Dual color detection systems and methods

1. An imaging device comprising:

a first pixel configured to detect first image data associated with a first waveband of electromagnetic radiation;

a second pixel configured to detect second image data associated with a second waveband of the electromagnetic radiation, wherein at least a portion of the second waveband does not overlap the first waveband, wherein the second pixel comprises a first portion of a first layer, a second layer disposed on the first portion, and a third layer disposed on the second layer, wherein the first and third layers have a first conductivity type, and wherein the second layer has a second conductivity type different from the first conductivity type; and

a bias circuit configured to:

apply a first voltage between the first pixel and a first ground contact disposed on and in contact with the first layer; and

apply a second voltage between the second pixel and a second ground contact disposed on and in contact with the second layer, wherein the first voltage is different from the second voltage.

2. The imaging device of claim 1 , further comprising a readout circuit configured to obtain, as part of a single frame, a first signal indicative of the first image data from the first pixel and a second signal indicative of the second image data from the second pixel.

3. The imaging device of claim 1 , wherein the bias circuit is configured to:

apply the first voltage such that a first detector contact of the first pixel is at a lower potential than the first ground contact; and

apply the second voltage such that a second detector contact of the second pixel is at a higher potential than the second ground contact.

4. The imaging device of claim 3 , further comprising:

a third pixel configured to detect third image data associated the first waveband; and

a fourth pixel configured to detect fourth image data associated with the second waveband,

wherein the bias circuit is further configured to:

apply a third voltage between the third pixel and the first ground contact such that a third detector contact of the third pixel is at a lower potential than the first ground contact; and

apply a fourth voltage between the fourth pixel and the second ground contact such that a fourth detector contact of the fourth pixel is at a higher potential than the second ground contact.

5. The imaging device of claim 3 , wherein the first pixel and the second pixel are part of a focal plane array (FPA), and wherein the first ground contact and the second ground contact are along a periphery of the FPA.

6. The imaging device of claim 1 , wherein the first pixel comprises a first back-to-back diode, wherein the second pixel comprises a second back-to-back diode, and wherein the second back-to-back diode comprises the first portion of the first layer, the second layer, and the third layer.

7. The imaging device of claim 6 , wherein:

the first back-to-back diode comprises:

a second portion of the first layer;

a fourth layer disposed on the second portion of the first layer, wherein the fourth layer has the second conductivity type; and

a fifth layer disposed on the fourth layer, wherein the fifth layer has the first conductivity type.

8. The imaging device of claim 7 , wherein the second layer and the fourth layer are portions of a first continuous layer having the second conductivity type, or wherein the third layer and the fifth layer are disjoint.

9. The imaging device of claim 7 , wherein:

one or more of the first layer, the second layer, the third layer, the fourth layer, or the fifth layer comprises a bulk material structure, a superlattice structure, a quantum well infrared photodetector structure, or a mercury cadmium telluride structure;

the first conductivity type is an n-type conductivity; and

the second conductivity type is a p-type conductivity.

10. The imaging device of claim 7 , wherein:

the first pixel further comprises:

a first barrier layer disposed between and in contact with the second portion and the fourth layer; and/or

a second barrier layer disposed between and in contact with the fourth layer and the fifth layer; and

the second pixel further comprises:

a third barrier layer disposed between and in contact with the first portion and the second layer; and/or

a fourth barrier layer disposed between and in contact with the second layer and the third layer.

11. The imaging device of claim 10 , wherein the first pixel comprises the second barrier layer, wherein the imaging device further comprises a third pixel configured to detect third image data associated with the first waveband of electromagnetic radiation, wherein the third pixel comprises:

a third portion of the first layer;

a fifth barrier layer disposed on the third portion of the first layer;

a sixth layer disposed on the fifth barrier layer;

a sixth barrier layer disposed on the sixth layer; and

a seventh layer disposed on the sixth barrier layer,

wherein:

the second layer, the fourth layer, and the sixth layer are portions of a first continuous layer, and

the second barrier layer and the sixth barrier layer are portions of a second continuous layer.

12. A method for fabricating an imaging device, the method comprising:

forming a first layer having a first conductivity type;

forming a second layer on the first layer, wherein the second layer has a second conductivity type different from the first conductivity type;

forming a third layer on the second layer, wherein the third layer has the first conductivity type;

forming a first set of pixels of the imaging device, wherein each pixel of the first set of pixels is formed by removing a respective portion of each of the first layer, the second layer, and the third layer, wherein the first set of pixels is associated with detection of a first waveband of electromagnetic radiation;

forming a second set of pixels of the imaging device, wherein each pixel of the second set of pixels is formed by removing a respective portion of the first layer, wherein the second set of pixels is associated with detection of a second waveband of the electromagnetic radiation, and wherein at least a portion of the second waveband does not overlap the first waveband;

forming a first ground contact on the first layer; and

forming a second ground contact on the second layer.

13. The method of claim 12 , further comprising coupling the first set of pixels and the second set of pixels to a readout circuit, and wherein

the forming the first set of pixels comprises etching the first layer, the second layer, and third layer to remove the respective portion of each of the first layer, the second layer, and the third layer; and

each pixel of the second set of pixels is formed by removing the respective portion of the first layer and a respective portion of the second layer.

14. The method of claim 12 , further comprising:

forming a first barrier layer on the first layer, wherein the first barrier layer is between and in contact with the first layer and the second layer; and

forming a second barrier layer on the second layer, wherein the second barrier layer is between and in contact with the second layer and the third layer,

wherein each pixel of the first set of pixels is formed by removing a respective portion of each of the first layer, the second layer, the third layer, the first barrier layer, and the second barrier layer.

15. The method of claim 12 , wherein the first set of pixels and the second set of pixels form a focal plane array (FPA), wherein the method further comprises:

forming a detector contact for each pixel of the first set of pixels and each pixel of the second set of pixels,

wherein the first ground contact and the second ground contact are formed along a periphery of the FPA.

16. A method for operating an imaging device, the method comprising:

applying, by a bias circuit of the imaging device, a first voltage between a first pixel of the imaging device and a first ground contact;

applying, by the bias circuit, a second voltage between a second pixel of the imaging device and a second ground contact, wherein the second pixel comprises a first portion of a first layer, a second layer disposed on the first portion, and a third layer disposed on the second layer, wherein the first and third layers have a first conductivity type, wherein the second layer has a second conductivity type different from the first conductivity type, wherein the first ground contact is disposed on and in contact with the first layer, and wherein the second ground contact is disposed on and in contact with the second layer;

detecting, by the first pixel, first image data associated with a first waveband of electromagnetic radiation; and

detecting, by the second pixel, second image data associated with a second waveband of the electromagnetic radiation, wherein at least a portion of the second waveband does not overlap the first waveband.

17. The method of claim 16 , further comprising:

generating, by the first pixel, a first signal indicative of the first image data;

generating, by the second pixel, a second signal indicative of the second image data; and

receiving, by a readout circuit of the imaging device, the first signal and the second signal as part of a single frame.

18. The method of claim 16 , wherein:

the applying the first voltage comprises applying the first voltage such that a first detector contact of the first pixel is at a lower potential than the first ground contact; and

the applying the second voltage comprises applying the second voltage such that a second detector contact of the second pixel is at higher potential than the second ground contact; and

the method further comprises:

applying, by the bias circuit, a third voltage between a third pixel of the imaging device and the first ground contact such that the third pixel is at a lower potential than the first ground contact;

applying, by the bias circuit, a fourth voltage between a fourth pixel of the imaging device and the second ground contact such that the fourth pixel is at a higher potential than the second ground contact;

detecting, by the third pixel, third image data associated with the first waveband; and

detecting, by the fourth pixel, fourth image data associated with the second waveband.

19. The method of claim 16 , wherein:

the first pixel comprises:

a second portion of the first layer;

a fourth layer disposed on the second portion of the first layer, wherein the fourth layer has the second conductivity type; and

a fifth layer disposed on the fourth layer, wherein the fifth layer has the first conductivity type; and

the third layer and the fifth layer are disjoint.

20. The method of claim 19 , wherein:

the first pixel further comprises:

a first barrier layer disposed between and in contact with the second portion and the fourth layer; and/or

a second barrier layer disposed between and in contact with the fourth layer and the fifth layer; and

the second pixel further comprises:

a third barrier layer disposed between and in contact with the first portion and the second layer; and

a fourth barrier layer disposed between and in contact with the second layer and the third layer; and/or

the second layer and the fourth layer are portions of a continuous layer having the second conductivity type.