Display device and manufacturing method thereof including contact holes optimized to prevent excess hydrogen from introducing into semiconductor layer
A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm 2 to about 81 μm 2 .
1. A display device comprising:
a substrate;
a first semiconductor layer disposed on the substrate, wherein the first semiconductor layer includes a channel region and a doped region;
a first gate electrode disposed to overlap the channel region of the first semiconductor layer;
an intermediate film disposed on the first semiconductor layer and the first gate electrode;
a first electrode disposed on the intermediate film; and
an light emitting layer disposed on the first electrode,
wherein an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer,
the doped region of the first semiconductor layer and the first electrode contact each other through the opening of the intermediate film,
an area of a cross-section of the opening of the intermediate film parallel to the substrate is in a range of about 49 μm 2 to about 81 μm 2 , and
the light emitting layer directly contacts the first electrode.
2. The display device of claim 1 , wherein
the first semiconductor layer includes an oxide semiconductor.
3. The display device of claim 1 , wherein
the intermediate film includes a silicon nitride.
4. The display device of claim 1 , further comprising:
an insulating film disposed between the intermediate film and the first electrode,
wherein an entire region of the intermediate film contacts the insulating film, and
the insulating film includes an organic material.
5. The display device of claim 1 , further comprising:
a light blocking layer disposed between the substrate and the first semiconductor layer; and
a buffer layer disposed between the light blocking layer and the first semiconductor layer,
wherein an opening is defined through the buffer layer to overlap the light blocking layer, and
the first electrode and the light blocking layer contact each other through the opening of the buffer layer.
6. The display device of claim 5 , further comprising:
a second semiconductor layer disposed in a same layer as the first semiconductor layer, wherein the second semiconductor layer includes a channel region and a doped region; and
a first connection electrode disposed in a same layer as the first electrode,
wherein the first connection electrode contacts the first gate electrode and the doped region of the second semiconductor layer, and connects the first gate electrode and the second semiconductor layer to each other.
7. The display device of claim 6 , further comprising:
a data line disposed in a same layer as the light blocking layer; and
a second connection electrode disposed in a same layer as the first electrode,
wherein the second connection electrode contacts the data line and the doped region of the second semiconductor layer, and connects the data line and the second semiconductor layer to each other.
8. The display device of claim 1 , wherein
a shape of a cross-section of the opening of the intermediate film parallel to the substrate is one selected from a polygonal shape, a circular shape, an elliptical shape, and a shape including a plurality of sides and curved lines connecting the sides to each other.
9. The display device of claim 1 , wherein
a threshold voltage of the first semiconductor layer is in a range of about −1.0 V to about 1.0 V.
10. A display device comprising:
a substrate;
a first semiconductor layer disposed on the substrate, wherein the first semiconductor layer includes a channel region and a doped region;
a first gate electrode disposed to overlap the channel region of the first semiconductor layer;
an intermediate film disposed on the first semiconductor layer and the first gate electrode;
a first electrode disposed on the intermediate film; and
an light emitting layer disposed on the first electrode,
wherein an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer,
the doped region of the first semiconductor layer and the first electrode contact each other through the opening of the intermediate film,
the first semiconductor layer includes an oxide semiconductor,
the intermediate film includes a silicon nitride,
a width of the opening of the intermediate film is in a range of about 7 μm to about 9 μm, and
the light emitting layer directly contacts the first electrode.
11. The display device of claim 10 , wherein
a shape of a cross-section of the opening of the intermediate film parallel to the substrate is one selected from a polygonal shape, a circular shape, an elliptical shape, and a shape including a plurality of sides and curved lines connecting the sides to each other,
the width of the opening is a length of a longest side when the cross-section of the opening is a polygon or the shape including the plurality of sides and the curved lines connecting the sides to each other,
the width of the opening is a length of a diameter when the cross-section of the opening is circular, and
the width of the opening is a length of a long axis when the cross-section of the opening is elliptical.
12. The display device of claim 10 , further comprising:
a second semiconductor layer disposed in a same layer as the first semiconductor layer, wherein the second semiconductor layer includes a channel region and a doped region; and
a first connection electrode disposed in a same layer as the first electrode,
wherein the first connection electrode contacts the first gate electrode and the doped region of the second semiconductor layer, and connects the first gate electrode and the second semiconductor layer to each other.
13. The display device of claim 12 , further comprising:
a data line disposed between the substrate and the second semiconductor layer;
a buffer layer disposed between the data line and the second semiconductor layer; and
a second connection electrode disposed in a same layer as the first electrode,
wherein the second connection electrode contacts the data line and the doped region of the second semiconductor layer, and connects the data line and the second semiconductor layer to each other.
14. The display device of claim 10 , wherein
a threshold voltage of the first semiconductor layer is in a range of about −1.0 V to about 1.0 V.