Polarization compensation in silicon-dominant electrode cells
Systems and methods are provided for polarization compensation in silicon-dominant electrode cells. One or more adjustments to operation of a silicon-dominant cell maybe applied based on effects of polarization in the silicon-dominant cell during charge/discharge cycles, with the one or more adjustments configured to compensate for at least some of the effects of polarization in the silicon-dominant cell.
1. A method for managing operation of a silicon-dominant cell, the method comprising:
assessing polarization in a silicon-dominant cell during charge/discharge cycles, wherein the polarization is assessed at least in part based on a difference between normal and slow rate discharge; and
applying one or more adjustments to operation of the silicon-dominant cell based on effects of the polarization in the silicon-dominant cell during the charge/discharge cycles, wherein the one or more adjustments are configured to compensate for at least some of the effects of polarization in the silicon-dominant cell.
2. The method of claim 1 , wherein the one or more adjustments to operation of the silicon-dominant cell comprise adjusting cutoff points used during the charge/discharge cycles, and further comprising adjusting one or more cutoff points during at least one charge/discharge cycle.
3. The method of claim 2 , further comprising decreasing voltage cutoff point applicable to discharge of the silicon-dominant cell during the at least one charge/discharge cycle.
4. The method of claim 2 , further comprising increasing voltage cutoff point applicable to charging of the silicon-dominant cell during the at least one charge/discharge cycle.
5. The method of claim 1 , further comprising determining at least one of the one or more adjustments based on a state of health of the silicon-dominant cell.
6. The method of claim 5 , further comprising determining the state of health based on a self-assessment performed when the silicon-dominant cell is not being used.
7. The method of claim 5 , further comprising performing a pulse test on the silicon-dominant cell, and determining the state of health based on the pulse test.
8. The method of claim 1 , further comprising determining when to apply at least one of the one or more adjustments based on polarization capacity fade.
9. The method of claim 8 , further comprising applying the at least one of the one or more adjustments when the polarization capacity fade exceeds a preset threshold.
10. A system comprising:
a silicon-dominant cell; and
one or more circuits for managing operation of the silicon-dominant cell, wherein the one or more circuits are configured to:
assess polarization in a silicon-dominant cell during charge/discharge cycles, wherein the polarization is assessed at least in part based on a difference between normal and slow rate discharge; and
apply one or more adjustments to operation of the silicon-dominant cell based on effects of the polarization in the silicon-dominant cell during the charge/discharge cycles, wherein the one or more adjustments are configured to compensate for at least some of the effects of polarization in the silicon-dominant cell.
11. The system of claim 10 , wherein the one or more adjustments to operation of the silicon-dominant cell comprise adjusting cutoff points used during the charge/discharge cycles, and wherein the one or more circuits are configured to adjust one or more cutoff points during at least one charge/discharge cycle.
12. The system of claim 11 , wherein the one or more circuits are configured to decrease voltage cutoff point applicable to discharge of the silicon-dominant cell during the at least one charge/discharge cycle.
13. The system of claim 11 , wherein the one or more circuits are configured to increase voltage cutoff point applicable to charging of the silicon-dominant cell during the at least one charge/discharge cycle.
14. The system of claim 10 , wherein the one or more circuits are configured to determine at least one of the one or more adjustments based on a state of health of the silicon-dominant cell.
15. The system of claim 14 , wherein the one or more circuits are configured to determine the state of health based on a self-assessment performed when the silicon-dominant cell is not being used.
16. The system of claim 14 , wherein the one or more circuits are configured to perform a pulse test on the silicon-dominant cell, and to determine the state of health based on the pulse test.
17. The system of claim 10 , wherein the one or more circuits are configured to determine when to apply at least one of the one or more adjustments based on polarization capacity fade.
18. The system of claim 17 , wherein the one or more circuits are configured to apply the at least one of the one or more adjustments when the polarization capacity fade exceeds a preset threshold.