IP Library Granted Patent US 11,958,292
Granted Patent B2
US 11,958,292 · App. 17/206,344 · Granted Apr 16, 2024

Solvent compatible nozzle plate

Inventor: Sean T. Weaver (Lexington, KY)
Assignee: Funai Electric Co., Ltd.
B41J2/1433B41J2/1603B41J2/162B41J2/1623B41J2/1626B41J2/1631B41J2/164G03F7/004G03F7/0046G03F7/038G03F7/094G03F7/11G03F7/40B41J2202/03
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Quick Facts
Patent No.
US 11,958,292
App. No.
17/206,344
Granted
Apr 16, 2024
Kind
B2
Abstract

A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.

Claims (16)

1. A composite photoresist nozzle plate comprising a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin wherein the photoresist layer devoid of a phenoxy resin is configured to be adjacent to a flow feature layer of a fluid ejection head.

2. The composite photoresist nozzle plate of claim 1 , wherein the composite photoresist nozzle plate is coated onto a release liner.

3. The composite photoresist nozzle plate of claim 1 , wherein the photoresist layer devoid of a phenoxy resin is also devoid of a hydrophobicity agent.

4. The composite photoresist nozzle plate of claim 1 , wherein the photoresist layer devoid of a phenoxy resin has a thickness ranging from about 3 to about 10 microns.

5. The composite photoresist nozzle plate of claim 1 , wherein the photoresist layer containing a phenoxy resin has a thickness ranging from about 3 to about 20 microns.

6. The composite photoresist nozzle plate of claim 1 , further comprising a third photoresist layer adjacent to the photoresist layer containing the phenoxy resin, wherein the third photoresist layer contains a phenoxy resin and a hydrophobicity agent.

7. The composite photoresist nozzle plate of claim 6 , wherein the third photoresist layer has a thickness ranging from about 3 to about 20 microns.

8. The composite photoresist nozzle plate of claim 6 , wherein the hydrophobicity agent is selected from the group consisting of heptadecafluorodecyltrimethoxysilane, octadecyl-dimethylchlorosilane, octadecyltrichlorosilane, methytrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, t-butylmethoxysilane, tetraethoxysilane, sodium methyl siliconate, vinyltrimethoxysilane N-(3-(trimethoxysilyl)propyl)ethylenediamine, polymethylmethoxy-siloxane, polydimethylsiloxane, polyethylhydrogensiloxane, and dimethyl siloxane.

9. A fluid ejection head comprising a semiconductor substrate, a flow feature layer attached to the semiconductor substrate and the composite photoresist nozzle plate of claim 1 laminated to the flow feature layer.

10. A fluid ejection head comprising:

a semiconductor substrate containing a plurality fluid ejection actuators on a device surface thereof and one or more fluid supply vias etched therethrough;

a flow feature layer applied to the device surface of the semiconductor substrate, wherein the flow feature layer has fluid channels and fluid ejection chambers imaged and developed therein; and

a composite photoresist nozzle plate laminated to the flow feature layer, wherein the composite photoresist nozzle plate comprises a photoresist layer devoid of a phenoxy resin adjacent to the flow feature layer, and a photoresist layer comprising a phenoxy resin adjacent to the photoresist layer devoid of a phenoxy resin.

11. The fluid ejection head of claim 10 , wherein the composite photoresist nozzle plate is devoid of a hydrophobicity agent.

12. The fluid ejection head of claim 10 , wherein the photoresist layer comprising the phenoxy resin comprises a photoresist layer devoid of a hydrophobicity agent adjacent to the photoresist layer devoid of a phenoxy resin and a photoresist layer comprising a hydrophobicity agent.

13. The fluid ejection head of claim 12 , wherein the hydrophobicity agent is selected from the group consisting of heptadecafluorodecyltrimethoxysilane, octadecyl-dimethylchlorosilane, octadecyltrichlorosilane methytrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, t-butylmethoxysilane, tetraethoxysilane, sodium methyl siliconate, vinyltrimethoxysilane, N-(3-(trimethoxysilyl)propyl)ethylenediamine, polymethylmethoxy-siloxane, polydimethylsiloxane, polyethylhydrogensiloxane, and dimethyl siloxane.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2025
From: FUNAI ELECTRIC CO., LTD.
To: BRADY WORLDWIDE, INC.
Reel/Frame 070724/0640 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2023
From: FUNAI ELECTRIC HOLDINGS CO., LTD.
To: FUNAI ELECTRIC CO., LTD.
Reel/Frame 064093/0487 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 063815 FRAME: 0716. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded Jun 2, 2023
From: FUNAI ELECTRIC CO., LTD.
To: FUNAI ELECTRIC HOLDINGS CO., LTD.
Reel/Frame 063843/0907 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2023
From: FUNAI ELECTRIC CO., LTD.
To: FUNAI ELECTRIC HOLDINGS CO., LTD.
Reel/Frame 063815/0716 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2021
From: WEAVER, SEAN T
To: FUNAI ELECTRIC CO., LTD.
Reel/Frame 055646/0867 →
Continuity (1)
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Cited By (1)
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