Memory device for performing multi program operation and operating method thereof
A memory device includes: a plurality of memory cells grouped into a plurality of planes; page buffer groups corresponding to respective ones of the plurality of planes, the page buffer groups including a plurality of page buffer circuits, each of the plurality of page buffer circuits including cache latches which are configured to receive data to be stored in memory cells in the plurality of planes; and control logic for controlling the page buffer groups to simultaneously initialize cache latches corresponding to at least two planes, among the cache latches, in response to a multi-plane program command, wherein the multi-plane program command instructs a multi-plane program operation of simultaneously storing data in plural planes among the plurality of planes.
1. A memory device comprising:
a plurality of memory cells grouped into a plurality of planes;
page buffer groups corresponding to respective ones of the plurality of planes, the page buffer groups including a plurality of page buffer circuits, each of the plurality of page buffer circuits including cache latches which are configured to receive data to be stored in memory cells in the plurality of planes; and
control logic configured to control the page buffer groups to simultaneously initialize at least two cache latches corresponding to at least two planes, among the cache latches, in response to a multi-plane program command, wherein the multi-plane program command instructs a multi-plane program operation of simultaneously storing data in plural planes among the plurality of planes.
2. The memory device of claim 1 , wherein
the data includes a plurality of logical data corresponding to a plurality of logical pages, and
the multi-plane program command includes a plurality of sub-commands corresponding to respective ones of the plurality of logical data.
3. The memory device of claim 2 , wherein the plurality of sub-commands include logical page information representing which logical page among the plurality of logical pages the data corresponds to.
4. The memory device of claim 2 , wherein the plurality of logical pages include a Most Significant Bit (MSB) page, a Center Significant Bit (CSB) page, and a Least Significant Bit (LSB) page.
5. The memory device of claim 1 , wherein
the plurality of planes include first to fourth planes, and
the page buffer groups are configured to sequentially receive the data from an external controller in a sequence of the first to fourth planes.
6. The memory device of claim 1 , wherein the multi-plane program command includes address information representing which plane among the plurality of planes the data is data to be stored in.
7. The memory device of claim 2 , wherein the control logic includes a latch initialization controller configured to control the page buffer groups to perform an initialization operation of simultaneously initialize the at least two cache latches in response to the multi-plane program command.
8. The memory device of claim 7 , wherein the latch initialization controller includes a page buffer controller configured to control the page buffer groups to move data stored in one latch to another latch in response to input of one sub-command among the plurality of sub-commands.
9. The memory device of claim 8 , wherein the page buffer controller is configured to control the page buffer groups to move data stored in at least one cache latch among the cache latches to another latch connected to the at least one cache latch through a same bit line.
10. The memory device of claim 7 , wherein the latch initialization controller includes a target latch determiner configured to determine at least two target latches on which the initialization operation is to be performed among the cache latches, based on the plurality of sub-commands.
11. The memory device of claim 2 , wherein the control logic is configured to control the page buffer groups to initialize the at least two cache latches during a period corresponding to a sub-command input for a first time among the plurality of sub-commands.
12. The memory device of claim 11 , wherein the control logic is configured to control the page buffer groups to initialize all the cache latches during the period corresponding to the sub-command input for the first time.
13. The memory device of claim 2 , wherein the control logic is configured to control the page buffer groups to initialize the at least two cache latches for every period corresponding to sub-commands each input for a first time for the respective logical pages.
14. A method for operating a memory device including a plurality of planes, the method comprising:
receiving, from an external controller, a multi-plane program command instructing a multi-plane program operation and including a plurality of sub-commands, wherein the multi-plane program operation includes simultaneously performing program operations corresponding to respective ones of the plurality of planes; and
simultaneously initializing, based on the plurality of sub-commands, a plurality of cache latches corresponding to the plurality of planes, wherein the plurality of cache latches are configured to receive data to be stored in each of the plurality of planes.
15. The method of claim 14 , wherein the initializing of the plurality of cache latches includes:
determining at least two target latches on which initialization is to be performed among the plurality of cache latches, based on the plurality of sub-commands; and
simultaneously initializing the at least two target latches.
16. The method of claim 15 , wherein the simultaneously initializing of the at least two target latches include initializing the at least two target latches during a period corresponding to a sub-command input for a first time.
17. The method of claim 16 , wherein the determining of the at least two target latches include determining all of the plurality of cache latches as the target latches.
18. The method of claim 15 , wherein:
the data includes a plurality of logical data corresponding to a plurality of logical pages;
the multi-plane program command includes a plurality of sub-commands corresponding to respective ones of the plurality of logical data; and
the plurality of sub-commands include logical page information representing which logical page among the plurality of logical pages the data corresponds to.
19. The method of claim 15 , wherein the simultaneously initializing of the at least two target latches includes initializing the at least two target latches for every period corresponding to sub-commands each input for a first time for the respective logical pages.
20. A memory device comprising:
a plurality of planes including memory cells;
page buffer groups corresponding to respective ones of the plurality of planes, each of the page buffer groups being configured to receive data to be stored in the memory cells; and
control logic configured to receive a multi-plane program command for simultaneously performing program operations on the plurality of planes, and control the page buffer groups to simultaneously initialize all latches included in the page buffer groups while receiving data to be stored in one plane among the plurality of planes.