Integrating control circuits with light emissive circuits with dissimilar wafer sizes
In some examples, an article comprises a semiconductor including at least one integrated circuit, a μLED array on a first surface of the semiconductor, and a fill material disposed on a first edge of the semiconductor. The first edge of the μLED array or the semiconductor is oriented substantially perpendicular to the first surface of the semiconductor.
1. An article comprising:
a first semiconductor including at least one integrated circuit;
a first μLED array on a first surface of the first semiconductor;
a fill material disposed on a first edge of the first semiconductor and extending in a direction substantially perpendicular to the first surface of the first semiconductor to be also disposed on a first edge of the first μLED array, wherein the first edge of the first μLED array and the first edge of the first semiconductor are substantially co-planar and are oriented substantially perpendicularly to the first surface of the first semiconductor; and
a second semiconductor including at least one integrated circuit, wherein the fill material joins the first and second semiconductors.
2. The article of claim 1 , the article further comprising:
a second μLED array on a first surface of the second semiconductor,
wherein the first and second μLED arrays are configured to emit light of a different color from each other.
3. The article of claim 2 , wherein at least one of the first and second μLED arrays are configured to emit at least one of red light, green light, or blue light.
4. The article of claim 2 , wherein respective light emitting surfaces of the first and second μLED arrays are substantially co-planar.
5. The article of claim 2 , further comprising:
a third semiconductor including at least one integrated circuit; and
a third μLED array on a first surface of the third semiconductor,
wherein the fill material joins the second and third semiconductors,
wherein the third μLED array is configured to emit light of a different color from the first and second μLED arrays, and
wherein each of the first, second, and third semiconductors include at least one through substrate via.
6. The article of claim 1 , wherein the fill material comprises an oxide or a dielectric polymer.
7. The article of claim 1 , wherein the first semiconductor includes at least one through substrate via.
8. The article of claim 1 , wherein the first μLED array is formed in an inorganic semiconductor layer.
9. The article of claim 8 , wherein the inorganic semiconductor layer comprises an epitaxial layer or at least one of gallium nitride, gallium arsenide, indium gallium nitride, or indium gallium arsenide.
10. The article of claim 1 , wherein the at least one integrated circuit of the first semiconductor comprises a CMOS device driver integrated circuit (DDIC) or a bi-CMOS DDIC.
11. A method comprising:
attaching at least one semiconductor including at least one integrated circuit and a μLED array to a carrier wafer, wherein the carrier wafer has a diameter different than a diameter of the at least one semiconductor;
after attaching the at least one semiconductor to the carrier wafer, encapsulating the at least one semiconductor with a fill material;
forming at least one through substrate via in the at least one semiconductor, wherein the diameter of the carrier wafer is larger than the diameter of the at least one semiconductor; and
thinning and planarizing the at least one semiconductor and the fill material to a predetermined thickness, wherein the fill material comprises an oxide.
12. The method of claim 11 , wherein the μLED array comprises at least one of gallium nitride, gallium arsenide, indium gallium nitride, and indium gallium arsenide.
13. The method of claim 11 , wherein the at least one integrated circuit comprises a CMOS device driver integrated circuit (DDIC) or a bi-CMOS DDIC.
14. The method of claim 11 , wherein the predetermined thickness is about 150 microns.
15. The method of claim 11 , further comprising:
coating a thin protecting layer over exposed surfaces and/or sidewalls of the at least one semiconductor, the fill material, and the carrier wafer prior to forming the at least one through substrate via.
16. The method of claim 11 , wherein the diameter of the at least one semiconductor is 200 mm or less, and wherein the diameter of the carrier wafer is about 300 mm.
17. The method of claim 11 , wherein the at least one semiconductor comprises a first semiconductor including a first μLED array and a second semiconductor including a second μLED array, wherein the first and second μLED arrays are configured to emit light of a different color from each other in a final color arrangement.
18. The method of claim 17 , wherein respective light emitting surfaces of the first and second μLED arrays are configured to be co-planar upon attachment of the first and second semiconductors to the carrier wafer.
19. A method comprising:
attaching a first wafer to a carrier wafer, wherein the first wafer comprises a semiconductor comprising a plurality of μLED arrays on a plurality of corresponding integrated circuits, wherein the carrier wafer has a diameter different than a diameter of the first wafer;
after attaching the first wafer to the carrier wafer, encapsulating the first wafer with a fill material;
forming at least one through substrate via in a substrate of at least one of the plurality of integrated circuits; and
thinning and planarizing the semiconductor and the fill material to a predetermined thickness.