Systems and methods for irradiation
Technology is described to uniformly apply doses of radiation to a target material. An irradiation device may comprise an enclosure configured to receive a target material and a source configured to emit primary radiation within the enclosure. The primary radiation may be configured to irradiate at least a first portion of the target material. The irradiation device may further comprise a scattering medium disposed within the enclosure. The scattering medium may be configured to produce secondary radiation through scatter interactions in response to the primary radiation, the secondary radiation configured to irradiate at least a second portion of the target material. A thickness of the scattering medium relative to the primary radiation may have a thickness of at least 3 millimeters).
1. An irradiation device, comprising:
an enclosure configured to receive a target material;
a source configured to emit primary radiation within the enclosure, the primary radiation comprises x-ray radiation configured to irradiate at least a first portion of the target material; and
a scattering medium disposed within the enclosure, the scattering medium configured to produce secondary radiation through scatter interactions in response to the primary radiation, the secondary radiation configured to irradiate at least a second portion of the target material, wherein the scattering medium has a thickness of at least 3 millimeters (mm).
2. The irradiation device of claim 1 , wherein the thickness of the scattering medium is at least 6 millimeters.
3. The irradiation device of claim 1 , wherein the source is configured to emit the primary radiation at a specified energy level, and wherein the scattering medium is configured to comprise a material having an atomic number at which Compton scattering (σ) is dominant over photoelectric absorption (τ) and pair production (k) at the specified energy level.
4. The irradiation device of claim 1 , wherein the scattering medium comprises a material having an atomic number less than or equal to 20.
5. The irradiation device of claim 1 , wherein the scattering medium comprises a material having an atomic number less than or equal to 13.
6. The irradiation device of claim 1 , wherein the scattering medium comprises one or more of aluminum and an aluminum alloy.
7. The irradiation device of claim 1 , wherein the scattering medium comprises one or more of a carbon-based material, polymer, organic polymer, plastic, plastic polymer, synthetic polymer, thermoplastic, thermoplastic polymer, nylon, polyvinyl chloride, polystyrene, polyoxymethylene, acetal, acetal resin, an acetal plastic, polyacetal, polyformaldehyde, and high-density polyethylene.
8. The irradiation device of claim 1 , wherein the thickness of the scattering medium is set at a point at which a scatter cross section of the scattering medium exceeds an absorption cross section of the scattering medium by at least a threshold.
9. The irradiation device of claim 1 , wherein the primary radiation comprises x-ray radiation between 40 kiloelectron volts and 600 kiloelectron volts.
10. The irradiation device of claim 1 , wherein a surface of the scattering medium is substantially normal to the primary radiation along the surface.
11. The irradiation device of claim 1 , further comprising a receptacle configured to hold at least a portion of the target material within the enclosure, wherein the scattering medium is disposed between a surface of the receptacle and the target material, and wherein a thickness of the scattering medium is greater than a thickness of the receptacle.
12. The irradiation device of claim 1 , further comprising a receptacle configured to hold at least a portion of the target material within the enclosure, wherein the scattering medium forms at least a portion of the receptacle.
13. The irradiation device of claim 1 , further comprising a receptacle configured to hold at least a portion of the target material, wherein the scattering medium is configured to form at least a portion of one or more of a base of the receptacle, a sidewall of the receptacle, and a cylindrical wall of the receptacle.
14. The irradiation device of claim 1 , wherein the source is configured to emit the primary radiation into an irradiation zone, and wherein the irradiation device further comprises a conveyor configured to transfer the target material through the irradiation zone.
15. The irradiation device of claim 1 , wherein the target material comprises a biological substance.
16. The irradiation device of claim 1 , further comprising:
a receptacle disposed within and separate from the enclosure, configured to receive the target material, and comprising the scattering medium, wherein the receptacle is configured such that at least part of the primary radiation passes through the target material before scattering from the scattering medium.
17. An irradiation method, comprising:
providing an enclosure configured to enclose a target material within an interior volume of an irradiation device;
producing a scattering medium configured to emit secondary radiation into the interior volume of the irradiation device in response to primary radiation generated by an x-ray source of the irradiation device, the secondary radiation produced through scatter interactions within the scattering medium; and
configuring a thickness of the scattering medium relative to the primary radiation to be 3 millimeters or greater.
18. The irradiation method of claim 17 , further comprising configuring a depth axis of the scattering medium to align with a propagation direction of the primary radiation.
19. The irradiation method of claim 17 , wherein the scattering medium is configured to reduce a radiation dosage differential between a maximum-exposure region of the target material and a minimum-exposure region of the target material to less than about 10%.
20. The irradiation method of claim 17 , further comprising determining the thickness for the scattering medium relative to the primary radiation based on a scattering cross section of the scattering medium and an absorption cross section of the scattering medium, wherein the determined thickness is at least 6 millimeters.
21. An irradiation system, comprising:
means for receiving a target material to be irradiated within an interior volume of an enclosure;
means for emitting primary radiation into the enclosure, the primary radiation comprises x-ray radiation configured to irradiate at least a first portion of the target material; and
means for producing secondary radiation through scatter interactions within a scattering medium, the secondary radiation configured to irradiate at least a second portion of the target material.
22. The irradiation system of claim 21 , further comprising receptacle means configured to hold the target material within the interior volume, wherein at least a portion of the scattering medium is disposed on the receptacle means.
23. The irradiation system of claim 21 , further comprising receptacle means configured to hold at least a portion of the target material within the interior volume, wherein at least a portion of the receptacle means are formed from the scattering medium.
24. The irradiation system of claim 21 , wherein a thickness of the scattering medium relative to a propagation direction of the primary radiation is at least 6 millimeters.
25. The irradiation system of claim 21 , wherein the scattering medium comprises a material having an atomic number selected from a determined range of atomic numbers, the range comprising atomic numbers for which Compton scattering exceeds photoelectric absorption at an energy of the primary radiation.
26. An irradiation device, comprising:
an enclosure configured to receive a target material;
a source configured to emit primary radiation within the enclosure, the primary radiation configured to irradiate at least a first portion of the target material; and
a scattering medium disposed within the enclosure, the scattering medium configured to produce secondary radiation through scatter interactions in response to the primary radiation, the secondary radiation configured to irradiate at least a second portion of the target material, wherein the scattering medium has a thickness of at least 3 millimeters (mm);
wherein the source is configured to emit the primary radiation at a specified energy level, and wherein the scattering medium is configured to comprise a material having an atomic number at which Compton scattering (σ) is dominant over photoelectric absorption (τ) and pair production (k) at the specified energy level.