Bottom electrode material stack for micromachined ultrasonic transducer devices
An ultrasonic transducer device includes a bottom electrode layer of a transducer cavity disposed over a substrate. The bottom electrode layer includes a bottom layer of a first type metal; a top layer of the first type metal; a second type metal disposed between the bottom layer and the top layer; and at least one intermediate layer of the first type metal disposed between the bottom layer and the top layer, the at least one intermediate layer configured so as to define at least two discrete layers of the second type metal.
1. An ultrasonic transducer device, comprising:
a bottom electrode layer of a transducer cavity disposed over a substrate, the bottom electrode further comprising:
a bottom layer of a first type metal;
a top layer of the first type metal;
a second type metal disposed between the bottom layer and the top layer;
at least one intermediate layer of the first type metal disposed between the bottom layer and the top layer, the at least one intermediate layer configured so as to separate at least two discrete layers of the second type metal; and
a bottom cavity layer formed on the bottom electrode layer, the bottom cavity layer including a chemical vapor deposition (CVD) SiO 2 layer and an atomic layer deposition (ALD) Al 2 O 3 layer formed on the SiO 2 layer.
2. The ultrasonic transducer device of claim 1 , wherein the first type metal comprises titanium nitride (TiN).
3. The ultrasonic transducer device of claim 2 , wherein the second type metal comprises titanium.
4. The ultrasonic transducer device of claim 1 , wherein the bottom layer, the top layer and the at least one intermediate layer have a thickness of about 10 nanometers (nm) to about 30 nm.
5. The ultrasonic transducer device of claim 1 , wherein the at least two discrete layers of the second type metal have a total thickness of about 10 nm to about 300 nm.
6. The ultrasonic transducer device of claim 1 , further comprising a membrane support layer formed over the bottom cavity layer, the membrane support layer having the transducer cavity defined therein.
7. The ultrasonic transducer device of claim 6 , further comprising a membrane bonded to the membrane support layer to seal the cavity.
8. A method of forming an ultrasonic transducer device, the method comprising:
forming a bottom layer of a first type metal over a substrate;
forming a second type metal over the bottom layer;
forming a top layer of the first type metal over the second type metal;
forming at least one intermediate layer of the first type metal between the bottom layer and the top layer, the at least one intermediate layer configured so as to separate at least two discrete layers of the second type metal, wherein the bottom layer, the at least one intermediate layer, the at least two discrete layers and the top layer define a bottom electrode layer of a transducer cavity; and
forming a bottom cavity layer on the bottom electrode layer by forming a chemical vapor deposition (CVD) SiO 2 layer on the bottom electrode layer and an atomic layer deposition (ALD) Al 2 O 3 layer on the SiO 2 layer.
9. The method of claim 8 , wherein the first type metal comprises titanium nitride (TiN).
10. The method of claim 9 , wherein the second type metal comprises titanium.
11. The method of claim 8 , wherein the bottom layer, the top layer and the at least one intermediate layer have a thickness of about 10 nanometers (nm) to about 30 nm.
12. The method of claim 8 , wherein the at least two discrete layers of the second type metal have a total thickness of about 10 nm to about 300 nm.
13. The method of claim 8 , further comprising forming a membrane support layer formed over the bottom cavity layer, and defining the transducer cavity in the membrane support layer.
14. The method of claim 13 , further comprising bonding a membrane to the membrane support layer to seal the cavity.