Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO)
A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10-5 torr. A bottom portion of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.
1. A method comprising:
forming a spin torque oscillator (STO) having a first width, wherein the STO includes:
a magnetic reference layer;
a non-magnetic spacer layer over the magnetic reference layer;
a perpendicular magnetic anisotropy (PMA) layer over the non-magnetic spacer layer; and
a soft magnetic layer over the PMA layer;
forming a non-magnetic conductive layer having a second width over the STO, the second width being greater than the first width; and
forming a magneto resistive sensor having a third width over the non-magnetic conductive layer, the third width being less than the second width;
wherein the forming the magneto resistive sensor includes forming a tunnel barrier layer, the forming the tunnel barrier layer including:
performing a first oxidation process to oxidize an upper portion of a first magnesium layer disposed over the non-magnetic conductive layer;
performing a second oxidation process to fully oxidize a second magnesium layer disposed over the oxidized upper portion of the first magnesium layer; and
after performing a first annealing process during deposition of a third magnesium layer over the oxidized second magnesium layer, performing a second annealing process, wherein after the performing the second annealing process, each of the first, second, and third magnesium layers are fully oxidized to form an oxidized magnesium layer that interposes and contacts each of a magnetic sensing layer and a reference layer.
2. The method of claim 1 , wherein the first width is equal to the third width.
3. The method of claim 1 , wherein the forming the magneto resistive sensor further includes:
forming the magnetic sensing layer;
forming the tunnel barrier layer over the magnetic sensing layer; and
forming the reference layer over the tunnel barrier layer.
4. The method of claim 3 , wherein the forming the tunnel barrier layer further includes:
prior to performing the first oxidation process, forming the first magnesium layer over the magnetic sensing layer; and
prior to performing the second oxidation process, forming the second magnesium layer over the oxidized upper portion of the first magnesium layer.
5. The method of claim 3 , wherein the forming the magnetic sensing layer further includes forming the magnetic sensing layer as a composite layer.
6. The method of claim 3 , wherein the forming of the reference layer includes preserving perpendicular magnetic anisotropy in the reference layer.
7. The method of claim 1 , wherein the magnetic reference layer includes a laminated stack of alternating first and second material layers.
8. The method of claim 1 , wherein the first oxidation process is performed at a first oxygen pressure, and wherein the second oxidation process is performed at a second oxygen pressure greater than the first oxygen pressure.
9. The method of claim 8 , wherein the second oxygen pressure is greater than the first oxygen pressure by a factor of at least 100.
10. A method comprising:
forming a spin torque oscillator (STO) having a first width, wherein the forming of the STO includes:
forming a magnetic reference layer;
forming a non-magnetic spacer layer over the magnetic reference layer;
forming a perpendicular magnetic anisotropy (PMA) layer over the non-magnetic spacer layer; and
forming a soft magnetic layer over the PMA layer, wherein the PMA layer and the soft magnetic layer together form a composite magnetic oscillation layer;
forming a non-magnetic conductive layer having a second width over the STO; and
forming a magneto resistive sensor having a third width over the non-magnetic conductive layer, the third and first widths being less than the second width, wherein the forming of the magneto resistive sensor includes:
forming a magnetic sensing layer;
forming a tunnel barrier layer over the magnetic sensing layer; and
forming a reference layer over the tunnel barrier layer;
wherein forming the tunnel barrier layer includes:
forming a first magnesium layer over the magnetic sensing layer;
performing a first oxidation process to oxidize an upper portion of the first magnesium layer;
forming a second magnesium layer over the oxidized upper portion of the first magnesium layer;
performing a second oxidation process to fully oxidize the second magnesium layer;
performing a first annealing process during deposition of a third magnesium layer over the fully oxidized second magnesium layer; and
after performing the first annealing process during deposition of the third magnesium layer, performing a second annealing process.
11. The method of claim 10 , wherein the forming of the reference layer includes preserving perpendicular magnetic anisotropy in the reference layer, and wherein the forming the magneto resistive sensor further includes:
forming an exchange coupling layer over the reference layer;
forming a pinned layer over the exchange coupling layer; and
forming an antiferromagnetic layer over the pinned layer.
12. The method of claim 10 , wherein the forming the magnetic sensing layer further includes forming the magnetic sensing layer as a composite layer.
13. The method of claim 10 , wherein the PMA layer has a first oscillation frequency and a first in-plane magnetization component, wherein the soft magnetic layer has a second oscillation frequency and a second in-plane magnetization component, wherein the first oscillation frequency is the same as the second oscillation frequency, and wherein the first in-plane magnetization component is smaller than the second in-plane magnetization component.
14. The method of claim 10 , wherein the first width is equal to the third width, wherein the STO has a first sidewall, wherein the magneto resistive sensor has a second sidewall, and wherein the forming the magneto resistive sensor includes forming the second sidewall aligned vertically above the first sidewall.
15. The method of claim 10 , wherein the forming the magnetic reference layer further includes forming a laminated stack of alternating first and second material layers.
16. The method of claim 10 , wherein the performing one or both of the first and second annealing processes provides a magnesium oxide layer interposing the magnetic sensing layer and the reference layer, wherein a bottom surface of the magnesium oxide layer contacts the magnetic sensing layer, and wherein a top surface of the magnesium oxide layer contacts the reference layer.
17. The method of claim 10 , wherein each layer of the STO has the first width and each layer of the magneto resistive sensor has the third width.
18. The method of claim 10 , wherein the first oxidation process is performed at a first oxygen pressure, and wherein the second oxidation process is performed at a second oxygen pressure greater than the first oxygen pressure.
19. The method of claim 18 , wherein the second oxygen pressure is greater than the first oxygen pressure by a factor of at least 100.
20. The method of claim 19 , wherein the first oxygen pressure is equal to 10 −5 torr or less.