Semiconductor device and semiconductor component including the same
A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.
1. A semiconductor device, comprising:
a semiconductor stack comprising an active layer and having a first surface and a second surface;
a first contact structure located on the first surface and comprising
a first semiconductor layer,
a first metal element-containing structure comprising a first metal element, and
a first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure; and
an insulating structure on the first surface and covering a portion of the first semiconductor layer;
wherein the first p-type or n-type layer comprises an oxygen element (O) and a second metal element and has a first thickness less than or equal to 20 nm, and the first semiconductor layer comprises a phosphide compound or an arsenide compound;
wherein the first metal element-containing structure does not physically contact the first semiconductor layer, the first metal element-containing structure electrically connects the first semiconductor layer through the p-type or n-type layer, and
wherein the insulating structure has a second thickness larger than the first thickness.
2. The semiconductor device of claim 1 , wherein the active layer comprises AlGaInAs, InGaAsP, AlGaAsP or AlGaInP.
3. The semiconductor device of claim 1 , wherein the p-type or n-type layer comprises only one kind of metal elements.
4. The semiconductor device of claim 1 , wherein the first semiconductor layer has a first material with a conduction band edge Ec and a valence band edge Ev, and the p-type or n-type layer has a second material with a work function WF 1 , when the first semiconductor layer is of an n-type conductivity, the work function WF 1 fulfills WF 1 <(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF 1 fulfills WF 1 >(Ec+Ev)/2.
5. The semiconductor device of claim 1 , further comprising a second contact structure including a second semiconductor layer, a second metal element-containing structure and a second p-type or n-type layer located between the second semiconductor layer and the second metal element-containing structure.
6. The semiconductor device of claim 1 , further comprising an electrode structure on the second surface, wherein the electrode structure comprises a main electrode and an extension electrode electrically connected to the main electrode.
7. The semiconductor device of claim 6 , wherein the main electrode is not overlapped with the insulating structure in a vertical direction.
8. The semiconductor device of claim 6 , wherein the extension electrode is overlapped with the insulating structure and the first p-type or n-type layer in a vertical direction.
9. The semiconductor device of claim 6 , wherein the first metal element-containing structure is overlapped with the main electrode and not overlapped with the extension electrode in a vertical direction.
10. The semiconductor device of claim 1 , wherein the first semiconductor layer comprises a third metal element which is the same as the second metal element.
11. A semiconductor device, comprising:
a substrate;
a reflective structure on the substrate;
a semiconductor stack on the reflective structure and comprising an active layer; and
a first contact structure located between the reflective structure and the semiconductor stack and comprising
a first semiconductor layer,
a first metal element-containing structure comprising a first metal element, and
a first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure;
wherein the first p-type or n-type layer comprises an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.
12. The semiconductor device of claim 11 , further comprising an insulating structure between the first semiconductor layer and the reflective structure, and the insulating structure covers a portion of the first semiconductor layer.
13. The semiconductor device of claim 11 , wherein the first metal element-containing structure does not physically contact the first semiconductor layer and the first metal element-containing structure electrically connects the first semiconductor layer through the p-type or n-type layer.
14. The semiconductor device of claim 11 , wherein the p-type or n-type layer comprises only one kind of metal elements.
15. The semiconductor device of claim 11 , wherein the active layer comprises AlGaInAs, InGaAsP, AlGaAsP or AlGaInP.
16. The semiconductor device of claim 11 , wherein the first metal element is the same as the second metal element.
17. The semiconductor device of claim 11 , wherein the first semiconductor layer has a first material with a conduction band edge Ec and a valence band edge Ev, and the p-type or n-type layer has a second material with a work function WF 1 , when the first semiconductor layer is of an n-type conductivity, the work function WF 1 fulfills WF 1 <(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF 1 fulfills WF 1 >(Ec+Ev)/2.
18. A semiconductor device, comprising:
a semiconductor stack comprising an active layer and having a first surface; and
a first contact structure located on the first surface and comprising
a first semiconductor layer,
a first metal element-containing structure comprising a first metal element, and
a first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure; and
an insulating structure on the first surface and covers a portion of the first semiconductor layer;
wherein the first semiconductor layer comprises a conductive metal oxide compound including indium tin oxide or indium zinc oxide, the first p-type or n-type layer comprises an oxygen element (O) and a second metal element and has a first thickness less than or equal to 20 nm;
wherein the first metal element-containing structure does not physically contact the first semiconductor layer and the first metal element-containing structure electrically connects the first semiconductor layer through the p-type or n-type layer
wherein the p-type or n-type layer has a material with a first work function WF 1 and the first metal element has a second work function WF 2 , and when the p-type or n-type layer is of an n-type conductivity, the second work function WF 2 is greater than the first work function WF 1 ; when the p-type or n-type layer is of a p-type conductivity, the first work function WF 1 is greater than the second work function WF 2 .
19. The semiconductor device of claim 18 , wherein the insulating structure has a second thickness larger than the first thickness.