed, on the anode, and a cathode disposed over the OLED material, wherein the device is made by a process comprising the steps of:
depositing the OLED material over a substrate, the OLED material disposed over the anode and is deposited after at least two adjacent inorganic overhang structures are formed, the upper portion having a bottom surface wider than a top surface of the lower portion and includes an underside edge extending past a sidewall of the lower portion;
depositing a cathode after at least two adjacent inorganic overhang structures are formed, the cathode disposed over the OLED material and extending under the at least two adjacent inorganic overhang structures adjacent to each sub-pixel; and
depositing an encapsulation layer disposed over the cathode, the encapsulation layer extending under at least a portion of the at least two adjacent inorganic overhang structures and along the sidewall of the inorganic overhang structures.
2. The device of claim 1 , wherein the cathode extends under the portion of the inorganic overhang structures and contacts one or more of the assistant cathode or part of the lower portion.
3. The device of claim 2 , wherein:
the OLED material is defined by an underside edge of the upper portion such that the OLED material does not contact the lower portion or the assistant cathode; and
the cathode is defined by the underside edge of the upper portion.
4. The device of claim 1 , wherein the substrate is a pre-patterned indium tin oxide (ITO) glass substrate.
5. The device of claim 1 , wherein the OLED material comprises a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).
6. The device of claim 1 , further comprising a global passivation layer disposed over the inorganic overhang structures and the encapsulation layer.
7. A method of forming a device, comprising:
providing a substrate having:
an anode,
adjacent pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and
inorganic overhang structures disposed over an upper surface of the PDL structures, each inorganic overhang structure having;
a lower portion disposed over a upper surface of a PDL structure of the PDL structures; and
a upper portion disposed over the lower portion, the upper portion including an underside edge extending past a sidewall of the lower portion, wherein a bottom surface of the upper portion is wider than a top surface of the lower portion, the bottom surface of the upper portion is planar to the top surface of the lower portion;
depositing an organic light-emitting diode (OLED) material disposed the anode after at least two adjacent inorganic overhang structures are formed, the OLED material having an OLED edge defined by the underside edge of the upper portion such that the OLED material does not contact the lower portion; and
depositing a cathode disposed over the OLED material after the at least two adjacent inorganic overhang structures are formed, the cathode having an cathode edge defined by the underside edge of the upper portion such that the extending under the upper portion and cathode contacts one or more of an assistant cathode disposed under the lower portion or part of the sidewall of the lower portion.
8. The method of claim 7 , further comprising disposing a global passivation layer over the inorganic overhang structures and an encapsulation layer.
9. The device of claim 1 , wherein a cathode material is different from a material of the upper portion.
10. The device of claim 1 , wherein the bottom surface of the upper portion is planar to the top surface of the lower portion.
11. The method of claim 7 , wherein a cathode material is different from a material of the upper portion.
12. The method of claim 7 , wherein the bottom surface of the upper portion is planar to the top surface of the lower portion.
13. A device comprising a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed over the PDL structures, the inorganic overhang structures comprise:
an upper portion of a non-conductive inorganic material and a lower portion of a conductive inorganic material;
the upper portion of the conductive inorganic material and the lower portion of the conductive inorganic material;
the upper portion of the non-conductive inorganic material, the lower portion of the non-conductive inorganic material, and an assistant cathode disposed under the lower portion; or
the upper portion of the conductive inorganic material, the lower portion of the non-conductive inorganic material, and the assistant cathode disposed under the lower portion,
each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed over the OLED material, wherein the device is made by a process comprising the steps of:
depositing the OLED material over a substrate, the OLED material disposed over the anode and is deposited after at least two adjacent inorganic overhang structures are formed, the upper portion having a bottom surface wider than a top surface of the lower portion and including an underside edge extending past a sidewall of the lower portion, the OLED material is defined by an underside edge of the upper portion such that the OLED material does not contact the lower portion or the assistant cathode; and
the cathode is defined by the underside edge of the upper portion;
depositing the cathode after at least two adjacent inorganic overhang structures are formed, the cathode disposed over the OLED material and extending under the at least two adjacent inorganic overhang structures adjacent to each sub-pixel such that the cathode contacts one or more of the assistant cathode or part of the lower portion; and
depositing an encapsulation layer disposed over the cathode, the encapsulation layer extending under at least a portion of the at least two adjacent inorganic overhang structures and along a sidewall of the inorganic overhang structures.
14. The device of claim 13 , wherein:
the non-conductive inorganic material comprises an inorganic silicon-containing material; and
the conductive inorganic material comprises a metal-containing material.
15. The device of claim 13 , wherein the substrate is a pre-patterned indium tin oxide (ITO) glass substrate.
16. The device of claim 13 , wherein the OLED material comprises a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).
17. The device of claim 13 , further comprising a global passivation layer disposed over the inorganic overhang structures and the encapsulation layer.
18. The device of claim 13 , wherein a cathode material is different from a material of the upper portion.
19. The device of claim 13 , wherein the bottom surface of the upper portion is planar to the top surface of the lower portion.